Abstract: A semiconductor structure includes a substrate and a target pattern. The target pattern is disposed on the substrate. The top-view pattern of the target pattern includes a main portion and a protruding portion. The main portion and the protruding portion are connected with each other along the long axis of the top-view pattern of the target pattern. The protruding portion is connected to the main portion. The protruding portion includes a first portion located on one side of the long axis. The maximum width of the first portion perpendicular to the long axis is less than half of the maximum width of the main portion.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A substrate is provided. A material layer is formed on the substrate. A first hard mask pattern is formed on the material layer. The top-view pattern of the first hard mask pattern is ring-shaped. The first hard mask pattern has an opening. A second hard mask pattern is formed on the first hard mask pattern. The second hard mask pattern fills the opening. The top-view pattern of the second hard mask pattern is completely located inside the outer contour of the top-view pattern of the first hard mask pattern. The pattern of the first hard mask pattern and the pattern of the second hard mask pattern are transferred to the material layer to form a first target pattern.

Abstract: A method of manufacturing a memory device includes providing a substrate and sequentially forming a stack layer and a hard mask layer on the substrate. The method includes forming a first patterned mandrel and a plurality of second patterned mandrels on the hard mask layer, wherein the first patterned mandrel is adjacent to and spaced apart from an end of the second patterned mandrels in the first direction. The method further includes using the first patterned mandrel and the second patterned mandrels as masks, patterning the hard mask layer and the stack layer sequentially to form a dummy structure and a plurality of word lines separated from each other on the substrate. A portion of the stack layer corresponding to the first mandrel is formed into the dummy structure, and a portion of the stack layer corresponding to the second patterned mandrels is formed into the word lines.

Abstract: A pick-up structure for a memory device and method for manufacturing memory device are provided. The pick-up structure includes a substrate and a plurality of pick-up electrode strips. The substrate has a memory cell region and a peripheral pick-up region adjacent thereto. The pick-up electrode strips are parallel to a first direction and arranged on the substrate in a second direction. The second direction is different from the first direction. Each pick-up electrode strip includes a main part in the peripheral pick-up region and an extension part extending from the main part to the memory cell region. The main part is defined by fork-shaped patterns of a first mask layer. The extension part has a width less than that of the main part, and the extension part has a side wall surface aligned with a side wall surface of the main part.

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer and a photoresist on a substrate having a layer to be etched, and performing exposure and development such that the patterned photoresist has first trenches and to expose the hard mask layer, wherein ends of the first trenches have a width gradually decreased toward an end point. The exposed hard mask layer is removed using the patterned photoresist to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has second trenches, and the ends of the second trenches have a width gradually decreased toward an end point. Spacers are formed on inner walls of the second trenches. The hard mask layer is removed such that the layer to be etched is exposed. The exposed layer to be etched is removed using the spacers as an etch mask.

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer and a photoresist on a substrate having a layer to be etched, and performing exposure and development such that the patterned photoresist has first trenches and to expose the hard mask layer, wherein ends of the first trenches have a width gradually decreased toward an end point. The exposed hard mask layer is removed using the patterned photoresist to transfer the pattern of the first trenches to the hard mask layer such that the patterned hard mask layer has second trenches, and the ends of the second trenches have a width gradually decreased toward an end point. Spacers are formed on inner walls of the second trenches. The hard mask layer is removed such that the layer to be etched is exposed. The exposed layer to be etched is removed using the spacers as an etch mask.

Abstract: A method of forming semiconductor devices includes providing a substrate with a patterned material layer formed thereon, forming a material layer on the patterned material layer, wherein the material layer has a first region with a lower top surface and a second region with a higher top surface, forming a flowable material layer on the material layer, wherein the flowable material layer exposes at least a portion of the second region of the material layer, removing the exposed portion of the second region of the material layer with the flowable material layer as a stop layer, removing the flowable material layer, and planarizing the material layer.

Abstract: A method of forming semiconductor devices includes providing a substrate with a patterned material layer formed thereon, forming a material layer on the patterned material layer, wherein the material layer has a first region with a lower top surface and a second region with a higher top surface, forming a flowable material layer on the material layer, wherein the flowable material layer exposes at least a portion of the second region of the material layer, removing the exposed portion of the second region of the material layer with the flowable material layer as a stop layer, removing the flowable material layer, and planarizing the material layer.

Abstract: A reversible ratchet wrench includes a direction-selecting rotary knob disposed rotatably on a driving head and rotatable relative to the driving head between a clockwise position and a counterclockwise position such that, at the clockwise position, a pawl unit is connected between the driving head and a ratchet head so as to allow for clockwise co-rotation of the driving head and the ratchet head, while preventing counterclockwise co-rotation of the driving head and the ratchet head, and at the counterclockwise position, the pawl unit is connected between the driving head and the ratchet head so as to allow for counterclockwise co-rotation of the driving head and the ratchet head, while preventing clockwise co-rotation of the driving head and the ratchet head.

Abstract: A reversible ratchet wrench includes a direction-selecting rotary knob disposed rotatably on a driving head and rotatable relative to the driving head between a clockwise position and a counterclockwise position such that, at the clockwise position, a pawl unit is connected between the driving head and a ratchet head so as to allow for clockwise co-rotation of the driving head and the ratchet head, while preventing counterclockwise co-rotation of the driving head and the ratchet head, and at the counterclockwise position, the pawl unit is connected between the driving head and the ratchet head so as to allow for counterclockwise co-rotation of the driving head and the ratchet head, while preventing clockwise co-rotation of the driving head and the ratchet head.