Abstract: A semiconductor device includes a stacked gate structure, a plurality of stacks and a first conductive layer. The stacks are disposed aside the stacked gate structure and arranged along both a first direction and a second direction perpendicular to the first direction, wherein the stacks are extended continuously along the first direction and segmented in the second direction. The first conductive layer is disposed between segmented portions of the stacks along the second direction, wherein top surfaces of the segmented portions of the stacks are higher than a top surface of the first conductive layer.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Abstract: An arithmetic processing system processes a sensing signal and a first approximate offset signal to obtain a second approximate offset signal. The system includes a first arithmetic processor and a second arithmetic processor. The first arithmetic processor receives and processes the sensing signal and the first approximate offset signal to output a first arithmetic signal. The second arithmetic processor processes the first arithmetic signal to output a second arithmetic signal, and the second arithmetic signal is added with a predetermined offset signal to obtain the second approximate offset signal, and the second approximate offset signal is closer to a real offset signal of the sensing signal than the first approximate offset signal. A method of arithmetic processing is also disclosed.

Abstract: Image capture systems capable of ensuring clear images are provided, in which an image capture module senses at least one image, and an operational module performs a compensation to the image capture system according to a modulation transfer function (MTF) value corresponding to the image, such that the image capture system can be operated under an optimized total gain thereby ensuring clear images.

Abstract: A method of offset compensation for solid-state imaging devices is provided. In the method a first and second detection signal are obtained. The two signals are compared to obtain a difference value. A variable voltage is output according to the difference value to drive a magnetic element. The solid-state imaging device is moved by the magnetic element to compensate the offset of the solid-state imaging device. A system of offset compensation of the solid-state imaging device is also disclosed.

Abstract: An image capture method for capturing an image with a single lens is provided. The method includes: (a) sequentially moving an image capture unit to predetermined positions; (b) sequentially capturing a plurality of frames of images by the image capture unit at the predetermined positions, wherein at least one image distance difference exists among the images; and (c) generating at least one image file by a processing unit according to the images.

Abstract: Image capture systems capable of ensuring clear images are provided, in which an image capture module senses at least one image, and an operational module performs a compensation to the image capture system according to a modulation transfer function (MTF) value corresponding to the image, such that the image capture system can be operated under an optimized total gain thereby ensuring clear images.

Abstract: An arithmetic processing system processes a sensing signal and a first approximate offset signal to obtain a second approximate offset signal. The system includes a first arithmetic processor and a second arithmetic processor. The first arithmetic processor receives and processes the sensing signal and the first approximate offset signal to output a first arithmetic signal. The second arithmetic processor processes the first arithmetic signal to output a second arithmetic signal, and the second arithmetic signal is added with a predetermined offset signal to obtain the second approximate offset signal, and the second approximate offset signal is closer to a real offset signal of the sensing signal than the first approximate offset signal. A method of arithmetic processing is also disclosed.

Abstract: A method of offset compensation for solid-state imaging devices is provided. In the method a first and second detection signal are obtained. The two signals are compared to obtain a difference value. A variable voltage is output according to the difference value to drive a magnetic element. The solid-state imaging device is moved by the magnetic element to compensate the offset of the solid-state imaging device. A system of offset compensation of the solid-state imaging device is also disclosed.