Patents by Inventor Kun-Chuan Lin
Kun-Chuan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240114614Abstract: Disclosed is a thermal conduction-electrical conduction isolated circuit board with a ceramic substrate and a power transistor embedded, mainly comprising: a dielectric material layer, a heat-dissipating ceramic block, a securing portion, a stepped metal electrode layer, a power transistor, and a dielectric material packaging, wherein a via hole is formed in the dielectric material layer, the heat-dissipating ceramic block is correspondingly embedded in the via hole, the heat-dissipating ceramic block has a thermal conductivity higher than that of the dielectric material layer and a thickness less than that of the dielectric material layer, the stepped metal electrode layer conducts electricity and heat for the power transistor, the dielectric material packaging is configured to partially expose the source connecting pin, drain connecting pin, and gate connecting pin of the encapsulated stepped metal electrode layer.Type: ApplicationFiled: September 29, 2022Publication date: April 4, 2024Inventors: HO-CHIEH YU, CHEN-CHENG-LUNG LIAO, CHUN-YU LIN, JASON AN CHENG HUANG, CHIH-CHUAN LIANG, KUN-TZU CHEN, NAI-HIS HU, LIANG-YO CHEN
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Patent number: 10418240Abstract: A nitride semiconductor structure includes a substrate, a nitride semiconductor layer, and a buffer stack layer between the substrate and the nitride semiconductor layer. The buffer stack layer includes a plurality of metal nitride multilayers repeatedly stacked, wherein each of the metal nitride multilayers consists of a first, a second, and a third metal nitride thin films in sequence, or consists of the first, the third, the second, and the third metal nitride thin films in sequence. The aluminum concentration of the first metal nitride thin film is higher than that of the third metal nitride thin film, and the aluminum concentration of the third metal nitride thin film is higher than that of the second metal nitride thin film.Type: GrantFiled: January 12, 2018Date of Patent: September 17, 2019Assignee: ELITE ADVANCED LASER CORPORATIONInventors: Kun-Chuan Lin, Jin-Hsiang Liu, Yu-Lin Hsiao
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Publication number: 20190157080Abstract: A nitride semiconductor structure includes a substrate, a nitride semiconductor layer, and a buffer stack layer between the substrate and the nitride semiconductor layer. The buffer stack layer includes a plurality of metal nitride multilayers repeatedly stacked, wherein each of the metal nitride multilayers consists of a first, a second, and a third metal nitride thin films in sequence, or consists of the first, the third, the second, and the third metal nitride thin films in sequence. The aluminum concentration of the first metal nitride thin film is higher than that of the third metal nitride thin film, and the aluminum concentration of the third metal nitride thin film is higher than that of the second metal nitride thin film.Type: ApplicationFiled: January 12, 2018Publication date: May 23, 2019Applicant: ELITE ADVANCED LASER CORPORATIONInventors: Kun-Chuan Lin, Jin-Hsiang Liu, Yu-Lin Hsiao
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Patent number: 9304354Abstract: A light-emitting module includes: (a) a liquid-crystal module containing a pair of transparent substrates and a liquid-crystal layer disposed between the pair of transparent substrates; (b) a first light-emitting diode (LED) component disposed on a first side of the liquid-crystal module; (c) a first transparent cover plate over the first LED component such that the first LED component is sandwiched between the liquid-crystal module and the first transparent cover plate; and (d) a control circuit configured to control an on/off frequency of the liquid-crystal module and a light-emitting frequency of the first LED component in such a manner that the light emitted from the first LED component is synchronously shielded by the liquid-crystal module, wherein the light is emitted from a side opposite to the liquid-crystal module.Type: GrantFiled: October 3, 2014Date of Patent: April 5, 2016Assignee: KUN HSIN TECHNOLOGY INC.Inventor: Kun-Chuan Lin
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Publication number: 20150370130Abstract: A light-emitting module includes: (a) a liquid-crystal module containing a pair of transparent substrates and a liquid-crystal layer disposed between the pair of transparent substrates; (b) a first light-emitting diode (LED) component disposed on a first side of the liquid-crystal module; (c) a first transparent cover plate over the first LED component such that the first LED component is sandwiched between the liquid-crystal module and the first transparent cover plate; and (d) a control circuit configured to control an on/off frequency of the liquid-crystal module and a light-emitting frequency of the first LED component in such a manner that the light emitted from the first LED component is synchronously shielded by the liquid-crystal module, wherein the light is emitted from a side opposite to the liquid-crystal module.Type: ApplicationFiled: October 3, 2014Publication date: December 24, 2015Inventor: Kun-Chuan LIN
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Patent number: 8860045Abstract: An embodiment of the present invention provides a light emitting device including: a transparent substrate; a wiring layer disposed on the transparent substrate; a plurality of light emitting diode chips disposed on the transparent substrate and electrically connected to the wiring layer; and an opposite substrate disposed on the transparent substrate to sandwich the light emitting diode chips and the wiring layer, wherein no wiring layer is disposed on a surface of the opposite substrate facing the light emitting diode chips.Type: GrantFiled: August 4, 2012Date of Patent: October 14, 2014Assignee: Kun Hsin TechnologyInventor: Kun-Chuan Lin
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Publication number: 20130256718Abstract: The subject invention relates to a light emitting device, including a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type, wherein the second conductive type is different from the first conductive type; and a passivation layer covering the first and the second semiconductor layers, wherein the passivation layer has a rough surface made from a roughing treatment. The subject invention further discloses a manufacturing method for such light emitting device. The structure of the light emitting device of the subject invention can eliminate unnecessary elements, reduce process time, facilitate control of light emitting shape and further improve light emitting efficiency.Type: ApplicationFiled: March 29, 2013Publication date: October 3, 2013Applicants: KUN-HSIN TECHNOLOGY INC., WINSKY TECHNOLOGY LIMITEDInventor: Kun Chuan LIN
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Publication number: 20130248889Abstract: An embodiment of the present invention provides a light emitting device including: a transparent substrate; a wiring layer disposed on the transparent substrate; a plurality of light emitting diode chips disposed on the transparent substrate and electrically connected to the wiring layer; and an opposite substrate disposed on the transparent substrate to sandwich the light emitting diode chips and the wiring layer, wherein no wiring layer is disposed on a surface of the opposite substrate facing the light emitting diode chips.Type: ApplicationFiled: August 4, 2012Publication date: September 26, 2013Applicant: KUN HSIN TECHNOLOGY INC.Inventor: Kun-Chuan Lin
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Publication number: 20130235553Abstract: The subject invention relates to an illumination device, comprising a lamp holder having a base; and a plurality of LED dies directly bonded on the base. The structure of the illumination device of the subject invention can eliminate unnecessary elements, reduce process time and further improve lighting efficiency.Type: ApplicationFiled: March 5, 2013Publication date: September 12, 2013Applicants: KUN-HSIN TECHNOLOGY INC., WINSKY TECHNOLOGY LIMITEDInventor: KUN CHUAN LIN
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Publication number: 20120104418Abstract: A light-emitting module is provided, including a heat sink and a plurality of insulating layers disposed over the heat sink. A plurality of light-reflective layers is disposed over one of the insulating layers, respectively, wherein the light-reflective layers comprise a plurality of light-reflective inclined surfaces. A plurality of conductive layers is disposed over one of the light-reflective layers, respectively. A light-emitting diode (LED) chip is disposed over the heat sink. A plurality of bonding wires is provided, connecting the LED chip with the conductive layers. A transparent housing is disposed over the LED chip. A phosphor layer is disposed over a surface of the transparent housing facing the heat sink, and does not physically contact the LED chip.Type: ApplicationFiled: December 31, 2010Publication date: May 3, 2012Applicant: KUN HSIN TECHNOLOGY INC.Inventor: Kun-Chuan LIN
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Patent number: 7385236Abstract: The invention provides a BiFET semiconductor device vertically integrating a FET and a HBT on the same substrate. The BiFET semiconductor device comprises a HBT structure, a high-resistivity structure, and a FET structure, sequentially formed in this order from bottom to top on a semi-insulating substrate. The high-resistivity structure comprises at least two layers. A first layer is on top of the HBT structure to provide the required high resistivity, while the second layer having a high purity is on top of the first layer to prevent the doped impurity in the first layer to affect the upper FET structure.Type: GrantFiled: October 21, 2005Date of Patent: June 10, 2008Assignee: Visual Photonics Epitaxy Co., Ltd.Inventors: Yu-Chung Chin, Chao-Hsing Huang, Wei-Chou Wang, Kun-Chuan Lin
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Patent number: 7384808Abstract: A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a first metallic layer from bottom to top on a side of a first substrate. Then, a second layered structure comprising at least a second substrate is provided. Then, the two-layered structures are wafer-bonded together, with the top side of the second layered structure interfacing with the top side of said first layered structure. The first metallic layer functions as a reflective mirror, which is made of a pure metal or a metal nitride to achieve superior reflectivity, and whose reflective surface does not participate in the wafer-bonding process directly.Type: GrantFiled: July 12, 2005Date of Patent: June 10, 2008Assignee: Visual Photonics Epitaxy Co., Ltd.Inventors: Jin-Hsiang Liu, Hui-Heng Wang, Kun-Chuan Lin
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Patent number: 7335924Abstract: An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal or a metal nitride for achieving superior reflectivity. The non-alloy ohmic contact layer is interposed between the metallic layer and the light generating structure so as to achieve the required ohmic contact. To prevent the metallic layer from intermixing with the non-alloy ohmic contact layer and to maintain the flatness of the reflective surface of the first metallic layer, an optional dielectric layer is interposed between the metallic layer and the non-alloy ohmic contact layer.Type: GrantFiled: July 12, 2005Date of Patent: February 26, 2008Assignee: Visual Photonics Epitaxy Co., Ltd.Inventors: Jin-Hsiang Liu, Hui-Heng Wang, Kun-Chuan Lin
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Publication number: 20070181905Abstract: A LED structure with enhanced side-emitting capability is provided. An embodiment of The LED structure comprises, on top of a substrate, a metallic layer, a non-alloy ohmic contact layer, a thick transparent layer, a light generating structure, sequentially arranged in the this order from bottom to top. The metallic layer functions a reflective mirror and is made of a pure metal or a metal nitride for superior reflectivity. The non-alloy ohmic contact layer is interposed between the light generating structure and the metallic layer so as to achieve the required low resistance electrical conduction. The thick transparent layer extracts a significant portion of the light to the sides of the LED structure. The thick transparent layer, made of a semiconductor material or a dielectric material having an refractive index between 1.5 to 3.5, could be located either above, below or both above and below the light generating structure.Type: ApplicationFiled: February 7, 2006Publication date: August 9, 2007Inventors: Hui-Heng Wang, Jin-Hsiang Liu, Kun-Chuan Lin
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Patent number: 7224005Abstract: A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0?x?1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0?y, z?1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.Type: GrantFiled: September 3, 2004Date of Patent: May 29, 2007Assignee: Visual Photonics Epitaxy Co., Ltd.Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Huai-Tung Yang, Kun-Chuan Lin, Shih-Jane Tsai
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Publication number: 20070090399Abstract: The invention provides a BiFET semiconductor device vertically integrating a FET and a HBT on the same substrate. The BiFET semiconductor device comprises a HBT structure, a high-resistivity structure, and a FET structure, sequentially formed in this order from bottom to top on a semi-insulating substrate. The high-resistivity structure comprises at least two layers. A first layer is on top of the HBT structure to provide the required high resistivity, while the second layer having a high purity is on top of the first layer to prevent the doped impurity in the first layer to affect the upper FET structure.Type: ApplicationFiled: October 21, 2005Publication date: April 26, 2007Inventors: Yu-Chung Chin, Chao-Hsing Huang, Wei-Chou Wang, Kun-Chuan Lin
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Publication number: 20070020788Abstract: A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a first metallic layer from bottom to top on a side of a first substrate. Then, a second layered structure comprising at least a second substrate is provided. Then, the two-layered structures are wafer-bonded together, with the top side of the second layered structure interfacing with the top side of said first layered structure. The first metallic layer functions as a reflective mirror, which is made of a pure metal or a metal nitride to achieve superior reflectivity, and whose reflective surface does not participate in the wafer-bonding process directly.Type: ApplicationFiled: July 12, 2005Publication date: January 25, 2007Inventors: Jin-Hsiang Liu, Hui-Heng Wang, Kun-Chuan Lin
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Publication number: 20070012937Abstract: An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal or a metal nitride for achieving superior reflectivity. The non-alloy ohmic contact layer is interposed between the metallic layer and the light generating structure so as to achieve the required ohmic contact. To prevent the metallic layer from intermixing with the non-alloy ohmic contact layer and to maintain the flatness of the reflective surface of the first metallic layer, an optional dielectric layer is interposed between the metallic layer and the non-alloy ohmic contact layer.Type: ApplicationFiled: July 12, 2005Publication date: January 18, 2007Inventors: Jin-Hsiang Liu, Hui-Heng Wang, Kun-Chuan Lin
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Publication number: 20050051799Abstract: A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1?x, 0.0?x?1.0) and/or indium-gallium-arsenic-nitride (InyGa1?yAszN1?z, 0.0?y, z?1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.Type: ApplicationFiled: September 3, 2004Publication date: March 10, 2005Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Huai-Tung Yang, Kun-Chuan Lin, Shih-Jane Tsai
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Patent number: 6287882Abstract: A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a metal-coated reflective permanent substrate and then removing the temporary substrate. The reflective metal layer also serves as a bonding agent for bonding the permanent substrate. The bonded LED element and permanent substrate are heated in a wafer bonding tool that includes a graphite lower chamber and a graphite upper cover with a stainless steel screw. Because of the different thermal expansion coefficients between stainless and graphite, the stainless steel screw applies a pressure to the bonded structure during the heating process to assist the bonding of the permanent substrate.Type: GrantFiled: October 4, 1999Date of Patent: September 11, 2001Assignee: Visual Photonics Epitaxy Co., Ltd.Inventors: Kuo-Hsiung Chang, Kun-Chuan Lin, Ray-Hua Horng, Man-Fang Huang, Dong-Sing Wuu, Sun-Chin Wei