Abstract: A method for patterning passivation layers including providing a semiconductor wafer comprising metal interconnects; forming a dielectric passivation layer on the metal interconnects; forming a photosensitive polymeric passivation layer on the dielectric passivation layer; patterning the photosensitive polymeric passivation layer in a first patterning process to form a first opening revealing a portion of the dielectric passivation layer; and, patterning the portion of the dielectric passivation layer in a second patterning process to form at least a second opening in the dielectric passivation layer.

Abstract: A method for patterning passivation layers including providing a semiconductor wafer comprising metal interconnects; forming a dielectric passivation layer on the metal interconnects; forming a photosensitive polymeric passivation layer on the dielectric passivation layer; patterning the photosensitive polymeric passivation layer in a first patterning process to form a first opening revealing a portion of the dielectric passivation layer; and, patterning the portion of the dielectric passivation layer in a second patterning process to form at least a second opening in the dielectric passivation layer.

Abstract: A method for exposing a blanket photoresist layer employs exposing a minimum of two non-overlapping die sub-patterns within a single die region of the blanket photoresist layer, each exposed while employing a minimum of two separate masks. The use of the multiple masks and multiple sub-patterns provides upon development a patterned photoresist layer with enhanced dimensional precision and uniformity.