Patents by Inventor Kun Hou

Kun Hou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120074367
    Abstract: A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming a memory element coupled in series with the diode. Other aspects are also provided.
    Type: Application
    Filed: September 28, 2010
    Publication date: March 29, 2012
    Inventors: Xiying Costa, Abhijit Bandyopadhyay, Kun Hou, Brian Le, Yung-Tin Chen
  • Publication number: 20120001150
    Abstract: In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (“CNT”) material above the substrate, wherein the CNT material comprises a single CNT. Numerous other aspects are provided.
    Type: Application
    Filed: September 18, 2011
    Publication date: January 5, 2012
    Inventors: April D. Schricker, Wu-Yi Chien, Kun Hou, Raghuveer S. Makala, Jingyan Zhang, Yibo Nian
  • Patent number: 8080289
    Abstract: A method for making an aligned carbon nanotube includes the steps of a) applying a layer of a ferrosilicon alloy film onto a substrate, b) etching the layer of the ferrosilicon film to form a plurality of fine ferrosilicon alloy particles that are distributed properly on the substrate, and c) placing the substrate of step (b) into a microwave plasma enhanced chemical vapor deposition system, and supplying a mixture of a carbon-containing reaction gas and a balance gas at a predetermined flow ratio so as to grow carbon nanotubes on the fine ferrosilicon alloy particles, wherein said ferrosilicon alloy of step (a) comprises silicon ranging from 15 wt % to 25 wt %; and step (c) is conducted at a temperature ranging from 300 to 380° C.
    Type: Grant
    Filed: September 15, 2008
    Date of Patent: December 20, 2011
    Assignee: National Cheng Kung University
    Inventors: Jyh-Ming Ting, Kun-Hou Liao
  • Publication number: 20110175038
    Abstract: Compositions of carbon nanoflakes are coated with a low Z compound, where an effective electron emission of the carbon nanoflakes coated with the low Z compound is improved compared to an effective electron emission of the same carbon nanoflakes that are not coated with the low Z compound or of the low Z compound that is not coated onto the carbon nanoflakes. Compositions of chromium oxide and molybdenum carbide-coated carbon nanoflakes are also described, as well as applications of these compositions. Carbon nanoflakes are formed and a low Z compound coating, such as a chromium oxide or molybdenum carbide coating, is formed on the surfaces of carbon nanoflakes. The coated carbon nanoflakes have excellent field emission properties.
    Type: Application
    Filed: January 26, 2009
    Publication date: July 21, 2011
    Inventors: Kun Hou, Dennis M. Manos, Ronald A. Outlaw
  • Publication number: 20110169126
    Abstract: A nonvolatile memory cell including a storage element in series with a diode steering element. At least one interface of the diode steering element is passivated.
    Type: Application
    Filed: January 8, 2010
    Publication date: July 14, 2011
    Inventors: Xiying Chen, Kun Hou, Chuanbin Pan, Abhijit Bandyopadhyay, Yung-Tin Chen
  • Publication number: 20110062557
    Abstract: A semiconductor p-i-n diode and method for forming the same are described herein. In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode. The SiGe region may serve to lower the contact resistance, which may increase the forward bias current. The doped region extends below the SiGe region such that it is between the SiGe region and an intrinsic region of the diode. The p-i-n diode may be formed from silicon. The doped region below the SiGe region may serve to keep the reverse bias current from increasing as result of the added SiGe region. In one embodiment, the SiGe is formed such that the forward bias current of an up-pointing p-i-n diode in a memory array substantially matches the forward bias current of a down-pointing p-i-n diode which may achieve better switching results when these diodes are used with the R/W material in a 3D memory array.
    Type: Application
    Filed: September 17, 2009
    Publication date: March 17, 2011
    Inventors: Abhijit Bandyopadhyay, Kun Hou, Steven Maxwell
  • Publication number: 20090039055
    Abstract: A method for making an aligned carbon nanotube includes the steps of a) applying a layer of a ferrosilicon alloy film onto a substrate, b) etching the layer of the ferrosilicon film to form a plurality of fine ferrosilicon alloy particles that are distributed properly on the substrate, and c) placing the substrate of step (b) into a microwave plasma enhanced chemical vapor deposition system, and supplying a mixture of a carbon-containing reaction gas and a balance gas at a predetermined flow ratio so as to grow carbon nanotubes on the fine ferrosilicon alloy particles, wherein said ferrosilicon alloy of step (a) comprises silicon ranging from 15 wt % to 25 wt %; and step (c) is conducted at a temperature ranging from 300 to 380° C.
    Type: Application
    Filed: September 15, 2008
    Publication date: February 12, 2009
    Applicant: National Cheng Kung University
    Inventors: Jyh-Ming Ting, Kun-Hou Liao
  • Publication number: 20060068126
    Abstract: A method for making an aligned carbon nanotube includes the steps of a) applying a layer of a ferrosilicon alloy film onto a substrate, b) etching the layer of the ferrosilicon film to form a plurality of fine ferrosilicon alloy particles that are distributed properly on the substrate, and c) placing the substrate of step (b) into a microwave plasma enhanced chemical vapor deposition system, and supplying a mixture of a carbon-containing reaction gas and a balance gas at a predetermined flow ratio so as to grow carbon nanotubes on the fine ferrosilicon alloy particles.
    Type: Application
    Filed: January 5, 2005
    Publication date: March 30, 2006
    Applicant: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Jyh-Ming Ting, Kun-Hou Liao
  • Patent number: D606999
    Type: Grant
    Filed: November 14, 2008
    Date of Patent: December 29, 2009
    Assignee: FIH (Hong Kong) Limited
    Inventors: Shu-Gang He, Chung-Kun Hou
  • Patent number: D608750
    Type: Grant
    Filed: October 16, 2008
    Date of Patent: January 26, 2010
    Assignee: FIH (Hong Kong) Limited
    Inventors: Shu-Gang He, Chung-Kun Hou
  • Patent number: D609713
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: February 9, 2010
    Assignee: FIH (Hong Kong) Limited
    Inventors: Kun Du, Chung-Kun Hou
  • Patent number: D616406
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: May 25, 2010
    Assignee: FIH (Hong Kong) Limited
    Inventors: Kun Du, Chung-Kun Hou