Patents by Inventor Kun-Hsiang Lin

Kun-Hsiang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Grounded Metal Ring Structure For Through-Silicon Via
    Publication number: 20240387410
    Abstract: The present disclosure describes a semiconductor structure including a TSV in contact with a substrate and a metal ring structure laterally surrounding the TSV. The metal ring structure includes one or more metal rings arranged as a stack and one or more metal vias interposed between two adjacent metal rings of the one or more metal rings. The metal ring structure is electrically coupled to the substrate through one or more conductive structures.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Chang CHEN, Kun-Hsiang LIN, Cheng-Chien LI
  • Grounded metal ring structure for through-silicon via
    Patent number: 12136600
    Abstract: The present disclosure describes a semiconductor structure including a TSV in contact with a substrate and a metal ring structure laterally surrounding the TSV. The metal ring structure includes one or more metal rings arranged as a stack and one or more metal vias interposed between two adjacent metal rings of the one or more metal rings. The metal ring structure is electrically coupled to the substrate through one or more conductive structures.
    Type: Grant
    Filed: September 8, 2021
    Date of Patent: November 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Chang Chen, Kun-Hsiang Lin, Cheng-Chien Li
  • GROUNDED METAL RING STRUCTURE FOR THROUGH-SILICON VIA
    Publication number: 20220328429
    Abstract: The present disclosure describes a semiconductor structure including a TSV in contact with a substrate and a metal ring structure laterally surrounding the TSV. The metal ring structure includes one or more metal rings arranged as a stack and one or more metal vias interposed between two adjacent metal rings of the one or more metal rings. The metal ring structure is electrically coupled to the substrate through one or more conductive structures.
    Type: Application
    Filed: September 8, 2021
    Publication date: October 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Chang CHEN, Kun-Hsiang Lin, Cheng-Chien Li
  • Adjusting intensity of laser beam during laser operation on a semiconductor device
    Patent number: 9378990
    Abstract: Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: June 28, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Lee-Te Tseng, Chih-Hsien Ou, Kun-Hsiang Lin, Yi-Hann Chen, Ming-Te Chen
  • ADJUSTING INTENSITY OF LASER BEAM DURING LASER OPERATION ON A SEMICONDUCTOR DEVICE
    Publication number: 20150303080
    Abstract: Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.
    Type: Application
    Filed: June 29, 2015
    Publication date: October 22, 2015
    Inventors: Lee-Te Tseng, Chih-Hsien Ou, Kun-Hsiang Lin, Yi-Hann Chen, Ming-Te Chen
  • Adjusting intensity of laser beam during laser operation on a semiconductor device
    Patent number: 9070591
    Abstract: Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.
    Type: Grant
    Filed: December 24, 2012
    Date of Patent: June 30, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Lee-Te Tseng, Chih-Hsien Ou, Kun-Hsiang Lin, Yi-Hann Chen, Ming-Te Chen