Abstract: A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.

Abstract: A switching control circuit for use in controlling a resonant flyback power converter generates a first driving signal and a second driving signal. The first driving signal is configured to turn on the first transistor to generate a first current to magnetize a transformer and charge a resonant capacitor. The transformer and charge a resonant capacitor are connected in series. The second driving signal is configured to turn on the second transistor to generate a second current to discharge the resonant capacitor. During a power-on period of the resonant flyback power converter, the second driving signal includes a plurality of short-pulses configured to turn on the second transistor for discharging the resonant capacitor. A pulse-width of the short-pulses of the second driving signal is short to an extent that the second current does not exceed a current limit threshold.

Abstract: A resonant flyback power converter includes: a first and a second transistors which form a half-bridge circuit for switching a transformer and a resonant capacitor to generate an output voltage; a current-sense device for sensing a switching current of the half-bridge circuit to generate a current-sense signal; and a switching control circuit generating a first and a second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal controls the half-bridge circuit to generate a positive current to magnetize the transformer and charge the resonant capacitor. The turn-on of the second driving signal controls the half-bridge circuit to generate a negative current to discharge the resonant capacitor. The switching control circuit turns off the first transistor when the positive current exceeds a positive-over-current threshold, and/or, turns off the second transistor when the negative current exceeds a negative-over-current threshold.

Abstract: A sewing machine includes a main body and a quick release needle plate module. The main body includes a base seat having an inner frame, and an outer case that is mounted to the inner frame and that defines an accommodating compartment. The quick release needle plate module includes a catch member, and a needle plate that covers the accommodating compartment, that is detachably pivoted to a rear section of the inner frame, and that engages the catch member. The quick release needle plate module further includes a press member inserted through the outer case and the inner frame, and operable to push the catch member to disengage the catch member. The needle plate has a plate body that covers the accommodating compartment, and a resilient member mounted between the inner frame and the plate body for driving pivot action of the plate body away from the inner frame.

Abstract: The disclosure generally relates to power over fiber technology configured to provide electrical power and communications via fiber to one or more sensors of one or more varieties. More particularly, the disclosure relates to a sensor system comprising a laser data module operatively connected to a powered sensor module, wherein the powered sensor module receives a light, converts the light to electrical power, and powers a sensor with the electrical power, and wherein the powered sensor module transmits signals from the sensor to a laser data module.

Abstract: This disclosure presents a power switching module combining a novel gate driver with a photonic isolated power source which can output a high voltage and high power at the same time, and thus can drive a power semiconductor device. The disclosed power switching module could simplify the switched mode power supply structure to (1) replace the isolated power supply module; (2) simplify circuitry of the gate driver by integrating gate driver signaling opto-electronics; and (3) provide a module with power semiconductor device under switched mode power supply structure.

Abstract: The disclosure generally relates to power over fiber technology configured to provide electrical power and communications via fiber to one or more sensors of one or more varieties. More particularly, the disclosure relates to a sensor system comprising a laser data module operatively connected to a powered sensor module, wherein the powered sensor module receives a light, converts the light to electrical power, and powers a sensor with the electrical power, and wherein the powered sensor module transmits signals from the sensor to a laser data module.

Abstract: A Schottky diode with high antistatic capability has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

Abstract: A Schottky diode with high antistatic capability has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

Abstract: A Schottky diode with a lowered forward voltage drop has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring inside which is a P-type doped layer. The surface of the N? type doped drift layer is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer within the P-type doped layer forms a Schottky barrier. An upward extending N type doped layer is formed on the N+ type doped layer and under the Schottky barrier to reduce the thickness of the N? type doped drift layer under the Schottky barrier. This lowers the forward voltage drop of the Schottky diode.

Abstract: A Schottky diode with a low forward voltage drop has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a first surface with a protection ring inside which is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky barrier. The height of the Schottky barrier is lower than the surface of the N? type doped drift layer, thereby reducing the thickness of the N? type doped drift layer under the Schottky barrier. This configuration reduces the forward voltage drop of the Schottky barrier.

Abstract: A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plurality of dot-shaped or line-shaped second conductive material regions are formed on the surface of the first conductive material semiconductor substrate connecting to the metal layer. The second conductive material regions form depletion regions in the first conductive material semiconductor substrate. The depletion regions can reduce the leakage current area of the Schottky diode, thereby reducing the reverse leakage current and the forward voltage drop. When the first conductive material is a P-type semiconductor, the second conductive material is an N-type semiconductor. When the first conductive material is an N-type semiconductor, the second conductive material is a P-type semiconductor.