Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.

Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.

Abstract: A model training method and an electronic device are provided. The method includes the following steps: establishing a brain age prediction model according to a training set; adjusting a parameter in the brain age prediction model according to a validation set; inputting a test set into the brain age prediction model with the adjusted parameter to obtain a plurality of first predicted brain ages; determining whether the first predicted brain ages satisfy a first specific condition; and completing training of the brain age prediction model when the first predicted brain ages satisfy the first specific condition.

Abstract: A model training method and an electronic device are provided. The method includes the following steps: establishing a brain age prediction model according to a training set; adjusting a parameter in the brain age prediction model according to a validation set; inputting a test set into the brain age prediction model with the adjusted parameter to obtain a plurality of first predicted brain ages; determining whether the first predicted brain ages satisfy a first specific condition; and completing training of the brain age prediction model when the first predicted brain ages satisfy the first specific condition.