Patents by Inventor Kun-Hsuan Chung

Kun-Hsuan Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11145546
    Abstract: The present invention relates to a semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure, an insulating stacked structure and a first conductive layer. The gate structure is disposed on the substrate, and the insulating stacked structure covers the gate structure and the substrate to define a first opening thereinto expose a portion of the gate structure and a portion of the substrate. The first conductive layer covers surfaces of the first opening to directly contact the portion of the substrate and the portion of the gate structure, with the first conductive layer including two outer extension wings on a top surface of the insulating stacked structure.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: October 12, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Wu Wan, Tien-Hsiang Cheng, Kun-Hsuan Chung
  • Publication number: 20200251388
    Abstract: The present invention relates to a semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure, an insulating stacked structure and a first conductive layer. The gate structure is disposed on the substrate, and the insulating stacked structure covers the gate structure and the substrate to define a first opening thereinto expose a portion of the gate structure and a portion of the substrate. The first conductive layer covers surfaces of the first opening to directly contact the portion of the substrate and the portion of the gate structure, with the first conductive layer including two outer extension wings on a top surface of the insulating stacked structure.
    Type: Application
    Filed: April 21, 2020
    Publication date: August 6, 2020
    Inventors: Wen-Wu Wan, Tien-Hsiang Cheng, Kun-Hsuan Chung
  • Patent number: 10672658
    Abstract: The present invention relates to a semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure, an insulating stacked structure and a first conductive layer. The gate structure is disposed on the substrate, and the insulating stacked structure covers the gate structure and the substrate to define a first opening therein to expose a portion of the gate structure and a portion of the substrate. The first conductive layer covers surfaces of the first opening to directly contact the portion of the substrate and the portion of the gate structure, with the first conductive layer including two outer extension wings on a top surface of the insulating stacked structure.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: June 2, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Wu Wan, Tien-Hsiang Cheng, Kun-Hsuan Chung
  • Publication number: 20200035557
    Abstract: The present invention relates to a semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure, an insulating stacked structure and a first conductive layer. The gate structure is disposed on the substrate, and the insulating stacked structure covers the gate structure and the substrate to define a first opening thereinto expose a portion of the gate structure and a portion of the substrate. The first conductive layer covers surfaces of the first opening to directly in contact with the portion of the substrate and the portion of the gate structure, with the first conductive layer including two outer extension wings on a top surface of the insulating stacked structure.
    Type: Application
    Filed: August 30, 2018
    Publication date: January 30, 2020
    Inventors: Wen-Wu Wan, Tien-Hsiang Cheng, Kun-Hsuan Chung