Patents by Inventor Kun-Hsuan Tien

Kun-Hsuan Tien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quasi-vertical power MOSFET and methods of forming the same
    Patent number: 9818859
    Abstract: A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity type opposite the first conductivity type. The MOSFET further includes a gate oxide, and a gate electrode separated from the body region by the gate oxide. A portion of the gate oxide and a portion of the gate electrode are below the top surface of the body region.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: November 14, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Chih Chen, Kun-Hsuan Tien, Ruey-Hsin Liu
  • Quasi-Vertical Power MOSFET and Methods of Forming the Same
    Publication number: 20130049108
    Abstract: A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity type opposite the first conductivity type. The MOSFET further includes a gate oxide, and a gate electrode separated from the body region by the gate oxide. A portion of the gate oxide and a portion of the gate electrode are below the top surface of the body region.
    Type: Application
    Filed: August 26, 2011
    Publication date: February 28, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Chih Chen, Kun-Hsuan Tien, Ruey-Hsin Liu