Abstract: A display device includes a base layer, a touch sensing layer, a light guide module and a display panel. The touch sensing layer is disposed on the base layer. The light guide module is disposed on the touch sensing layer. The touch sensing layer is located between the light guide module and the display panel, and the touch sensing layer and one of the light guide module and the display panel have no adhesive material therebetween.

Abstract: A method and a structure for suppressing resonance in an anti-shake lens focusing module are disclosed. The resonance suppressing method includes the steps of providing a lens focusing structure having a first movable part and a first immovable part; providing an anti-shake structure having a second movable part and a second immovable part; providing at least one shock-absorbing material between the first movable and immovable parts as well as between the second movable and immovable parts; and using the shock-absorbing material to absorb any vibration caused by movements of the first and the second movable part, so as to suppress any resonance possibly generated due to the movements of the first and the second movable part.

Abstract: A method and a structure for suppressing resonance in an anti-shake lens focusing module are disclosed. The resonance suppressing method includes the steps of providing a lens focusing structure having a first movable part and a first immovable part; providing an anti-shake structure having a second movable part and a second immovable part; providing at least one shock-absorbing material between the first movable and immovable parts as well as between the second movable and immovable parts; and using the shock-absorbing material to absorb any vibration caused by movements of the first and the second movable part, so as to suppress any resonance possibly generated due to the movements of the first and the second movable part.

Abstract: This invention discloses a novel design to obtain a good coating uniformity and to reduce the volume of viscous materials when coating by spraying the viscous material on the wafer during the first time period at a first predetermined pressures; spraying the viscous material on the wafer at a second predetermined pressure in response to the end of the first time period, the second predetermined pressure being lower than the first predetermined pressure; and spraying the viscous material on the wafer during a second time period at a time-varying pressure, the time-varying pressure being increased from the second predetermined pressure to a third predetermined pressure during the second time period.

Abstract: Correction of overlay shift of an epitaxial silicon layer deposited on a semiconductor wafer, and of post-epitaxial silicon layers subsequently deposited, is disclosed. When an epitaxial silicon layer of a given thickness is deposited, the zero mark coordinates for the deposition are shifted relative to alignment marks on the wafer by a distance based on the thickness of the layer. The distance is preferably proportional to the thickness of the epi layer. This prevents overlay shift of the epi layer. For post-epitaxial silicon layers subsequently deposited, preferably except for the first post-epi layer, a clear out process is initially performed to maintain the alignment marks on the semiconductor wafer. In this way, overlay shift, or misalignment, of the post-epi layers is also prevented.

Abstract: Correction of overlay shift of an epitaxial silicon layer deposited on a semiconductor wafer, and of post-epitaxial silicon layers subsequently deposited, is disclosed. When an epitaxial silicon layer of a given thickness is deposited, the zero mark coordinates for the deposition are shifted relative to alignment marks on the wafer by a distance based on the thickness of the layer. The distance is preferably proportional to the thickness of the epi layer. This prevents overlay shift of the epi layer. For post-epitaxial silicon layers subsequently deposited, preferably except for the first post-epi layer, a clear out process is initially performed to maintain the alignment marks on the semiconductor wafer. In this way, overlay shift, or misalignment, of the post-epi layers is also prevented.

Abstract: This invention discloses a novel design to obtain a good coating uniformity and to reduce the volume of viscous materials when coating by spraying the viscous material on the wafer during the first time period at a first predetermined pressures; spraying the viscous material on the wafer at a second predetermined pressure in response to the end of the first time period, the second predetermined pressure being lower than the first predetermined pressure; and spraying the viscous material on the wafer during a second time period at a time-varying pressure, the time-varying pressure being increased from the second predetermined pressure to a third predetermined pressure during the second time period.

Abstract: A method for spin-coating a high viscosity liquid on a wafer surface capable of producing an improved uniformity in the coating thickness and a reduced material usage is disclosed. In the method, a liquid that has a high viscosity of at least 1000 cp is first provided. A wafer is then rotated to a speed of less than 300 rpm while simultaneously, a first volume of a high viscosity liquid is dispensed onto the wafer surface forming a cup-shaped pattern. The spinning of the wafer is then stopped and a second volume of the high viscosity liquid is dispensed into a cavity formed in the cup-shaped pattern to substantially fill the cavity. The wafer is then rotated again to a high rotational speed of at least 3000 rpm such that liquid in the cup-shaped pattern spreads out to substantially cover an entire surface of the wafer resulting in improved coating uniformity.

Abstract: A method for spin-coating a high viscosity liquid on a wafer surface capable of producing an improved uniformity in the coating thickness and a reduced material usage is disclosed. In the method, a liquid that has a high viscosity of at least 1000 cp is first provided. A wafer is then rotated to a speed of less than 300 rpm while simultaneously, a first volume of a high viscosity liquid is dispensed onto the wafer surface forming a cup-shaped pattern. The spinning of the wafer is then stopped and a second volume of the high viscosity liquid is dispensed into a cavity formed in the cup-shaped pattern to substantially fill the cavity. The wafer is then rotated again to a high rotational speed of at least 3000 rpm such that liquid in the cup-shaped pattern spreads out to substantially cover an entire surface of the wafer resulting in improved coating uniformity.