Patents by Inventor Kun-joong Park

Kun-joong Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6821901
    Abstract: A method of through-etching a substrate that is simplified and by which the flow of ions can be kept to be regular during a plasma dry etching process, is provided. According to this method, a buffer layer is formed on a first plane of the substrate, a metal layer is formed on the buffer layer, an etching mask pattern is formed on a second plane opposite to the first plane, and the substrate is through-etched with the etching mask pattern as an etching mask. Preferably, the substrate is formed of a single-crystal silicon, the buffer layer is formed of silicon dioxide, and the metal layer is formed of aluminum.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: November 23, 2004
    Inventors: Seung-jin Song, Kyoungdoug Min, Young-chang Joo, Hong-seok Min, Sejun Kim, Kun-joong Park
  • Publication number: 20030162402
    Abstract: A method of through-etching a substrate that is simplified and by which the flow of ions can be kept to be regular during a plasma dry etching process, is provided. According to this method, a buffer layer is formed on a first plane of the substrate, a metal layer is formed on the buffer layer, an etching mask pattern is formed on a second plane opposite to the first plane, and the substrate is through-etched with the etching mask pattern as an etching mask. Preferably, the substrate is formed of a single-crystal silicon, the buffer layer is formed of silicon dioxide, and the metal layer is formed of aluminum.
    Type: Application
    Filed: February 28, 2002
    Publication date: August 28, 2003
    Inventors: Seung-jin Song, Kyoungdoug Min, Young-chang Joo, Hong-seok Min, Sejun Kim, Kun-joong Park