Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A charge pump includes a first current source, a second current source, a first switch, a second switch, a third switch, a fourth switch, a reset switch, an inverse reset switch and a capacitance. The first and third switches have first terminals coupled to the first current source. The second and fourth switches have first terminals coupled to the second current source. The first, second and reset switches have second terminals coupled to a first terminal of the inverse reset switch. The reset switch has a first terminal coupled to second terminals of the third and fourth switches. The first and second switches are respectively controlled by first and second control signals, the third and fourth switches are respectively controlled by inverse signals of the first and second control signals, and the inverse reset switch is controlled by the inverse reset signal.

Abstract: An apparatus and a method for sensing temperature are provided. The apparatus includes a first oscillation circuit, a pulse width generator, and a comparison circuit. The first oscillation circuit is for generating a first signal having a first frequency which is related to a to-be-sensed temperature. The pulse width generator is for generating a pulse width signal, the pulse width signal having a pulse width related to the to-be-sensed temperature. The comparison circuit is for generating an output signal indicative of the value of the to-be-sensed temperature according to the first signal and the pulse width signal.

Abstract: A charge pump includes a first current source, a second current source, a first switch, a second switch, a third switch, a fourth switch, a reset switch, an inverse reset switch and a capacitance. The first and third switches have first terminals coupled to the first current source. The second and fourth switches have first terminals coupled to the second current source. The first, second and reset switches have second terminals coupled to a first terminal of the inverse reset switch. The reset switch has a first terminal coupled to second terminals of the third and fourth switches. The first and second switches are respectively controlled by first and second control signals, the third and fourth switches are respectively controlled by inverse signals of the first and second control signals, and the inverse reset switch is controlled by the inverse reset signal.

Abstract: In an orthogonal frequency division multiplexing (OFDM) system, a frequency domain channel estimate for non-nullified subcarriers is converted to a time domain channel estimate. The number of taps L of a channel model is determined based on the time domain channel estimate. An improved time domain channel estimate is obtained by computing L tap coefficients of the channel model from the frequency domain channel estimate. An improved frequency domain channel estimate is obtained by performing a Fourier transform on the improved time domain channel estimate. Alternatively, a time domain truncation method may be performed selectively only if the signal-to-noise ratio (SNR) is below a threshold. Alternatively, a frequency domain channel estimate for pilot subcarriers are converted to a time domain channel estimate and an improved frequency domain channel estimate is obtained based on the number of pilot subcarriers and a delay spread.