Patents by Inventor Kun-Ju Tsai

Kun-Ju Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10722998
    Abstract: The present invention provides a wafer polishing pad, the wafer polishing pad includes a polishing material layer, a plurality of recesses are formed on the top surface of the polishing material layer, and a warning element disposed within the polishing material layer, the warning element and the polishing material layer have different colors. The feature of the invention is that forming a warning element in the polishing material layer, when the visible state of the warning element is changed, for example, when the warning element appears, disappears or changes the shapes, it means that the wafer polishing pad needs to be replaced. In this way, the user can confirm the destroying situation of the wafer polishing pad easily, and also improving the manufacturing process efficiency.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: July 28, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Li-Chieh Hsu, Fu-Shou Tsai, Kun-Ju Li, Po-Cheng Huang, Chun-Liang Liu
  • Publication number: 20200212290
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.
    Type: Application
    Filed: January 23, 2019
    Publication date: July 2, 2020
    Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
  • Patent number: 10290723
    Abstract: A semiconductor device includes a substrate and a gate structure on the substrate, in which the gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, the middle portion being a nitrogen rich portion, the top portion and the bottom portion being titanium rich portions, and the top portion, the middle portion, and the bottom portion are of same material composition.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: May 14, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Tsen Lu, Chien-Ming Lai, Lu-Sheng Chou, Ya-Huei Tsai, Ching-Hsiang Chiu, Yu-Tung Hsiao, Chen-Ming Huang, Kun-Ju Li, Yu-Ping Wang
  • Patent number: 8253499
    Abstract: A charge pump includes a first current source, a second current source, a first switch, a second switch, a third switch, a fourth switch, a reset switch, an inverse reset switch and a capacitance. The first and third switches have first terminals coupled to the first current source. The second and fourth switches have first terminals coupled to the second current source. The first, second and reset switches have second terminals coupled to a first terminal of the inverse reset switch. The reset switch has a first terminal coupled to second terminals of the third and fourth switches. The first and second switches are respectively controlled by first and second control signals, the third and fourth switches are respectively controlled by inverse signals of the first and second control signals, and the inverse reset switch is controlled by the inverse reset signal.
    Type: Grant
    Filed: January 24, 2011
    Date of Patent: August 28, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Meng-Ting Tsai, Kun-Ju Tsai, Yung-Chih Liang
  • Publication number: 20120170616
    Abstract: An apparatus and a method for sensing temperature are provided. The apparatus includes a first oscillation circuit, a pulse width generator, and a comparison circuit. The first oscillation circuit is for generating a first signal having a first frequency which is related to a to-be-sensed temperature. The pulse width generator is for generating a pulse width signal, the pulse width signal having a pulse width related to the to-be-sensed temperature. The comparison circuit is for generating an output signal indicative of the value of the to-be-sensed temperature according to the first signal and the pulse width signal.
    Type: Application
    Filed: May 27, 2011
    Publication date: July 5, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Kun-Ju Tsai, Shang-Yuan Lin, Shi-Wen Chen, Ming-Hung Chang, Wei Hwang
  • Publication number: 20120139650
    Abstract: A charge pump includes a first current source, a second current source, a first switch, a second switch, a third switch, a fourth switch, a reset switch, an inverse reset switch and a capacitance. The first and third switches have first terminals coupled to the first current source. The second and fourth switches have first terminals coupled to the second current source. The first, second and reset switches have second terminals coupled to a first terminal of the inverse reset switch. The reset switch has a first terminal coupled to second terminals of the third and fourth switches. The first and second switches are respectively controlled by first and second control signals, the third and fourth switches are respectively controlled by inverse signals of the first and second control signals, and the inverse reset switch is controlled by the inverse reset signal.
    Type: Application
    Filed: January 24, 2011
    Publication date: June 7, 2012
    Inventors: Meng-Ting TSAI, Kun-Ju Tsai, Yung-Chih Liang
  • Publication number: 20070206689
    Abstract: In an orthogonal frequency division multiplexing (OFDM) system, a frequency domain channel estimate for non-nullified subcarriers is converted to a time domain channel estimate. The number of taps L of a channel model is determined based on the time domain channel estimate. An improved time domain channel estimate is obtained by computing L tap coefficients of the channel model from the frequency domain channel estimate. An improved frequency domain channel estimate is obtained by performing a Fourier transform on the improved time domain channel estimate. Alternatively, a time domain truncation method may be performed selectively only if the signal-to-noise ratio (SNR) is below a threshold. Alternatively, a frequency domain channel estimate for pilot subcarriers are converted to a time domain channel estimate and an improved frequency domain channel estimate is obtained based on the number of pilot subcarriers and a delay spread.
    Type: Application
    Filed: March 1, 2007
    Publication date: September 6, 2007
    Applicant: INTERDIGITAL TECHNOLOGY CORPORATION
    Inventors: Chang-Soo Koo, Eldad Zeira, I-Tai Lu, Robert Olesen, Kun-Ju Tsai