Abstract: Provided is a method for preparing iridium oxide, comprising the steps of: preparing iridium chloride; mixing iridium chloride, a solvent and a pore control agent to prepare a dispersion; mixing the dispersion with an ion exchanging agent and performing ion exchange; removing the solvent from the dispersion to prepare a powder; and heat-treating the powder.

Abstract: A bonding structure of a semiconductor package device that physically and electrically connects between a semiconductor chip and a package substrate or between a package substrate and a board, the bonding structure includes a solder; a main pad that faces the solder; and an electrically conductive support structure that is connected between the solder and the main pad, the electrically conductive support structure including a sub pad bonded to the solder, the sub pad being spaced apart from the main pad and facing the main pad, and at least one leg extending from the sub pad to the main pad.

Abstract: The sintered body includes boron carbide, wherein a volume ratio of grains of the boron carbide having a grain size greater than 1 ?m and less than or equal to 4 ?m is 61% to 86% based on a volume ratio of total grains on a surface of the sintered body.

Abstract: The sintered body including silicon oxide and carbon, wherein the sintered body has a D band peak at a wave number of 1,311 cm?1 to 1,371 cm?1 and a G band peak at a wave number of 1,572 cm?1 to 1,632 cm?1 in a Raman spectrum, and wherein the D band peak or the G band peak have a higher intensity than a fifth peak present at a wave number of 1,027 cm?1 to 1,087 cm?1 in the Raman spectrum, is disclosed.

Abstract: The sintered body including boron carbide, wherein the sintered body includes a zone, in which a volume ratio of grains having a grain size of greater than 30 ?m and 60 ?m or less is in a range of 50% to 70% based on a total volume of grains, as observed on a surface of the sintered body, is disclosed.

Abstract: Described is a catalyst obtained by supporting magnesium and cerium on activated alumina, firing same to immobilize the metals, and then impregnating same with palladium and performing reduction thereon, and is applied, when hydrogen peroxide is prepared by means of an anthraquinone process, to operation solution regeneration or hydrogenation, and thus an efficient regeneration conversion rate or synthesis yield is achieved.

Abstract: A double-layer structured catalyst for use in dehydrogenation of light hydrocarbon gas within a range of C3 to C6, configured such that platinum, tin, and an alkali metal are carried in a phase-changed carrier, wherein the tin component is present in an entire region inside the carrier, and the platinum and the tin form a single complex and are present in an alloy form within a range of a predetermined thickness from an outer periphery of the carrier.

Abstract: A manufacturing method of a ring-shaped element for an etcher, comprises a granulation operation comprising i) a slurry manufacturing process of preparing a slurry by mixing a raw material including boron carbide, a sinterability enhancer with a solvent; and ii) a granulation process of drying the slurry to prepare granulated raw material; a molding operation of manufacturing a green body by molding the granulated raw material; a sintering operation of carbonizing and sintering the green body to manufacture a sintered body; a shape operation of shaping the sintered body to a ring-shaped element for an etcher. The sinterability enhancer comprises one selected from the group consisting of carbon, boron oxide and combinations thereof.

Abstract: A method for fabricating a semiconductor device includes forming a first mask layer on a substrate, forming an under layer on the first mask layer, forming a first photoresist pattern that includes tin on the under layer, converting at least a part of the first photoresist pattern into a second photoresist pattern including tin fluoride, through a plasma treatment process using fluorine element, etching the under layer using the second photoresist pattern as a first mask to form an under pattern, etching the first mask layer to form a first mask pattern, and etching at least a part of the substrate, using a mask pattern including the first mask pattern as a second mask.

Abstract: Described is a catalyst for preparing hydrogen peroxide by an anthraquinone process and for regenerating a working solution and a method of preparing the catalyst. The catalyst contains palladium, magnesium, and cerium components uniformly distributed in alumina. Alternatively, the catalyst contains a palladium component distributed in a ring shape in an alumina sphere and magnesium and cerium components uniformly distributed in the alumina.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: The present disclosure relates to a dehydrogenation catalyst for use in dehydrogenation of a branched light hydrocarbon gas, the catalyst including platinum, tin, and an alkali metal which are carried in a phase-changed carrier, in which platinum and tin form a single complex and are present in an alloy form within a predetermined thickness from the outer surface of the catalyst.

Abstract: A double-layer structured catalyst for use in dehydrogenation of light hydrocarbon gas within a range of C3 to C6, configured such that platinum, tin, and an alkali metal are carried in a phase-changed carrier, wherein the tin component is present in an entire region inside the carrier, and the platinum and the tin form a single complex and are present in an alloy form within a range of a predetermined thickness from an outer periphery of the carrier.

Abstract: The present invention relates to a catalyst having improved selectivity and reactivity and applied to preparing olefins by dehydrogenating C9 to C13 paraffin, and particularly to a technique for preparing a catalyst, which uses a heat-treated support having controlled pores, and most of metal components contained therein are distributed evenly in a support in the form of an alloy rather than in the form of each separate metal, thereby exhibiting high a conversion rate and selectivity when used in dehydrogenation.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and cis amole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A non-contact shaping device includes a first fixture including a fixing section structured to alternately blow out and suck in gas. The fixing section may fix, through suction of gas, a glass plate thereon. An optic heat source processing device is selectively set above predetermined portions of the glass plate to heat, in a non-contact manner, and thus soften, in a temperature-controlled manner, the portions for curving and suspending downward along an edge of the fixing section. The curved glass plate is then lifted up through blowing gas from the first fixture. The second fixture selectively covers the curved glass plate and blow gas therefrom to flow, in collaborative combination with the gas blown from the first fixture, around surfaces of the curved glass plate for cooling and fixing a shape of the curved glass plate in a non-contact manner to form a three-dimensional curve-surfaced glass product.

Abstract: A boron carbide sintered body includes necked boron carbide-containing particles. The thermal conductivity of the boron carbide sintered body at 400° C. is 27 W/m·K or less and the ratio of the thermal conductivity of the boron carbide sintered body at 25° C. to that of the boron carbide sintered body at 800° C. is 1:0.2 to 1:3.

Abstract: A ring-shaped element for an etcher includes a body portion having an outer diameter surface connecting an outer contour of an upper surface and an outer contour of a bottom surface, and an inner diameter surface connected to an inner contour of the upper surface, and a mounting portion having an upper surface connected to the inner diameter surface of the body portion at a position lower than the upper surface of the body portion, and an inner diameter surface connecting an inner contour of the upper surface and an inner contour of a bottom surface. The upper surface of the mounting portion is stepped from the upper surface of the body portion to constitute a substrate mounting portion. The surface or entire body of the ring-shaped element includes necked boron carbide-containing particles, and the thermal conductivity of the ring-shaped element at 400° C. is 27 W/m·K or less.

Abstract: A non-contact shaping device includes a first fixture including a fixing section structured to alternately blow out and suck in gas. The fixing section may fix, through suction of gas, a glass plate thereon. An optic heat source processing device is selectively set above predetermined portions of the glass plate to heat, in a non-contact manner, and thus soften, in a temperature-controlled manner, the portions for curving and suspending downward along an edge of the fixing section. The curved glass plate is then lifted up through blowing gas from the first fixture. The second fixture selectively covers the curved glass plate and blow gas therefrom to flow, in collaborative combination with the gas blown from the first fixture, around surfaces of the curved glass plate for cooling and fixing a shape of the curved glass plate in a non-contact manner to form a three-dimensional curve-surfaced glass product.