Abstract: A stator of a brushless motor is disclosed which includes a stator core, an insulating frame arranged on the stator core, and a plurality of windings wound around the insulating frame. The stator core includes a ring-shaped yoke part and a pole part mounted to the radial inner side of the yoke part. The pole part includes a plurality of teeth spaced-apart from each other along the circumferential direction, and a ring-shaped portion arranged at and connected to the radial inner side of the teeth. The radial outer sides of the teeth abut against the radial inner side of the yoke part. The insulating frame is arranged on the pole part. A plurality of power terminals are fixed to one axial end of the insulating frame and respectively electrically connected to the windings.

Abstract: A hanging assembly includes at least one flexible hanging cable, at least one first fixing component, and a frame. The flexible hanging cable includes a power wire and a hanging wire combined with each other. The first fixing component is connected to the flexible hanging cable and adapted to be fixed at a fixed position. The frame is adapted to be fixed at the fixed position, and the at least one first fixing component is adapted to be fixed on the frame. In addition, a display apparatus applying the hanging assembly is also provided.

Abstract: A hanging assembly includes at least one flexible hanging cable, at least one first fixing component, and a frame. The flexible hanging cable includes a power wire and a hanging wire combined with each other. The first fixing component is connected to the flexible hanging cable and adapted to be fixed at a fixed position. The frame is adapted to be fixed at the fixed position, and the at least one first fixing component is adapted to be fixed on the frame. In addition, a display apparatus applying the hanging assembly is also provided.

Abstract: A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer, the p-electrode having a p-type branch electrode; a p-type ESD pad formed at the end of the p-type branch electrode, the p-type ESD pad having a larger width than the end of the p-type branch electrode; an n-electrode formed on the n-type nitride semiconductor layer, on which the active layer is not formed, the n-electrode having an n-type branch electrode; and an n-type ESD pad formed at the end of the n-type branch electrode, the n-type ESD pad having a larger width than the end of the n-type branch electrode.

Abstract: The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.

Abstract: The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.

Abstract: A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. the n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

Abstract: A GaN based LED and a method of manufacturing the same are provided. The GaN based semiconductor LED can have an improved heat dissipation capability of a sapphire substrate, thereby preventing device characteristic from being degraded by heat and improving the luminous efficiency of the device. In the GaN based LED, a sapphire substrate has at least one groove formed in a lower portion thereof. A thermally conductive layer having higher thermal conductivity than the sapphire substrate is formed on a bottom surface of the sapphire substrate to fill the groove. An n-type nitride semiconductor layer is formed on the sapphire substrate, and an active layer and a p-type nitride semiconductor layer are sequentially formed on a predetermined portion of the n-type nitride semiconductor layer. A p-electrode and an n-electrode are formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.

Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

Abstract: The present invention relates to a flip chip light emitting diode, in which the flow of current concentrated on a portion adjacent to an n-type electrode can be induced into the center of a light emitting section and a current-spreading effect is accordingly enhanced, thereby increasing light emission efficiency of a light emitting diode chip, and a method of manufacturing the same.

Abstract: The present invention relates to a GaN-based semiconductor light emitting diode and a method of manufacturing the same. The GaN-based semiconductor light emitting diode includes: a substrate; a n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent conductive layer formed on the p-type nitride semiconductor layer; an insulating layer formed on an upper center portion of the transparent conductive layer, the insulating layer having a contact hole defining a p-type contact region; a p-electrode formed on the insulating layer and electrically connected to the transparent conductive layer through the contact hole; and an n-electrode formed on the n-type nitride semiconductor layer where no active layer is formed.

Abstract: The present invention relates to a flip chip light emitting diode in which an n-type electrode is formed on an insulating layer so that a large light emitting area can be secured to thereby enhance a current-spreading effect and in which the n-type electrode serves as a light reflecting layer so that light is prevented from being transmitted into the rear surface to thereby enhance light emission efficiency.

Abstract: The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

Abstract: The present invention relates to a vertical nitride semiconductor light emitting diode. The present invention provides a vertical nitride semiconductor light emitting diode comprising a first conductive nitride semiconductor layer including an upper surface having a first electrode formed thereon; an active layer formed on a lower surface of the first conductive nitride semiconductor layer; a second conductive nitride semiconductor layer formed on a lower surface of the active layer; a highly reflective ohmic contact layer formed on the lower surface of the second conductive nitride semiconductor layer; and a metal substrate formed on the lower surface of the highly reflective ohmic contact layer. In accordance with the present invention, provided are effects such as good heat release, reduction of forward voltage, and improvement of electrostatic discharge effects. In addition, a broad light emitting area can be secured, thereby improving LED luminance.

Abstract: The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.

Abstract: Disclosed is a nitride semiconductor LED having a light emitting structure. In the light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region on a top thereof, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.