Abstract: A circuit includes a base silicon layer, a base oxide layer, a first top silicon layer, a second top silicon layer, a first semiconductor device, and a second semiconductor device. The base oxide layer is formed over the base silicon layer. The first top silicon layer is formed over a first region of the base oxide layer and has a first thickness. The second top silicon layer is formed over a second region of the base oxide layer and has a second thickness less than the first thickness. The first semiconductor device is formed over the first top silicon layer and the second semiconductor device is formed over the second top silicon layer. The ability to fabricate a top silicon layers with differing thicknesses can provide a single substrate having devices with different characteristics, such as having both fully depleted and partially depleted devices on a single substrate.

Abstract: A backlight module including a back bezel, a frame, and a backlight source is provided. The back bezel has a bottom carrier and a side wall extending upward from an edge of the bottom carrier so as to define a containing space. The side wall has a through hole and a reverse bending structure. The reverse bending structure is bent downward into the containing space for shielding a portion of the through hole. Parts of the region of the back bezel are covered with the frame and a portion of the frame extends from the containing space into the through hole and covers the reverse bending structure. The backlight source is disposed in the containing space located over the back bezel and the frame.

Abstract: A backlight module including a back bezel, a frame, and a backlight source is provided. The back bezel has a bottom carrier and a side wall extending upward from an edge of the bottom carrier so as to define a containing space. The side wall has a through hole and a reverse bending structure. The reverse bending structure is bent downward into the containing space for shielding a portion of the through hole. Parts of the region of the back bezel are covered with the frame and a portion of the frame extends from the containing space into the through hole and covers the reverse bending structure. The backlight source is disposed in the containing space located over the back bezel and the frame.