Abstract: A circuit includes a base silicon layer, a base oxide layer, a first top silicon layer, a second top silicon layer, a first semiconductor device, and a second semiconductor device. The base oxide layer is formed over the base silicon layer. The first top silicon layer is formed over a first region of the base oxide layer and has a first thickness. The second top silicon layer is formed over a second region of the base oxide layer and has a second thickness less than the first thickness. The first semiconductor device is formed over the first top silicon layer and the second semiconductor device is formed over the second top silicon layer. The ability to fabricate a top silicon layers with differing thicknesses can provide a single substrate having devices with different characteristics, such as having both fully depleted and partially depleted devices on a single substrate.

Abstract: Provided are a device and method for human parsing. The method includes receiving at least one piece of image data and ground truth values for human parsing, generating a height distribution map and a width distribution map for the image data, acquiring attention maps and scaled feature maps for each of a height and a width of the image data using the distribution maps, calculating a distribution loss rate by concatenating the scaled feature maps, acquiring an improved feature map on the basis of the calculated distribution loss rate, and performing human parsing on an object included in the image data using the improved feature map.

Abstract: A seat assembly includes a seat tube in which a seat post is movably received therein which has a clamping member with a seat disposed thereto. The seat post has two plain portions defined diametrically opposite in an outer periphery thereof and the seat tube has two wedge-shaped recesses defined diametrically opposite in an inner periphery thereof so as to receive two wedge-shaped blocks therein. The seat post extends through a nut member which is threadedly mounted to the seat tube.