Abstract: A method for continuous ethylene polymerization under high pressure using a polymerization reaction zone comprises a primary reaction zone and a secondary reaction zone wherein the secondary reaction zone has a length of 1.5-6.5 times the length of the primary reaction zone and a cross-sectional area of 1.2-4 times the cross-sectional area of the primary reaction zone. Ethylene is fed continuously into the primary reaction zone at the starting point of the primary reaction zone. Low temperature initiator alone, or an initiator mixture containing mainly low temperature initiator is introduced into the primary reaction zone at the starting point of the primary reaction zone. Initiator alone or an initiator mixture is introduced into the secondary reaction zone at two or more different points of the secondary reaction zone. Ethylene polymer products of various physical properties are produced with high productivity, while the pressure drop is minimized.

Abstract: Metal bumps for connecting a nonconducting substrate and a chip without lateral shorting are provided. In a first preferred embodiment, an insulating layer covers the entire sidewalls of all the metal bumps. In a second preferred embodiment, predetermined portions of a first metal bump and a second metal bump are covered with an insulating layer. For example, a first predetermined portion of the sidewall of the first metal bump may be zcovered with an insulating layer, while a second predetermined portion of the sidewall of the second sidewall is also covered with an insulating layer.

Abstract: Metal bumps for connecting a nonconducting substrate and a chip without lateral shorting are provided. In a first preferred embodiment, an insulating layer covers the entire sidewalls of all the metal bumps. In a second preferred embodiment, predetermined portions of a first metal bump and a second metal bump are covered with an insulating layer. For example, a first predetermined portion of the sidewall of the first metal bump may be zcovered with an insulating layer, while a second predetermined portion of the sidewall of the second sidewall is also covered with an insulating layer.

Abstract: The invention relates to a signal driving system for a display. The signal driving system comprises: a signal controller, a flexible connector and a plurality of driving devices. The signal controller is used to produce a first control signal. The flexible connector is connected to the signal controller, and used to receive the first control signal. One of the driving devices is connected to the flexible connector. The driving devices connect in cascade. Each driving device comprises a data input port, a data output port and a driving signal output port. The data input port receives the first control signal or a second control signal. The data output port outputs the second control signal. According to the first control signal or the second control signal, the driving signal output port transmits a driving signal. The signal driving system of the invention can make the data output port of the driving device transmit the second control signal to the next driving device.

Abstract: The present invention relates to a method for the prepolymerization of ?-olefin in the presence of a catalyst system which comprises (a) a magnesium supported solid complex titanium catalyst and (b) an organometallic compound of metal of Group I or III of the Periodic Table, characterized in that an inert solvent having high viscosity with molecular weight of 300 g/mole or more is used as a reaction medium.

Abstract: The present invention relates to a method for the prepolymerization of &agr;-olefin in the presence of a catalyst system which comprises (a) a magnesium supported solid complex titanium catalyst and (b) an organometallic compound of metal of Group I or III of the Periodic Table, characterized in that an inert solvent having high viscosity with molecular weight of 300 g/mole or more is used as a reaction medium.

Abstract: Metal bumps for connecting a nonconducting substrate and a chip without lateral shorting are provided. In a first preferred embodiment, an insulating layer covers the entire sidewalls of all the metal bumps. In a second preferred embodiment, predetermined portions of a first metal bump and a second metal bump are covered with an insulating layer. For example, a first predetermined portion of the sidewall of the first metal bump may be zcovered with an insulating layer, while a second predetermined portion of the sidewall of the second sidewall is also covered with an insulating layer.

Abstract: Metal bumps for connecting a nonconducting substrate and a chip without lateral shorting are provided. In a first preferred embodiment, an insulating layer covers the entire sidewalls of all the metal bumps. In a second preferred embodiment, predetermined portions of a first metal bump and a second metal bump are covered with an insulating layer. For example, a first predetermined portion of the sidewall of the first metal bump may be zcovered with an insulating layer, while a second predetermined portion of the sidewall of the second sidewall is also covered with an insulating layer.

Abstract: A LOCOS method uses a reagent mixed of etchant and oxidizer to simultaneously perform the step of forming the FOX layer and the step of removing a mask layer of the conventional LOCOS method. The applied temperature is about 950-1150° C. The etchant. such as a HF acid solution, is used to remove the mask layer, and the oxidizer, such as O2, is used to form the FOX layer on a silicon substrate.