Patents by Inventor Kun-Long Hsieh

Kun-Long Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9039881
    Abstract: The present invention provides a method for fabricating a working electrode. The method comprises the following steps: providing a photoelectrode, which comprises a conductive substrate with a semiconductor material; providing a dye solution, which comprises a dye dissolved in a solvent; and applying a voltage for conducting an electrophoresis to adsorb said dye onto a surface of said semiconductor material. The method of present invention makes the dye adsorbed fast to a surface of a semiconductor material by electrophoresis, and therefore, significantly reduces the time for fabricating a dye-sensitized solar cell.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: May 26, 2015
    Assignee: Jinex Corporation Ltd.
    Inventors: Jian-Ging Chen, Nien-Tzu Liu, Kun-Long Hsieh, Hsin-Wei Chen
  • Patent number: 8758523
    Abstract: A method of cleaning a photolithographic mask or semiconductor wafer involves mixing a gas and water in a jetspray nozzle and discharging the gas and water jetspray stream from a nozzle onto the photolithographic mask or wafer. The water jetspray stream is made up of a cluster of micro water droplets entrained in the gas having a predetermined size sufficient to dislodge contaminant particles adhered to the surface of the mask. The step of mixing the gas and water includes radially injecting the gas from a first plurality of circumferentially spaced apart gas nozzles into a stream of the water and radially injecting the gas from a second plurality of circumferentially spaced apart gas nozzles into the stream of the water, wherein the second plurality of gas nozzles are spaced above or below the first plurality of gas nozzles and radially offset from the first plurality of gas nozzles.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: June 24, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kun-Long Hsieh, Chien-Hsing Lu
  • Publication number: 20120073642
    Abstract: The present invention provides a method for fabricating a working electrode. The method comprises the following steps: providing a photoelectrode, which comprises a conductive substrate with a semiconductor material; providing a dye solution, which comprises a dye dissolved in a solvent; and applying a voltage for conducting an electrophoresis to adsorb said dye onto a surface of said semiconductor material. The method of present invention makes the dye adsorbed fast to a surface of a semiconductor material by electrophoresis, and therefore, significantly reduces the time for fabricating a dye-sensitized solar cell.
    Type: Application
    Filed: December 13, 2010
    Publication date: March 29, 2012
    Applicant: Jinex Corporation LTD.
    Inventors: Jian-Ging CHEN, Nien-Tzu Liu, Kun-Long Hsieh, Hsin-Wei Chen
  • Publication number: 20120037192
    Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals.
    Type: Application
    Filed: October 4, 2011
    Publication date: February 16, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kun-Long Hsieh, Chien-Hsing Lu
  • Patent number: 8056832
    Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jetspray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.
    Type: Grant
    Filed: October 30, 2008
    Date of Patent: November 15, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kun-Long Hsieh, Chien-Hsing Lu
  • Publication number: 20100108104
    Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jetspray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.
    Type: Application
    Filed: October 30, 2008
    Publication date: May 6, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kun-Long Hsieh, Chien-Hsing Lu