Abstract: A novel frequency tunable bi-directional phased array processing consisting of variable phase shifting and amplitude adjustment which employs a vector modulator and active combiner and splitter is proposed. Advantages of the proposed bi-directional a phased array processing includes the following 1) compact size; 2) high efficiency; 3) reduced passive trace loss and power consumption; 4) active current combining; 5) high input-output isolation; 6) high resolution and precise gain control and unequal combining or splitting; 7) phase-invariant amplifier design; 8) high accuracy and high-resolution phase shifter; 9) frequency tunability, within a small frequency range and/or a large frequency range; and 10) optimal unequal combining or splitting.

Abstract: A wideband power amplifier (PA) linearization technique is proposed. A current interpolation technique is proposed to linearize power amplifiers over a wide bandwidth. The wideband power amplifier linearization technique employs a novel transconductance Gm linearizer using a current interpolation technique that achieves improvement in the third order intermodulation over wide bandwidth for a sub-micron CMOS differential power amplifier. By using a small amount of compensating bias into an opposite phase differential pair, linearization over wide bandwidth is achieved and can be optimized by adjusting the compensating bias.

Abstract: A wideband power amplifier (PA) linearization technique is proposed. A current interpolation technique is proposed to linearize power amplifiers over a wide bandwidth. The wideband power amplifier linearization technique employs a novel transconductance Gm linearizer using a current interpolation technique that achieves improvement in the third order intermodulation over wide bandwidth for a sub-micron CMOS differential power amplifier. By using a small amount of compensating bias into an opposite phase differential pair, linearization over wide bandwidth is achieved and can be optimized by adjusting the compensating bias.

Abstract: A wideband tunable frequency single-subband converter is proposed. The wideband frequency tunable converter operates within a wideband and tunable frequency range, and has process, voltage, and temperature (PVT) tracking capability. In one embodiment, the wideband converter comprises a frequency tunable polyphase filter having a plurality of switchable polyphase resistors. The polyphase resistors are controlled by a frequency tuning control signal to achieve wideband frequency tunability. In a preferred embodiment, a triode mode transistor is used as a polyphase resistor, and a different resistance value of the polyphase filter is realized by turning on one or multiple of the different transistors in triode mode. In addition, a constant Gm(R) bias generator is used to provide the gate biases to the triode mode transistors to maintain a constant and stable resistance value across PVT and other variation.

Abstract: A wideband power amplifier (PA) linearization technique is proposed. A current interpolation technique is proposed to linearize power amplifiers over a wide bandwidth. The wideband power amplifier linearization technique employs a novel transconductance Gm linearizer using a current interpolation technique that achieves improvement in the third order intermodulation over wide bandwidth for a sub-micron CMOS differential power amplifier. By using a small amount of compensating bias into an opposite phase differential pair, linearization over wide bandwidth is achieved and can be optimized by adjusting the compensating bias.

Abstract: A novel bi-directional vector modulator to be used as an active phase shifter is proposed. The advantages of the active phase shifter include: 1) Compact size—By active current combining technique, short transmission lines are used to perform signal combining rather than using area-consuming Wilkinson combiner or splitter; 2) High phase resolution and flexibility—phase interpolation can be performed by vector addition through m-path vector modulators; 3) High efficiency—no signal switch loss, only switched matching capacitor; 4) Simplified signal interconnection; 5) No passive combiner needed—eliminate large size and losses in the passive combiner); 6) Can have unequal combining and/or splitting by changing the gain of vector modulator, which is difficult to realize with passive combining and/or splitting network; and 7) Can combine different signals.

Abstract: A wideband tunable frequency single-subband converter is proposed. The wideband frequency tunable converter operates within a wideband and tunable frequency range, and has process, voltage, and temperature (PVT) tracking capability. In one embodiment, the wideband converter comprises a frequency tunable polyphase filter having a plurality of switchable polyphase resistors. The polyphase resistors are controlled by a frequency tuning control signal to achieve wideband frequency tunability. In a preferred embodiment, a triode mode transistor is used as a polyphase resistor, and a different resistance value of the polyphase filter is realized by turning on one or multiple of the different transistors in triode mode. In addition, a constant Gm(R) bias generator is used to provide the gate biases to the triode mode transistors to maintain a constant and stable resistance value across PVT and other variation.

Abstract: A bi-directional active combiner and splitter using bi-directional variable gain amplifiers (BD_VGAs) is proposed. Advantages of the proposed bi-directional active combiner and splitter includes the following 1) compact size—for each BD_VGA, cascode transistor pair is small and the same matching network is used by the cascode transistor pair for both directions; 2) high efficiency—no switching loss in signal path, only switched matching; 3) reduced passive trace loss and power consumption—simplified signal interconnection; 4) active current combining—eliminates large size in the passive combiner; 5) high input-output isolation—cascode and neutralization; 6) precise gain control and unequal combining or splitting—changing the gain of the BD_VGA; and 7) phase-invariant amplifier design.

Abstract: A novel bi-directional vector modulator to be used as an active phase shifter is proposed. The advantages of the active phase shifter include: 1) Compact size—By active current combining technique, short transmission lines are used to perform signal combining rather than using area-consuming Wilkinson combiner or splitter; 2) High phase resolution and flexibility—phase interpolation can be performed by vector addition through m-path vector modulators; 3) High efficiency—no signal switch loss, only switched matching capacitor; 4) Simplified signal interconnection; 5) No passive combiner needed—eliminate large size and losses in the passive combiner); 6) Can have unequal combining and/or splitting by changing the gain of vector modulator, which is difficult to realize with passive combining and/or splitting network; and 7) Can combine different signals.

Abstract: A bi-directional active combiner and splitter using bi-directional variable gain amplifiers (BD_VGAs) is proposed. Advantages of the proposed bi-directional active combiner and splitter includes the following 1) compact size—for each BD_VGA, cascode transistor pair is small and the same matching network is used by the cascode transistor pair for both directions; 2) high efficiency—no switching loss in signal path, only switched matching; 3) reduced passive trace loss and power consumption—simplified signal interconnection; 4) active current combining—eliminates large size in the passive combiner; 5) high input-output isolation—cascode and neutralization; 6) precise gain control and unequal combining or splitting—changing the gain of the BD_VGA; and 7) phase-invariant amplifier design.

Abstract: A capacitive touch panel structure with high optical uniformity includes a substrate, a metal layer, an insulating layer and an electrode layer. The metal layer is formed on surface of the substrate to constitute a plurality of metal bridge patterns and a plurality of traces. The insulating layer is coated on the surfaces of the substrate, and a plurality of via holes are formed on partial surface of the metal bridge patterns. A first direction electrode pattern, without electrically connected with the metal bridge patterns, is formed on the surface of the insulating layer between the metal bridge patterns. A second direction electrode pattern covers over the partial metal bridge patterns and into the via holes.