Abstract: Methods of preparing an extract of Prickly-ash peel, including pulverizing the peels of Chinese Prickly-ash berries to produce powdered Prickly-ash peel; extracting the powdered Prickly-ash peel using an organic solvent to yield an organic extract solution; and removing the organic solvent under reduced pressure to yield a residue that is an extract of Prickly-ash peel. The resulting Prickly-ash peel extracts include the active anti-aging ingredient gx-50, having the formula which may be dispersed in a liquid or semi-solid physiologically and cosmetically acceptable vehicles or carriers to form topical anti-aging cosmetics.

Abstract: A electronic device includes a diagnosing system, a processor, a storage system, a memory, and one or more programs. The one or more programs includes a determining module, an obtaining module, a processing module, and a display module. The determining module determines whether there is a bad sector in the memory. If there is a bad sector in the memory, the determining module generates an obtaining signal. The obtaining module obtains the virtual address of the bad sector according to the obtaining signal. The processing module converts the virtual address into the corresponding physical address.

Abstract: The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity.

Abstract: The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer.

Abstract: An inline electron gun for use in a multi-beam electron gun as in a color cathode ray tube (CRT) includes a main focus lens for focusing the electron beams on the CRT's display screen for providing a video image. The main focus lens includes plural charged grids aligned in a spaced manner along the electron gun's longitudinal axis through which plural (typically three) electron beams are directed. One or more of these charged grids includes at least two aligned common apertures for passing the three electron beams. The layered common aperture arrangement allows for increasing the length of the electron gun as well as the effective diameter of the electron gun's main focus lens for improved video image resolution without introducing electron beam astigmatism.

Abstract: An inline electron gun for use in a multi-beam electron gun as in a color cathode ray tube (CRT) includes a main focus lens for focusing the electron beams on the CRT's display screen for providing a video image. The main focus lens includes plural charged grids aligned in a spaced manner along the electron gun's longitudinal axis through which plural (typically three) electron beams are directed. One or more of these charged grids includes at least two aligned common apertures for passing the three electron beams. The layered common aperture arrangement allows for increasing the length of the electron gun as well as the effective diameter of the electron gun's main focus lens for improved video image resolution without introducing electron beam astigmatism.

Abstract: The invention discloses a comb wavelength division multiplexer, comprising: an input device at input side, a polarization splitter, a &lgr;/2 phase delay wave plate; a birefringent crystal filter; and a reflective parallel light polarization splitter for reflecting an incident light beam from the birefringent crystal filter into the birefringent crystal filter again, and passing the reflected light beam through the &lgr;/2 phase delay wave plate and the polarization splitter to an output side, so that the input side and the output side are a same side. The invention uses only one-stage filter to obtain a two-stage filtering effect. The channel isolation factor is improved and the size of the apparatus is reduced (FIG. 2).

Abstract: A method of fabricating a semiconductor light-emitting device is provided in the present invention. The semiconductor light-emitting device includes a light-emitting region such as a PN-junction, or a double heterojunction, or a multiple quantum well. According to the invention, an layer consisting of an electrode material is formed overlaying a top-most layer of the semiconductor light-emitting device. Afterwards, an annealing process is performed to the resultant structure so that the electrode material diffuses into the top-most layer. Subsequently, the layer consisting of the electrode material is etched partially to formed an upper electrode on the top-most layer and to expose part of the top-most layer. Substantially, the exposed part of the top-most layer exhibits a rough morphology. Thereby, the external quantum efficiency of the semiconductor light-emitting device is enhanced. The method can be implemented regardless of material and lattice orientation of the top-most layer.

Abstract: In a multi-stage, multi-beam electron gun of the common lens type for use in a color cathode ray tube (CRT), a charged grid in the prefocus lens of the electron gun is provided with three inline asymmetric beam passing apertures. The three asymmetric apertures may be either in the G4 grid, in the upper side of the G3 grid, or on the lower side of the G5 grid, i.e., in facing relation to the G4 grid, or may be incorporated in both the G3 and G5 grids. The small G3-G4 and G4-G5 spacing gives rise to isolation of the electron optic lenses of the two outer electron beams from that of the center electron beam allowing the asymmetric auxiliary apertures to asymmetrically and independently correct for electron beam astigmatism, i.e., the difference between the beam's horizontal and vertical focus voltage, and differences in the focus voltages of the two outer electron beams relative to the center electron beam.