Abstract: A method includes removing a first dummy gate structure to form a recess around a first nanostructure and a second nanostructure; depositing a sacrificial layer in the recess with a flowable chemical vapor deposition (CVD); and patterning the sacrificial layer to leave a portion of the sacrificial layer between the first nanostructure and the second nanostructure. The method further include depositing a first work function metal in first recess; removing the first work function metal and the portion of the sacrificial layer from the recess; depositing a second work function metal in the recess, wherein the second work function metal is of an opposite type than the first work function metal; and depositing a fill metal over the second work function metal in the recess.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Abstract: A fan has a fan frame for accommodating a first circuit board and a second circuit board. A fan frame includes a housing, a base, and at least one supporting element. The base is disposed in the housing, and the base includes a bottom portion and a tube portion, which is connected to and extended from the bottom portion. The supporting element is connected between the housing and the base. There is a predetermined distance between the bottom portion of the base and an end of the housing so as to form an accommodating space, the first circuit board is disposed on the base and is located on a first side of the bottom portion facing the tube portion, and the second circuit board is disposed in the accommodating space which is located on a second side of the bottom portion facing away from the tube portion.

Abstract: A fan includes an impeller and a fan frame. The impeller is accommodated within the fan frame. The impeller has a hub and a plurality of blades disposed around the hub. The hub has a top portion and a side wall connected with the top portion. The hub further has a plurality of flexible portions disposed and located on the side wall. The blades are connected with the flexible portions, respectively, so that the blades are connected to the hub.

Abstract: A connection structure is applied to a serial fan assembly, which includes an upstream fan and a downstream fan. The upstream fan and the downstream fan have different sizes. The connection structure connects the upstream fan and the downstream fan so that the upstream fan and the downstream fan are arranged in series. The connection structure has a housing, a base and a plurality of ribs for connecting the base, and the housing is formed with an air guiding passage and a chamber. The upstream fan or the downstream fan is accommodated in the chamber or the air guiding passage is located between the upstream fan and the downstream fan.

Abstract: A fan includes an impeller and a fan frame. The impeller is accommodated within the fan frame. The impeller has a hub and a plurality of blades disposed around the hub. The hub has a top portion and a side wall connected with the top portion. The hub further has a plurality of flexible portions disposed and located on the side wall. The blades are connected with the flexible portions, respectively, so that the blades are connected to the hub.

Abstract: A connection structure is applied to a serial fan assembly, which includes an upstream fan and a downstream fan. The upstream fan and the downstream fan have different sizes. The connection structure connects the upstream fan and the downstream fan so that the upstream fan and the downstream fan are arranged in series. The connection structure has a housing, a base and a plurality of ribs for connecting the base, and the housing is formed with an air guiding passage and a chamber. The upstream fan or the downstream fan is accommodated in the chamber or the air guiding passage is located between the upstream fan and the downstream fan.

Abstract: A fan includes an impeller, a motor, and a fan frame. The motor is connected to the impeller and for driving the impeller to rotate. The fan frame is for accommodating the impeller and the motor and the fan frame includes a housing, a motor base and a plurality of supporting elements. The housing has an air outlet. The motor base is disposed at the central region of the housing, and has an airflow-guiding portion located in the vicinity of the air outlet. The supporting elements are connected between the housing and the motor base.

Abstract: A fan has a fan frame for accommodating a first circuit board and a second circuit board. A fan frame includes a housing, a base, and at least one supporting element. The base is disposed in the housing, and the base includes a bottom portion and a tube portion, which is connected to and extended from the bottom portion. The supporting element is connected between the housing and the base. There is a predetermined distance between the bottom portion of the base and an end of the housing so as to form an accommodating space, the first circuit board is disposed on the base and is located on a first side of the bottom portion facing the tube portion, and the second circuit board is disposed in the accommodating space which is located on a second side of the bottom portion facing away from the tube portion.

Abstract: A fluid jet head with driving circuit of a heater set. A first and a second primary transistor are coupled to a first and a second heater. When the first primary transistor is turned on under control of a first control voltage and a first current is generated flowing through the first heater, the first primary transistor, and the first current path, then the first primary transistor has a first primary equivalent resistance corresponding to the first control voltage. When the second primary transistor is turned on under control of a second control voltage, and a second current is generated flowing through the second heater, the second primary transistor, and a second current path, then the second primary transistor has a second primary equivalent resistance corresponding to the second control voltage. Therefore, the thermal energy generated by the first heater is substantially equal to that generated by the second heater.

Abstract: A fluid jet head with driving circuit of a heater set. A first and a second primary transistor are coupled to a first and a second heater. When the first primary transistor is turned on under control of a first control voltage and a first current is generated flowing through the first heater, the first primary transistor, and the first current path, then the first primary transistor has a first primary equivalent resistance corresponding to the first control voltage. When the second primary transistor is turned on under control of a second control voltage, and a second current is generated flowing through the second heater, the second primary transistor, and a second current path, then the second primary transistor has a second primary equivalent resistance corresponding to the second control voltage. Therefore, the thermal energy generated by the first heater is substantially equal to that generated by the second heater.

Abstract: An apparatus for driving an address electrode of a plasma display panel and the driving method thereof. The driving apparatus comprises a first switch coupled to the power source and the first node respectively, a first diode coupled in parallel to the first switch, a first capacitor coupled in parallel to the first switch, a second switch coupled to the first node and a ground node respectively, a second diode coupled in parallel to the second switch, a second capacitor coupled in parallel to the second switch, a third capacitor coupled to the signal control circuit in the first node, and a first inductance coupled to the third capacitor and a second node respectively.

Abstract: An apparatus for driving an address electrode of a plasma display panel and the driving method thereof. The driving apparatus comprises a first switch coupled to the power source and the first node respectively, a first diode coupled in parallel to the first switch, a first capacitor coupled in parallel to the first switch, a second switch coupled to the first node and a ground node respectively, a second diode coupled in parallel to the second switch, a second capacitor coupled in parallel to the second switch, a third capacitor coupled to the signal control circuit in the first node, and a first inductance coupled to the third capacitor and a second node respectively.

Abstract: The state machine with hysteresis provided in the invention includes a current state circuit and a next state control circuit. The current state circuit, in response to a clock signal and a control signal, generates a current state signal and a frequency detection signal. The current state signal has a plurality of bits. The next state control circuit, in response to the current state signal and the input signal, generates the control signal. A hysteresis is observed with regard to the relation of the frequency detection signal with respect to the frequency of the input signal.

Abstract: An interface control circuit comprising a buffer, an inverter, an OR gate and delay means. The interface control circuit can be utilized in digital systems for communication handshaking such that a buffer output current will actively flow through line stray capacitance thereby greatly reducing the rise time from a LOW state to a HIGH state, or charges in the line stray capacitance will actively discharge through the buffer means if negative logic mode is used thereby enabling a great reduction in fall time, therefore a much faster and efficient digital system can be obtained through the use of the invention.