Patents by Inventor Kun-Mou Chan

Kun-Mou Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9536887
    Abstract: A process for fabricating a gate structure, the gate structure having a plurality of gates defined by a network of spaces. The word line (WL) spaces within a dense WL region having airgaps and those spaces outside of the dense WL being substantially free of airgaps. A gate structure having a silicide layer dispose across the plurality of gates is also provided.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: January 3, 2017
    Assignee: Macronix International Co., Ltd.
    Inventors: Yu-Fong Huang, Kun-Mou Chan, Tzung-Ting Han
  • Publication number: 20150035068
    Abstract: A process for fabricating a gate structure, the gate structure having a plurality of gates defined by a network of spaces. The word line (WL) spaces within a dense WL region having airgaps and those spaces outside of the dense WL being substantially free of airgaps. A gate structure having a silicide layer dispose across the plurality of gates is also provided.
    Type: Application
    Filed: October 21, 2014
    Publication date: February 5, 2015
    Inventors: Yu-Fong HUANG, Kun-Mou CHAN, Tzung-Ting HAN
  • Patent number: 8890254
    Abstract: A process for fabricating a gate structure, the gate structure having a plurality of gates defined by a network of spaces. The word line (WL) spaces within a dense WL region having airgaps and those spaces outside of the dense WL being substantially free of airgaps. A gate structure having a silicide layer dispose across the plurality of gates is also provided.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: November 18, 2014
    Assignee: Macronix International Co., Ltd.
    Inventors: Yu-Fong Huang, Kun-Mou Chan, Tzung-Ting Han
  • Publication number: 20140077304
    Abstract: A process for fabricating a gate structure, the gate structure having a plurality of gates defined by a network of spaces. The word line (WL) spaces within a dense WL region having airgaps and those spaces outside of the dense WL being substantially free of airgaps. A gate structure having a silicide layer dispose across the plurality of gates is also provided.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Yu-Fong Huang, Kun-Mou Chan, Tzung-Ting Han