Abstract: Disclosed is a bolting torque determination method which includes a preparation process of preparing samples of an object and samples of a bolt, a sample fracture torque acquisition process of measuring and acquiring a sample fracture torque, an effective fastening torque zone determination process of determining an effective fastening torque zone, in which fastening is performed without fracture, a bolt fastening angle measurement process of performing test fastening on the samples according to each of the plurality of selected experimental torques and measuring bolt fastening angles, and a bolting torque determination process of determining a bolting torque, whereby a rotation angle of each of the sample bolts is measured from a predetermined reference point of time to a point of time when the test fastening is finished.

Abstract: Provided herein may be a memory device and a method of operating the same. The memory device may include a memory cell string including a plurality of memory cells coupled to a plurality of word lines, a peripheral circuit configured to perform an operation that applies an operating voltage to a selected word line and applying a pass voltage to unselected word lines, among the plurality of word lines, and an operation controller configured to control the peripheral circuit to perform, after the operation has been performed, a discharge operation that sequentially decreases voltages of the plurality of word lines that range from at least one central word line located in a central portion in relation to the memory cell string to a word line, among the plurality of word lines, located in an outermost portion in relation to the memory cell string, adjacent to a select line.

Abstract: Discussed is a welding rod inspection apparatus for measuring whether a welding rod is deformed and an inspection method using the same, and more particularly a welding rod inspection apparatus including a plurality of measures configured to be brought into contact with a predetermined position of a lower end of the welding rod and a support die configured to support the plurality of measurers. The plurality of measurers can be located so as to be spaced apart from each other by a predetermined distance, and each of the plurality of measurers or the support die can be provided with a pressure sensor configured to measure a pressure applied to the plurality of measurers. An inspection method using the plurality of measurers is also discussed.

Abstract: Discussed is a flexible printed circuit board bending apparatus for battery cells, the flexible printed circuit board bending apparatus including: a die comprising a horizontal body and a support wall configured to receive a battery cell having a flexible printed circuit board exposed outwards from one side of the battery cell; a bending guide unit located at one side of the die; and a bending unit located at the one side of the die, wherein the bending unit comprises: a stationary body; a turning body connected to the stationary body, the turning body being configured to be turnable by a predetermined first angle; and a board seating portion connected to the turning body, the board seating portion having a board seating groove formed therein, and being configured to receive the flexible printed circuit board.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: A method of manufacturing a semiconductor device may include forming a polishing stop layer on a substrate, forming a stack on the polishing stop layer, forming channel structures extending through the stack and the polishing stop layer and having different heights, polishing the substrate and the channel structures to expose the polishing stop layer, and removing the polishing stop layer.

Abstract: A semiconductor memory device may include a second conductive type first well, a second conductive type third well, a first conductive type second well, a floating gate and a selection gate. The first well may include a first active region. The third well may include a third active region. The second well may be arranged between the first well and the third well. The second well may include a second active region. The floating gate may be overlapped with the first active region, the second active region and the third active region. The selection gate may be overlapped with the second active region. The selection gate and the floating gate may be arranged side by side. A second overlap area between the second active region and the floating gate may be larger than a third overlap area between the third active region and the floating gate.

Abstract: An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.

Abstract: A non-volatile memory device may include a substrate, a first floating gate, a second floating gate, a third floating gate and a fourth floating gate. The substrate may include an active region. The first to fourth floating gates may be formed on the substrate. The first to fourth floating gates may be radially arranged to be partially overlapped with the active region. The first floating gate and the third floating gate may face each other in a first direction. The first floating gate and the third floating gate may have asymmetrically planar shapes. The first floating gate and the second floating gate may face each other in a second direction substantially perpendicular to the first direction. The first floating gate and the second floating gate may have asymmetrically planar shapes. The third floating gate and the fourth floating gate may face each other in the second direction. The third floating gate and the fourth floating gate may have asymmetrically planar shapes.

Abstract: Provided is a pressure control device for a liquid hydrogen tank for a hydrogen fuel cell vehicle that includes a fuel cell, a battery, and a drive motor, wherein the liquid hydrogen tank includes a vacuum chamber, an inner chamber inside the vacuum chamber and storing liquid hydrogen therein, and a multi-layered insulation surrounding the inner chamber. The pressure control device includes a liquid hydrogen pump inside a liquid hydrogen section, an expansion valve located downstream of the liquid hydrogen pump, a heat exchanger located downstream of the expansion valve, a first flow path through which liquid hydrogen supplied from the liquid hydrogen pump passes through the heat exchanger and is sprayed into a gaseous hydrogen section, and a second flow path through which the liquid hydrogen supplied from the liquid hydrogen pump sequentially passes through the expansion valve and the heat exchanger and flows.

Abstract: A launch pad system includes a fuel vent port provided in a launch vehicle, a launch pad fuel tank provided outside the launch vehicle to store fuel, a fuel recovery line connecting the fuel vent port and the launch pad fuel tank such that the fuel is transferred therethrough, and a fuel transfer unit provided on the fuel recovery line to transfer the fuel, wherein the fuel may be recovered from the launch vehicle to the launch pad fuel tank.

Abstract: The flow rate control device includes a main plate corresponding to an inner diameter and including a through hole which is formed at the center thereof and through which a fluid flows, a sub-plate corresponding to a size of the through hole, disposed in front of the main plate, and applied with a pressure of the flowing fluid, and an expansion and contraction flow path formed to connect the through hole and a circumference of the sub-plate to each other and expanded and contracted by the pressure applied to the sub-plate. The expansion and contraction flow path includes a plurality of holes which are formed in a side surface thereof and through which the flow flows, and has a cross-sectional area changed by the pressure to control a flow rate.

Abstract: According to an embodiment, an image display device includes: a display; a memory storing one or more instructions; and a processor executing the one or more instructions stored in the memory, wherein the processor executes the one or more instructions: to determine whether it is a recommended time for outputting advertisement content, from a user's log data, based on a first trained model using one or more neural networks; to determine a recommended attribute of an advertisement display region from the user's log data, based on a second trained model using the one or more neural networks, when it is determined that it is the recommended time for outputting the advertisement content; and to adjust an attribute of the advertisement display region based on the determined recommended attribute and control the display to output the advertisement content in the attribute-adjusted advertisement display region.

Abstract: A non-volatile memory device may include a substrate, a first floating gate, a second floating gate, a third floating gate and a fourth floating gate. The substrate may include an active region. The first to fourth floating gates may be formed on the substrate. The first to fourth floating gates may be radially arranged to be partially overlapped with the active region. The first floating gate and the third floating gate may face each other in a first direction. The first floating gate and the third floating gate may have asymmetrically planar shapes. The first floating gate and the second floating gate may face each other in a second direction substantially perpendicular to the first direction. The first floating gate and the second floating gate may have asymmetrically planar shapes. The third floating gate and the fourth floating gate may face each other in the second direction. The third floating gate and the fourth floating gate may have asymmetrically planar shapes.

Abstract: An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.

Abstract: Memory devices are disclosed. In an embodiment of the disclosed technology, a memory device may include a substrate including an active region, and a first floating gate, a second floating gate, a third floating gate and a fourth floating gate formed on the substrate, arranged to partially overlap with the active region. The first floating gate and the third floating gate are arranged in a first direction at one side of the active region and asymmetrical about a center of the active region, and the second floating gate and the fourth floating gate are arranged in the first direction at another side of the active region and asymmetrical about the center of the active region.

Abstract: Provided herein may be a memory device and a method of operating the same. The memory device may include a memory cell string including a plurality of memory cells coupled to a plurality of word lines, a peripheral circuit configured to perform an operation that applies an operating voltage to a selected word line and applying a pass voltage to unselected word lines, among the plurality of word lines, and an operation controller configured to control the peripheral circuit to perform, after the operation has been performed, a discharge operation that sequentially decreases voltages of the plurality of word lines that range from at least one central word line located in a central portion in relation to the memory cell string to a word line, among the plurality of word lines, located in an outermost portion in relation to the memory cell string, adjacent to a select line.

Abstract: Discussed are a metal plate for resistance welding and a resistance welding method using the same, wherein the metal plate is for being resistance-welded to an electrode terminal of a cylindrical battery, and the metal plate includes a body; and a pair of protrusion units located spaced apart from each other by a predetermined distance, the pair of protrusion unit being provided at one side surface of the body, and a slit is formed between the pair of protrusion units.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: Discussed is a bolting device including an operation part disposed on a table; a jig disposed on the table to contact an object to be bolted in which a bolt hole is defined, the jig including a through-hole for guiding a bolt to the bolt hole; a guide inserted to the through-hole, the guide having a hollow shape to accommodate the bolt therein, the guide having an inclined inner surface with a shape having an internal diameter that gradually decreases in a downward direction to maintain verticality of the bolt, and the guide further having a portion cut in a movement direction of the bolt so that the inner surface is elastically opened when the bolt is moved downward; and an elastic part in contact with an outer circumferential surface of the guide to elastically support a surrounding portion of a cut portion of the guide.