Abstract: A method of repairing defect in a superconducting film, a method of coating a superconducting film, and a superconducting film formed by the method are prepared. The method of repairing defect includes detecting the superconducting film during a manufacturing process thereof. When a defect therein is detected, a repairing structure with superconductivity is formed on a position of the defect.

Abstract: A screen printing film and a surface modification method of the same are provided. The method includes providing a substrate having a PVA film on at least one surface of the substrate. The surface of the substrate is modified by generating a heating source and a plasma source, wherein a heating temperature to the substrate is between 100° C. and 500° C. The step of generating the heating source may be prior to, after, or simultaneous with the step of generating the plasma source.

Abstract: Disclosed is a method of forming a graphene layer, including: putting a substrate in a chamber of an electron cyclotron resonance device, and then evacuating the chamber. Conducting a carbon-containing gas into the chamber, wherein the carbon-containing gas has a pressure of 10?2 torr to 10?4 torr in the chamber. Heating the substrate until the substrate has a temperature of 100° C. to 600° C., and using a microwave with an electron cyclotron resonance mechanism to excite the carbon-containing gas to deposit a graphene layer on the substrate.

Abstract: A method of joining superconductor materials is described. A microwave chamber including a first heat absorption plate and a second heat absorption plate corresponding to the first absorption plate is provided. A first superconductor material and a second superconductor material are disposed between the first heat absorption plate and the second heat absorption plate in the microwave chamber. The first superconductor material and the second superconductor material have an overlapping region therebetween, and a pressure is applied to the first heat absorption plate and the second heat absorption plate. Microwave power is supplied to the microwave chamber. The first heat absorption plate and the second heat absorption plate transform the microwave power into thermal energy so as to join the first superconductor material and the second superconductor material at the overlapping region.

Abstract: Disclosed is an apparatus for manufacturing graphene sheets. The apparatus includes a gas tube, and a hydrocarbon gas source connected to a front part of the gas tube for providing a hydrocarbon gas through the gas tube. The apparatus also includes a microwave generator to generate a microwave passing a middle part of the gas tube through a waveguide tube to form a microwave plasma torch from the hydrocarbon gas, wherein the hydrocarbon gas is cracked by the microwave plasma torch to form graphene sheets. The apparatus includes a tube collector connected to a back part of the gas tube for collecting the graphene sheets.

Abstract: A quantum dot thin film solar cell is provided, which at least includes a first electrode layer, an optical active layer, and a second electrode layer sequentially deposited on a substrate. A plurality of quantum dots is formed in the optical active layer. Since the plurality of quantum dots and the optical active layer are formed through co-sputtering, an interface adhesion between the plurality of quantum dots and the optical active layer is good in this quantum dot thin film solar cell.

Abstract: A microwave-excited plasma device is proposed. The device comprises of a plurality of microwave plasma reaction units which are capable of generating plasma independently such that a large-area plasma is able to be generated by all of the units. Besides, the high cost of the large-area microwave coupling window and its deformation together with possible breakage caused by atmospheric pressure can be prevented. Moreover, when a plurality of permanent magnets is assembled upon each of the plasma reaction units, the microwave-excited plasma device is improved to be a large-area electron cyclotron resonance (ECR) plasma device.

Abstract: Disclosed is a method of forming a graphene layer, including: putting a substrate in a chamber of an electron cyclotron resonance device, and then vacuuming the chamber. Conducting a carbon-containing gas into the chamber, wherein the carbon-containing gas has a pressure of 10?2 torr to 10?4 torr in the chamber. Heating the substrate until the substrate has a temperature of 100° C. to 600° C., and using a microwave with an electron cyclotron resonance mechanism to excite the carbon-containing gas to deposit a graphene layer on the substrate.

Abstract: Disclosed is a method of forming graphene. A graphite positive electrode (or positive electrode together with graphite material) wrapped in a semipermeable membrane and a negative electrode are dipped in an acidic electrolyte to conduct an electrolysis process. As such, a first graphene oxide having a size larger than a pore size of the semipermeable membrane is exfoliated from the graphite positive electrode (or the graphite material). The electrolysis process is continuously conducted until a second graphene oxide is exfoliated from the first graphene oxide, wherein the second graphene oxide has a size which is smaller than the pore size of the semipermeable membrane to penetrate through the semipermeable membrane. The second graphene oxide diffused into the acidic electrolyte outside of the semipermeable membrane is collected. Finally, the collected second graphene oxide is chemically reduced to obtain a graphene.

Abstract: A method of joining superconductor materials is described. A microwave chamber including a first heat absorption plate and a second heat absorption plate corresponding to the first absorption plate is provided. A first superconductor material and a second superconductor material are disposed between the first heat absorption plate and the second heat absorption plate in the microwave chamber. The first superconductor material and the second superconductor material have an overlapping region therebetween, and a pressure is applied to the first heat absorption plate and the second heat absorption plate. Microwave power is supplied to the microwave chamber. The first heat absorption plate and the second heat absorption plate transform the microwave power into thermal energy so as to join the first superconductor material and the second superconductor material at the overlapping region.

Abstract: The disclosure provides a zinc oxide anti-reflection layer having a syringe-like structure and method for fabricating the same. The zinc oxide anti-reflection layer includes: a zinc oxide lower portion, wherein the zinc oxide lower portion has a nanorod array structure; and a zinc oxide upper portion connected to the zinc oxide lower portion, wherein the zinc oxide anti-reflection layer has a syringe-like structure.

Abstract: A microwave-excited plasma device is proposed. The device comprises of a plurality of microwave plasma reaction units which are capable of generating plasma independently such that a large-area plasma is able to be generated by all of the units. Besides, the high cost of the large-area microwave coupling window and its deformation together with possible breakage caused by atmospheric pressure can be prevented. Moreover, when a plurality of permanent magnets is assembled upon each of the plasma reaction units, the microwave-excited plasma device is improved to be a large-area electron cyclotron resonance (ECR) plasma device.

Abstract: The present invention provides a magnetic module for electron cyclotron resonance (ECR) and ECR apparatus using the magnetic module, wherein the magnetic module comprises a plurality of layers of supporting ring and a plurality of magnetic pillars. Each of the supporting rings has an outer surface and an inner surface and has a plurality of through holes radially disposed inside the supporting ring. The plurality of pillars are respectively embedded into the plurality of through holes of each supporting ring and magnetic fields of the magnetic pillars in each two adjacent supporting ring are respectively opposite to each other. The ECR apparatus of the present invention is capable of being operated under lower pressure environment for forming a single atom layer on a substrate.

Abstract: A method and an apparatus for sputtering a film containing high vapor pressure material are provided. The apparatus includes a chamber, a sputtering gun installed in the chamber, a complex target disposed on the sputtering gun, and a substrate holder. The complex target includes a main target and a plurality of pellets, and a material of the pellets is at least one high vapor pressure material that is a material with a vapor pressure greater than 1×10?9 ton at 1000° C. The substrate holder is installed in the chamber opposite to the complex target.

Abstract: A quantum dot dye-sensitized solar cell (QDDSSC) including an anode, a cathode, and an electrolyte between the anode and the cathode is provided. The anode includes a semiconductor electrode layer adsorbed with a dye, a plurality of quantum dots distributed within the semiconductor electrode layer, and a plurality of metal nanoparticles distributed within the semiconductor electrode layer. Because the absorption spectra of the quantum dots, the dye, and the semiconductor electrode layer cover the infrared (IR), visible, and ultraviolet (UV) regions of the solar spectrum, IR to UV light in the solar spectrum can be effectively absorbed, and accordingly the conversion efficiency of the solar cell can be improved. Moreover, the metal nanoparticles can increase the light utilization efficiency.

Abstract: A quantum dot thin film solar cell is provided, which at least includes a first electrode layer, an optical active layer, and a second electrode layer sequentially deposited on a substrate. A plurality of quantum dots is formed in the optical active layer. Since the plurality of quantum dots and the optical active layer are formed through co-sputtering, an interface adhesion between the plurality of quantum dots and the optical active layer is good in this quantum dot thin film solar cell.