Abstract: Example memory devices, memory systems, and methods for identifying zero pages in a memory device are disclosed. In one example, a method of operating a memory device includes performing, based on a first read voltage, a read operation on memory cells coupled to a word line of the memory device; determining a quantity of failed memory cells, the failed memory cells being memory cells having threshold voltages lower than the first read voltage; and in response to determining that the quantity of the failed memory cells is less than a threshold, ending the read operation.

Abstract: Methods, devices, and systems for managing memory devices are provided. In one aspect, a memory system can include a memory device including memory pages, a memory controller coupled to the memory device. The memory controller is configured to send, to the memory device, a first command indicating to identify dummy data, and in response to receiving, from the memory device, a response indicating that a first memory page is a zero page, determine data comprised in the first memory page as dummy data.

Abstract: The embodiment of the present disclosure provides a memory controller, device, system, and method. The memory controller includes an interface and a processor, wherein the processor is configured to: obtain a statistical result of a physical page corresponding to a first read voltage, wherein the statistical result includes at least one of a first number of bits flipped in two read results of the physical page corresponding to the first read voltage and a read voltage whose voltage difference with the first read voltage is less than a preset voltage, or a second number of bits of the physical page not successfully read using the first read voltage; the first read voltage is less than a mean value of a threshold voltage interval corresponding to an intermediate storage state of the physical page; and determine a read disturb state of the physical page according to the statistical result.

Abstract: Memory controllers, devices, systems, operating methods thereof, and storage media are provided. In one aspect, a memory controller includes a processor configured to: obtains a statistical result of a physical page corresponding to a first read voltage. The statistical result includes at least one of a first number of bits flipped between two read results of the physical page corresponding to the first read voltage and a read voltage having a voltage difference of less than a preset voltage with the first read voltage, or a second number of bits of the physical page successfully read using the first read voltage. The first read voltage is greater than a mean value of a threshold voltage interval corresponding to an intermediate storage state of the physical page. The process is further configured to determine a data retention state of the physical page according to the statistical result.

Abstract: A global transaction system receives a transaction request for a plurality of database services of microservices. The global transaction system receives a plurality of local commit decisions of local commit requests from local transaction managers of the database services of the microservices. The local commit request corresponds to the transaction request for each database. The global transaction system generates a physical commit request to each of the local transaction managers based on the local commit decisions and a global commit decision. Each local transaction manager submits the physical commit request to each database server of the database services corresponding to the transaction request.

Abstract: A global transaction system receives a transaction request for a plurality of database services of microservices. The global transaction system receives a plurality of local commit decisions of local commit requests from local transaction managers of the database services of the microservices. The local commit request corresponds to the transaction request for each database. The global transaction system generates a physical commit request to each of the local transaction managers based on the local commit decisions and a global commit decision. Each local transaction manager submits the physical commit request to each database server of the database services corresponding to the transaction request.

Abstract: An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100?x?y, where 0<x<80 and 0<y<100?x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb—Te—Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb—Te—Ti phase-change memory material has wide application in phase-change memories.

Abstract: A phase change memory cell and a preparation method thereof. A phase change material layer having a thickness equal to the size of a single unit cell or a plurality of unit cells is adopted, the phase change material layer fundamentally expresses interfacial characteristics, and body material characteristics are weakened, such that a two-dimensional phase change memory cell storing information through change of interface resistance and having a high density, low power consumption and high speed is prepared.

Abstract: The present invention provides a phase-change storage unit for replacing DRAM and FLASH and a manufacturing method thereof, and the phase-change storage unit includes a phase-change material layer and a cylindrical lower electrode being in contact with and located below the phase-change material layer, where the phase-change material layer is formed by connecting a side wall layer and a round bottom layer, forms a hollow cylinder or hollow inverted conical frustum having an opening at an upper part, and the hollow cylinder or hollow inverted conical frustum is internally filled with a medium layer.

Abstract: An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100?x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb—Te—Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb—Te—Ti phase-change memory material has wide application in phase-change memories.

Abstract: The present invention provides a phase-change storage unit for replacing DRAM and FLASH and a manufacturing method thereof, and the phase-change storage unit includes a phase-change material layer and a cylindrical lower electrode being in contact with and located below the phase-change material layer, where the phase-change material layer is formed by connecting a side wall layer and a round bottom layer, forms a hollow cylinder or hollow inverted conical frustum having an opening at an upper part, and the hollow cylinder or hollow inverted conical frustum is internally filled with a medium layer.

Abstract: The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100-x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. In a crystallization process of an Sb—Te phase-change material in the prior art, gain growth dominates, so the phase change rate is high, but the retention cannot meet industrial requirements.