Patents by Inventor Kun Su

Kun Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11981851
    Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
    Type: Grant
    Filed: November 11, 2022
    Date of Patent: May 14, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang, Yong Seok Han, Heejae Chung
  • Publication number: 20240132904
    Abstract: The present invention relates to a method for producing recombinant human prethrombin-2 protein and having human ?-thrombin activity by the plant-based expression systems.
    Type: Application
    Filed: October 16, 2023
    Publication date: April 25, 2024
    Applicant: PROVIEW-MBD BIOTECH CO., LTD.
    Inventors: Yu-Chia CHANG, Jer-Cheng KUO, Ruey-Chih SU, Li-Kun HUANG, Ya-Yun LIAO, Ching-I LEE, Shao-Kang HUNG
  • Publication number: 20240117451
    Abstract: Positive reference spiked in collected sample for use in qualitatively and quantitatively detecting viral RNA.
    Type: Application
    Filed: March 10, 2021
    Publication date: April 11, 2024
    Inventors: Shuwei YANG, Liancheng HUANG, Feifei FENG, Longwen SU, Kun LIN, Can TANG, Chen LIANG, Yuanmei WANG, Yanqing CAI, Yilin PANG, Chuan SHEN, Zhixue YU
  • Patent number: 11957046
    Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: April 9, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Gyu Han, Dae Young Chung, Kwanghee Kim, Eun Joo Jang, Chan Su Kim, Kun Su Park, Won Sik Yoon
  • Patent number: 11935984
    Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: March 19, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Seok Han, Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang
  • Patent number: 11925043
    Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: March 5, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Gyu Han, Heejae Lee, Eun Joo Jang, Tae Ho Kim, Kun Su Park, Won Sik Yoon, Hyo Sook Jang
  • Publication number: 20240070835
    Abstract: A system of automatic optimization of image quality of an image sensor includes an image learning data generation unit generating an image tuning knowledge database, which includes pairs of a plurality of sets of values of a plurality of parameters and a plurality of sets of image quality evaluation scores for a plurality of image quality evaluation items for evaluating a quality of each of a plurality of images generated by the image sensor, using an image tuning database sampling module, an image signal processor modeling unit generating a machine learning model, for each image, for automatically optimizing the quality of each image, and an image sensor image quality optimization unit automatically controlling values of some of the plurality of parameters based on a user's image quality selection and the machine learning model. The image quality evaluation scores are produced by a distributed camera simulation system including servers.
    Type: Application
    Filed: June 22, 2023
    Publication date: February 29, 2024
    Inventors: Young Hoon KIM, Kun Dong KIM, Sung Su KIM, Jin Hyun KIM, Da Gyeom HONG
  • Patent number: 11910629
    Abstract: A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.
    Type: Grant
    Filed: December 7, 2022
    Date of Patent: February 20, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan Su Kim, Kun Su Park, Tae Ho Kim, Eun Joo Jang, Dae Young Chung
  • Patent number: 11871594
    Abstract: An electroluminescent device and a display device including the electroluminescent device. The electroluminescent device includes a first electrode and a second electrode each having a surface opposite the other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including quantum dots; and an electron transport layer disposed between the light emitting layer and the second electrode, the electron transport layer including inorganic material nanoparticles including an anion dopant including P, N, C, Cl, F, Br, S, or a combination thereof.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: January 9, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung woo Kim, Moon Gyu Han, Eun joo Jang, Kun su Park
  • Publication number: 20230347209
    Abstract: The present invention is to provide a device for sensing golf swing and a method for sensing an impact position on club head using two cameras operated in a stereoscopic manner with each other in the sensing device to accurately calculate the position where the golf ball is impacted on the head-face of the golf club when hitting the golf ball.
    Type: Application
    Filed: September 13, 2021
    Publication date: November 2, 2023
    Applicant: GOLFZON CO., LTD.
    Inventors: Kun Su OH, Jae Sun LEE
  • Patent number: 11765918
    Abstract: A light emitting device includes an emission layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the emission layer, the electron auxiliary layer to transport electrons to the emission layer, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles, wherein the metal oxide nanoparticles include zinc and a dopant metal, wherein the dopant metal includes Mg, Mn, Ni, Sn, Al, Y, Ga, Zr, Ni, Li, Co, or a combination thereof, wherein the dopant metal in at least one of the metal oxide nanoparticles is included in the metal oxide nanoparticle to have a concentration gradient of the dopant metal.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: September 19, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kun Su Park, Chan Su Kim, Kwanghee Kim, Eun Joo Jang
  • Patent number: 11725141
    Abstract: Quantum dots and electroluminescent device including the same. The quantum dots include an alloy core including a first semiconductor nanocrystal including indium (In), gallium (Ga), and phosphorous (P), and a semiconductor nanocrystal shell disposed on the alloy core, wherein the quantum dots do not include cadmium, wherein the quantum dots are configured to emit blue light having a maximum emission peak wavelength that is greater than or equal to about 440 nanometers (nm) and less than or equal to about 490 nm, wherein in the quantum dots, a mole ratio of gallium with respect to a sum of indium and gallium is greater than or equal to about 0.2:1 and less than or equal to about 0.75:1, and wherein the semiconductor nanocrystal shell includes a zinc chalcogenide.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: August 15, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seonmyeong Choi, Eun Joo Jang, Hyo Sook Jang, Kun Su Park
  • Publication number: 20230139207
    Abstract: An electronic device for monitoring. The electronic device includes a functional module arranged to provide an active function, a communication module arranged to communicate with an external communication device, and an energy harvesting module arranged to transform a source energy from an external source to electrical energy for energising both the communication module and the functional module.
    Type: Application
    Filed: December 22, 2022
    Publication date: May 4, 2023
    Inventors: Chi Lun Mak, Xin Wang, Guang Bo Li, Hai Long Zhu, Jing Tian Xi, Jian Kun Su
  • Publication number: 20230118092
    Abstract: A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.
    Type: Application
    Filed: December 7, 2022
    Publication date: April 20, 2023
    Inventors: Chan Su KIM, Kun Su PARK, Tae Ho KIM, Eun Joo JANG, Dae Young CHUNG
  • Publication number: 20230114604
    Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
    Type: Application
    Filed: December 14, 2022
    Publication date: April 13, 2023
    Inventors: Yong Seok HAN, Sung Woo KIM, Jin A KIM, Tae Hyung KIM, Kun Su PARK, Yuho WON, Jeong Hee LEE, Eun Joo JANG, Hyo Sook JANG
  • Publication number: 20230071604
    Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
    Type: Application
    Filed: November 11, 2022
    Publication date: March 9, 2023
    Inventors: Sung Woo KIM, Jin A KIM, Tae Hyung KIM, Kun Su PARK, Yuho WON, Jeong Hee LEE, Eun Joo JANG, Eun Joo JANG, Hyo Sook JANG, Yong Seok HAN, Heejae CHUNG
  • Publication number: 20230061360
    Abstract: An electroluminescent device and a display device including the electroluminescent device. The electroluminescent device includes a first electrode and a second electrode each having a surface opposite the other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including quantum dots; and an electron transport layer disposed between the light emitting layer and the second electrode, the electron transport layer including inorganic material nanoparticles including an anion dopant including P, N, C, Cl, F, Br, S, or a combination thereof.
    Type: Application
    Filed: October 19, 2022
    Publication date: March 2, 2023
    Inventors: Sung woo KIM, Moon Gyu HAN, Eun joo JANG, Kun su PARK
  • Patent number: 11563143
    Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
    Type: Grant
    Filed: August 20, 2020
    Date of Patent: January 24, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Seok Han, Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang
  • Patent number: 11532800
    Abstract: A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: December 20, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan Su Kim, Kun Su Park, Tae Ho Kim, Eun Joo Jang, Dae Young Chung
  • Patent number: 11499098
    Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: November 15, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang, Yong Seok Han, Heejae Chung