Patents by Inventor Kun-Szu Liu

Kun-Szu Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7884013
    Abstract: A dual damascene structure with improved profiles and reduced defects and method of forming the same, the method including forming a first dielectric over a conductive area; forming a first dielectric insulator over the first dielectric; forming a first opening in the first dielectric insulator; lining the opening with a second dielectric; forming a second dielectric insulator over the first dielectric insulator; forming a second opening in the second dielectric insulator overlying and communicating with the first opening; and, filling the first and second openings with a conductive material to electrically communicate with the conductive area.
    Type: Grant
    Filed: May 27, 2008
    Date of Patent: February 8, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Uway Tseng, Alex Huang, Kun-Szu Liu
  • Publication number: 20080230919
    Abstract: A dual damascene structure with improved profiles and reduced defects and method of forming the same, the method including forming a first dielectric over a conductive area; forming a first dielectric insulator over the first dielectric; forming a first opening in the first dielectric insulator; lining the opening with a second dielectric; forming a second dielectric insulator over the first dielectric insulator; forming a second opening in the second dielectric insulator overlying and communicating with the first opening; and, filling the first and second openings with a conductive material to electrically communicate with the conductive area.
    Type: Application
    Filed: May 27, 2008
    Publication date: September 25, 2008
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Uway Tseng, Alex Huang, Kun-Szu Liu
  • Patent number: 7387961
    Abstract: A dual damascene structure with improved profiles and reduced defects and method of forming the same, the method including forming a first dielectric over a conductive area; forming a first dielectric insulator over the first dielectric; forming a first opening in the first dielectric insulator; lining the opening with a second dielectric; forming a second dielectric insulator over the first dielectric insulator; forming a second opening in the second dielectric insulator overlying and communicating with the first opening; and, filling the first and second openings with a conductive material to electrically communicate with the conductive area.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: June 17, 2008
    Inventors: Uway Tseng, Alex Huang, Kun-Szu Liu
  • Publication number: 20060170106
    Abstract: A dual damascene structure with improved profiles and reduced defects and method of forming the same, the method including forming a first dielectric over a conductive area; forming a first dielectric insulator over the first dielectric; forming a first opening in the first dielectric insulator; lining the opening with a second dielectric; forming a second dielectric insulator over the first dielectric insulator; forming a second opening in the second dielectric insulator overlying and communicating with the first opening; and, filling the first and second openings with a conductive material to electrically communicate with the conductive area.
    Type: Application
    Filed: January 31, 2005
    Publication date: August 3, 2006
    Inventors: Uway Tseng, Alex Huang, Kun-Szu Liu