Abstract: This application discloses a memory error prediction method and apparatus, and a device. After memory error data is obtained, a prediction area affected by a memory error and a time range in which the memory error occurs in the prediction area are determined based on time and space information that reflects the memory error and a memory physical structure. In this way, a location at which the error occurs in the memory and time at which the error occurs in the memory are determined based on the memory error data, and a potential risk area affected by the memory error and a time range in which the error occurs in the potential risk area are deeply analyzed from a perspective of a hardware structure with reference to the connection relationship that is between the memory cells and that is indicated by the memory physical structure.

Abstract: The present disclosure relates to data error correction methods and apparatuses. One example method is applied to to-be-corrected data in a storage medium. Column check information is set for the to-be-corrected data, and the column check information includes check data of each column of data in the to-be-corrected data. The example method includes determining that first-row data in to-be-corrected data includes an uncorrected error, and performing error correction on each column of data in the to-be-corrected data based on column check information of the to-be-corrected data, where each column of data includes one bit of data in the first-row data. For each bit of data in the first-row data, if the bit of data is incorrect, after error correction is performed on a column in which the bit of data is located, the bit of data is corrected.

Abstract: A data storage system stores a plurality of partitions for a volume and at least one parity partition for the volume. The parity partition includes erasure encoded data that enables any one of the partitions to be reconstructed using the erasure encoded data of the parity partition. Additionally, the data storage system is configured to generate parity data updates in response to modifications to the volume and store updated parity data in the parity partition, such that a current state of any of the partitions of the volume can be re-created in response to a loss of one of the partitions.

Abstract: The present disclosure relates to the field of carbon materials, in particular to an amorphous carbon material and a preparation method and an use thereof. The amorphous carbon material has the following characteristics: (1) the true density ? of the amorphous carbon material and the interlayer spacing d002 obtained by powder XRD spectrum analysis satisfy the relational formula: 100×?×d002?70; (2) the interlayer spacing d002, La and Lc satisfy the following relational formula: Lc?d002?0.58; and 100×(Lc/La2)×d0023?0.425; (3) the amorphous carbon material contains 0.001-2% of a silicon component and 0.001-2% of an aluminum component, based on the total mass of the amorphous carbon material. The amorphous carbon material prepared by the present disclosure has desirable heat transfer performance and can provide high battery capacity.

Abstract: The present disclosure relates to the field of carbon materials, in particular to an amorphous carbon material and a preparation method and an application thereof. The amorphous carbon material has the following characteristics: (1) a true density ? of the amorphous carbon material and a interlayer spacing d002 obtained by powder X-Ray Diffraction (XRD) spectrum analysis satisfy the following relational formula: 100×?×d002?70; (2) the interlayer spacing d002, La and Lc of the amorphous carbon material obtained by powder XRD spectrum analysis satisfy the following relational formula: Lc×d002?0.58, and 100×(Lc/La2)×d0023?0.425 wherein ? is denoted by the unit of g/cm3, each of d002, Lc and La is denoted by the unit of nm. The amorphous carbon material prepared by the present disclosure has desirable heat transfer performance and can provide high battery capacity.

Abstract: The invention provides an electrochemical discharge-assisted micro-grinding device for micro-components of brittle and hard materials. The device includes a micro-grinding tool, grinding fluid, a workpiece, an auxiliary electrode, a processing groove, and a pulsed DC power supply; the processing groove is filled with grinding fluid; the micro-grinding tool, the workpiece, and the auxiliary electrode are immersed in the grinding fluid; the micro-grinding tool is composed of a conductive grinding tool base, an electroplating layer, and insulated superabrasives. The micro-grinding tool is connected to the negative electrode of the pulsed DC power supply; the grinding fluid is composed of H2O2, Na2CO3, EDTA-Fe-Na, and deionized water; the workpiece material is brittle and hard; a large number of micro structures need to be produced on the surface of the workpiece.

Abstract: The present disclosure relates to the technical field of solar cells, and relates to a crystalline silicon solar cell and a preparation method thereof, and a photovoltaic assembly. The crystalline silicon solar cell includes a crystalline silicon substrate, a passivation layer that is disposed on the crystalline silicon substrate and that is provided with through holes, a carrier collection layer that is disposed on the passivation layer, and electrodes that contact the carrier collection layer; the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer. In the described crystalline silicon solar cell, through holes are provided on the passivation layer, and the carrier collection layer contacts the crystalline silicon substrate by means of the through holes on the passivation layer.

Abstract: This paper describes an invention involving an electrochemical discharge-enabled micro-grinding process for micro-components of silicon-based materials. The specific machining method is described below. A micro-grinding tool and an auxiliary electrode are respectively connected to the negative and positive electrodes of a pulsed DC power supply. When the current flows through the loop, an electrochemical hydrogen evolution reaction (HER) occurs at the micro-grinding tool in the grinding fluid, which generate multiple hydrogen bubbles. The bubbles coalesce into an insulating gas film and separate the micro-grinding tool from the grinding fluid; when the critical voltage is reached, the gas film is broken down and an electrochemical discharge occurs accompanied by discharge spark; under the action of the discharge spark, the surface material of the workpiece in the discharge-affected region is directly ablated to generate a heat-affected layer (HAL), namely, physical modification.

Abstract: Systems and methods are disclosed for systems-in-packages that have multiple shielding components. In one embodiment, a system-in-package may include a substrate, an integrated circuit package disposed on the substrate, a system-on-a-chip disposed on the substrate, and a molding compound disposed over the integrated circuit package and the system-on-a-chip. The system-in-package may include a first electromagnetic interference shielding component disposed about the molding compound, and a second electromagnetic interference shielding component that at least partially forms an outer surface of the system-in-package. The second electromagnetic interference shielding component may have a patterned structure formed thereon.

Abstract: A fault-tolerant data storage system associates durability requirements of service level agreements (SLAs) for volumes stored in the fault-tolerant data storage system with volume partitions stored in the fault-tolerant data storage system. For a given volume partition, volume data is stored in two or more replicas on two or more different system components and/or erasure encoded across multiple other system components. The fault-tolerant data storage system uses the respective durability requirements of the SLAs and failure statistics of the system components to allocate bandwidth for replacing lost instances of redundantly stored volume data such that the lost data is replaced within a target time calculated to guarantee the durability requirements of the SLAs are satisfied.

Abstract: The invention provides an electrochemical discharge-assisted micro-grinding device for micro-components of brittle and hard materials. The device includes a micro-grinding tool, grinding fluid, a workpiece, an auxiliary electrode, a processing groove, and a pulsed DC power supply; the processing groove is filled with grinding fluid; the micro-grinding tool, the workpiece, and the auxiliary electrode are immersed in the grinding fluid; the micro-grinding tool is composed of a conductive grinding tool base, an electroplating layer, and insulated superabrasives. The micro-grinding tool is connected to the negative electrode of the pulsed DC power supply; the grinding fluid is composed of H2O2, Na2CO3, EDTA-Fe-Na, and deionized water; the workpiece material is brittle and hard; a large number of micro structures need to be produced on the surface of the workpiece.

Abstract: This paper describes an invention involving an electrochemical discharge-enabled micro-grinding process for micro-components of silicon-based materials. The specific machining method is described below. A micro-grinding tool and an auxiliary electrode are respectively connected to the negative and positive electrodes of a pulsed DC power supply. When the current flows through the loop, an electrochemical hydrogen evolution reaction (HER) occurs at the micro-grinding tool in the grinding fluid, which generate multiple hydrogen bubbles. The bubbles coalesce into an insulating gas film and separate the micro-grinding tool from the grinding fluid; when the critical voltage is reached, the gas film is broken down and an electrochemical discharge occurs accompanied by discharge spark; under the action of the discharge spark, the surface material of the workpiece in the discharge-affected region is directly ablated to generate a heat-affected layer (HAL), namely, physical modification.

Abstract: An MPCVD device capable of realizing effective doping, comprises a reaction chamber and a gas input structure, wherein the gas input structure includes a first pipeline and a second pipeline for reaction gas, a first gas distributor, connected with the first pipeline, uniformly transports gas as a first reactant into the reaction chamber through a gas outlet of the first pipeline located near the top of the reaction chamber, the second pipeline uniformly inputs a doped reaction gas to a surface of a substrate through a second gas distributor with circular shape, a height of the gas transport ring connected with the second pipeline is substantially the same as that of a support for the substrate, and the gas transport ring can be concentrically placed at a center position inside the support, or the gas transport ring can also be concentrically placed outside the support.

Abstract: A surface mount electrical connector and methods of making and using a surface mount electrical connector. The connector includes a housing and a contact subassembly received in the housing. The contact subassembly includes interface contacts, board termination contacts, and an internal circuit board. The interface contacts and the board termination contacts are mounted to the internal circuit board to electrically connect the interface contacts and the board termination contacts through the internal circuit board. Each of surface mount tail ends of the board termination contacts has a bent portion that defines a mounting surface configured to be surface mounted to a mounting face of a main circuit board, to establish an electrical connection between the board termination contacts and the main circuit board.

Abstract: A data storage system includes a head node and mass storage devices. The head node is configured to store volume data and flush volume data to the mass storage devices. Additionally, the head node is configured to determine a quantity of data partitions and/or parity partitions to store for a chunk of volume data being flushed to the mass storage devices in order to satisfy a durability guarantee. For chunks of data for which complete copies are also stored in an additional data storage system, the head node is configured to reduce the quantity of data partitions and/or parity partitions stored such that required storage space is reduced while still ensuring that the durability guarantee is satisfied.

Abstract: Embodiments of the present disclosure are a pitch-based negative electrode material for a sodium-ion battery and related methods and applications. The method comprises: placing a pitch recursor into a muffle furnace to allow the pitch precursor to experience pre-oxidation for 2 to 6 hours at a temperature ranging from 200° C. to 350° C., to obtain pre-oxidized pitch; placing the pre-oxidized pitch into a high-temperature carbonization furnace, and increasing the temperature to 1300° C. to 1600° C. at a temperature increase speed of 0.5° C./min to 5° C./min, and carrying out thermal treatment on the pre-oxidized pitch in an inert atmosphere for 1 to 10 hours, to allow the pre-oxidized pitch to experience carbonization reactions, oxygen in the pre-oxidized pitch being used for breaking an ordered structure of the pitch during the carbonization of the pre-oxidized pitch, so as to form a wedge-shaped voids disordered structure.

Abstract: A network connector and method for making a network connector. The connector includes a core body, and first and second sets of contacts supported by the core body. Each of the of contacts having an exposed portion extending outside of the core body. Wires are coupled to the first and second sets of contacts. An internal printed circuit board is supported on the core body. The internal printed circuit board is coupled to the exposed portions of the first set of contact. A magnetic isolation component supported on the core body configured to filter electrical signals of the plurality of wires. The exposed portions of the second set of contacts are configured to engage an external printed circuit board.

Abstract: In a storage medium management method, a controller receives an address space request that requests the provision of an address space in a target storage medium for an operating system, the target storage medium having two different types of storage media. The Controller determines a first address space in the target storage medium based on the address space request, and a physical address of the first address space to a target virtual address, which is managed by the operating system. The controller then provides to an operating system a first address space requested by the address space request, such that the first address space is directly managed by an operating system, without manual configuration or restart of an electronic device.

Abstract: A first storage node is connected to a host by using a first network interface card of the first storage node, and is connected to a second storage node by using a second network interface card. The first storage node receives a data processing request from the host, wherein the data processing request carries a target storage address of to-be-processed data, determines the second storage node based on the target storage address of the to-be-processed data, and sends the data processing request to the second storage node by using the second network interface card, wherein the data processing request instructs the second storage node to process the to-be-processed data.