Abstract: A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.

Abstract: A method for programming a non-volatile memory in a programming operation is provided. The non-volatile memory has a number of cells and each of part of the cells store data having at least 2 bits at least corresponding to a first page and a second page. The method includes the following steps. At least one programming pulse is provided. At least one first program-verify pulse is provided. A program-fail-reference signal is enabled. At least one second program-verify pulse is provided after enabling the program-fail-reference signal.

Abstract: A method for programming a non-volatile memory in a programming operation is provided. The non-volatile memory has a number of cells and each of part of the cells store data having at least 2 bits at least corresponding to a first page and a second page. The method includes the following steps. At least one programming pulse is provided. At least one first program-verify pulse is provided. A program-fail-reference signal is enabled. At least one second program-verify pulse is provided after enabling the program-fail-reference signal.

Abstract: A method for programming a non-volatile memory in a programming operation is provided. The non-volatile memory has a number of cells and each of part of the cells stores data having at least 2 bits at least corresponding to a first page and a second page. The first programming-verifying operation including programming the first page and verifying whether the first page is successfully programmed is performed. When a first original fail-bit number for the first page is more than a predetermined fail-bit value, a second programming-verifying operation to the first page is performed to obtain a first over-counting fail-bit number for the first page and reduce the first original fail-bit number by the first over-counting fail-bit number. When the reduced first original fail-bit number is not more than the predetermined fail-bit value, the first page is set as successfully programmed.

Abstract: A method for programming a non-volatile memory in a programming operation is provided. The non-volatile memory has a number of cells and each of part of the cells stores data having at least 2 bits at least corresponding to a first page and a second page. The first programming-verifying operation including programming the first page and verifying whether the first page is successfully programmed is performed. When a first original fail-bit number for the first page is more than a predetermined fail-bit value, a second programming-verifying operation to the first page is performed to obtain a first over-counting fail-bit number for the first page and reduce the first original fail-bit number by the first over-counting fail-bit number. When the reduced first original fail-bit number is not more than the predetermined fail-bit value, the first page is set as successfully programmed.