Abstract: An embodiment of the present disclosure provides a semiconductor device arrangement. This arrangement includes a substrate, an adhesive structure, and a first semiconductor device. The substrate includes an upper surface. The adhesive structure is located on the upper surface and includes a first concave region. The first semiconductor device includes a lower surface facing toward the adhesive structure and a conductive bump located under the lower surface and in the first concave region. The conductive bump includes a first portion and a second portion. Wherein the lower surface does not contact the adhesive structure, the first portion contacts the first concave region, and the second portion does not contact the first concave region.

Abstract: A pixel package includes a first light-emitting diode, a second light-emitting diode, a third light-emitting diode, a transparent layered structure, and a first conductive structure. The first light-emitting diode has a first light-emitting surface and a first bottom surface opposite thereto, and the first light-emitting diode is arranged side by side with the second light-emitting diode over the first light-emitting surface. The transparent layered structure encapsulates and separates the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode. The first conductive structure has a first portion and a second portion. The first portion is located between the first light-emitting diode and the first light-emitting surface. The second portion is located under the first portion and is exposed from the transparent layered structure.

Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.

Abstract: A sensing device includes a semiconductor structure, a substrate, a first electrode and a second electrode, and a heater. A sensing area arranged on the top side of the semiconductor structure. The substrate is located under the bottom side of the semiconductor. The first electrode and the second electrode are arranged on the top side of the semiconductor structure. The heater is disposed on the semiconductor structure and separated from the sensing area by a distance less than 100 ?m.

Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.