Abstract: The present disclosure relates to an in-situ testing device including a measuring head, a drive mechanism, and a testing chamber. The testing chamber is provided with a first optical observation hole. The measuring head is provided with a second optical observation hole. The testing chamber is provided with an opening allowing the measuring head to pass. The testing chamber is further provided with a shielding door, and the drive mechanism is connected to the shielding door to drive the shielding door to move relative to the testing chamber, to open or cover the opening, thereby opening or closing the testing chamber.

Abstract: A processing system detects excessive requests sent on behalf of a virtual machine executing at the processing system within a predetermined period of time and denies subsequent requests sent on behalf of that virtual machine until after the predetermined period of time has elapsed in order to grant access to resources of the processing system for servicing requests from other virtual machines and to prevent a virtual machine that has been compromised by an attack from overwhelming the processing system with malicious requests. The processing system sets a threshold number of event requests for each type of event request that can occur within a predetermined period of time. If the number of event requests of a certain type exceeds the threshold for that event type, the processing system ignores subsequent event requests of that type until the predetermined period of time has expired.

Abstract: A flat plate sample holder expansion structure used in a vacuum is configured to convey a flat plate sample holder in a vacuum environment, and detachably attached to a flat plate sample holder tray through an adapter. A receiving space for receiving the flat plate sample holder is provided between the adapter and the flat plate sample holder tray. The flat plate sample holder is detachably arranged in the receiving space. A cylindrical sample holder gripper is detachably connected to the adapter. The cylindrical sample holder gripper conveys the flat plate sample holder and samples thereon into a low-temperature, high-intensity magnetic field apparatus, thereby realizing an objective of replacing samples in the vacuum environment. A vacuum test platform is built by combining the apparatuses using the two types of sample holders.

Abstract: The present disclosure relates to an in-situ testing device including a measuring head, a drive mechanism, and a testing chamber. The testing chamber is provided with a first optical observation hole. The measuring head is provided with a second optical observation hole. The testing chamber is provided with an opening allowing the measuring head to pass. The testing chamber is further provided with a shielding door, and the drive mechanism is connected to the shielding door to drive the shielding door to move relative to the testing chamber, to open or cover the opening, thereby opening or closing the testing chamber.

Abstract: The present application discloses a multi-channel topological insulator structure, including an insulating substrate, multiple topological insulator quantum well films, and multiple insulating interlayers. The topological insulator quantum well films and the insulating interlayers are alternately stacked on a surface of the insulating substrate. Two adjacent topological insulator quantum well films are separated by one insulating interlayer. The present application also discloses a method for making the multi-channel topological insulator structure and an electrical device.

Abstract: The present application discloses a double-channel topological insulator structure includes an insulating substrate, a first topological insulator quantum well film, an insulating interlayer, and a second topological insulator quantum well film. The first topological insulator quantum well film, the insulating interlayer, and the second topological insulator quantum well film are orderly stacked on a surface of the insulating substrate. The first and second topological insulator quantum well films are separated by the insulating interlayer. The present application also discloses a method for making the double-channel topological insulator structure and a method for generating quantum spin Hall effect.

Abstract: The present application discloses a topological insulator structure including an insulating substrate, a topological insulator quantum well film, and an insulating protective layer. The topological insulator quantum well film and the insulating protective layer are orderly stacked on a surface of the insulating substrate, forming a heterojunction structure. The insulating protective layer is selected from the group consisting of the wurtzite-structured CdSe, the sphalerite-structured ZnTe, the sphalerite-structured CdSe, the sphalerite-structured CdTe, the sphalerite-structured HgSe, the sphalerite-structured HgTe, and combinations thereof. The present application also discloses a method for making the topological insulator structure.

Abstract: A processing system detects excessive requests sent on behalf of a virtual machine executing at the processing system within a predetermined period of time and denies subsequent requests sent on behalf of that virtual machine until after the predetermined period of time has elapsed in order to grant access to resources of the processing system for servicing requests from other virtual machines and to prevent a virtual machine that has been compromised by an attack from overwhelming the processing system with malicious requests. The processing system sets a threshold number of event requests for each type of event request that can occur within a predetermined period of time. If the number of event requests of a certain type exceeds the threshold for that event type, the processing system ignores subsequent event requests of that type until the predetermined period of time has expired.

Abstract: The present disclosure relates to implementing a system for facilitating the migration of virtual machines and corresponding virtual functions from a source host machine to a destination host machine. A source computing device is configured to execute a plurality of virtual machines such that, each of the plurality of virtual machines is associated with at least one virtual function. In response to receiving a migration request, the source computing device is configured to save a state associated with a preempted virtual function for transfer to a destination computing device. The state associated with the preempted virtual function is a subset of a plurality of states associated with the plurality of virtual machines.

Abstract: Described herein are polymers, polymeric gels, or a composition thereof, for drug delivery. The polymers, which include boronic-acid containing moieties (e.g., and polyol-containing moieties (e.g., are prepared by free-radical polymerization and can self-assemble into polymeric gels such as hydrogels. Also provided are methods or preparing the polymers, kits involving the polymers and/or polymeric gels or a composition thereof, for use as materials or delivery applications of an agent to a subject.

Abstract: A high-temperature superconducting film includes a SrTiO3 substrate, a single crystalline FeSe layer, and a protective layer with a layered crystal structure. The single crystalline FeSe layer is sandwiched between the SrTiO3 substrate and the protective layer via a layer-by-layer mode. An onset temperature of superconducting transition of the high-temperature superconducting film is greater than or equal to 54 K, and a critical current density of the high-temperature superconducting film is about 106 A/cm2 at 12 K.

Abstract: Described herein are polymers, polymeric gels, or a composition thereof, for drug delivery. The polymers, which include boronic-acid containing moieties (e.g., and polyol-containing moieties (e.g., are prepared by free-radical polymerization and can self-assemble into polymeric gels such as hydrogels. Also provided are methods or preparing the polymers, kits involving the polymers and/or polymeric gels or a composition thereof, for use as materials or delivery applications of an agent to a subject.

Abstract: A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.

Abstract: A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.

Abstract: A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013 cm?2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Abstract: A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.

Abstract: A high-temperature superconducting film includes a SrTiO3 substrate, a single crystalline FeSe layer, and a protective layer with a layered crystal structure. The single crystalline FeSe layer is sandwiched between the SrTiO3 substrate and the protective layer via a layer-by-layer mode. An onset temperature of superconducting transition of the high-temperature superconducting film is greater than or equal to 54 K, and a critical current density of the high-temperature superconducting film is about 106 A/cm2 at 12 K.

Abstract: An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, wherein 0<x<1, 0<y<2, and values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi, the magnetically doped topological insulator quantum well film is in 3 QL thickness to 5 QL thickness.

Abstract: A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0.05<x<0.3, 0<y<0.3, and 1:2<x:y<2:1. The magnetically doped TI quantum well film is in 3 QL to 5 QL.

Abstract: A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0<x<1, 0<y<2. Values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi. The magnetically doped TI quantum well film is in 3 QL to 5 QL.