Abstract: A method for tamper protection in cryptographic calculations is provided. A cryptographic calculation includes a plurality of normal rounds and a plurality of redundant rounds. The method includes obtaining a first variable x and a second variable y using a random number generator; dividing the normal rounds into a first normal section and a second normal section, and dividing the redundant rounds into a first redundant section and a second redundant section according to the first variable x and the second variable y; executing the first normal section and the first redundant section in sequence using a clock signal; in response to completion of the first redundant section and a first calculation result of the first normal section and a second calculation result of the first redundant section being the same, executing the second normal section and the second redundant section in sequence to complete the cryptographic calculation.

Abstract: A method for fabricating magnetic tunnel junction (MTJ) pillars is provided. The method includes following operations. A MTJ stack of layers including a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer is provided. A first patterning step is carried out by using a reactive ion etching. In the first patterning step, the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalls of the pillar structures.

Abstract: A method for fabricating magnetic tunnel junction (MTJ) pillars is provided. The method includes following operations. A MTJ stack of layers including a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer is provided. A first patterning step is carried out by using a reactive ion etching. In the first patterning step, the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalk of the pillar structures.

Abstract: A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. A substrate having a cell region and a mark region is received. A dielectric layer is etched to expose a conductive line in the cell region and form a trench in the mark region. A conductive layer is formed over the cell region and in the trench. The conductive layer is etched to form a bottom electrode via in the cell region and a first mark layer in the trench.

Abstract: A method for fabricating magnetic tunnel junction (MTJ) pillars is provided. The method includes following operations. A MTJ stack of layers including a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer is provided. A first patterning step is carried out by using a reactive ion etching. In the first patterning step, the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalk of the pillar structures.

Abstract: A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.

Abstract: A foldable storage box includes a bottom panel, a rear panel, two lateral panels, a front panel, and a lid. The bottom panel has a rear edge with a first pivotal connection portion, two lateral edges each with a second pivotal connection portion, and a front edge with a third pivotal connection portion. The rear panel has a first bottom edge with a fourth pivotal connection portion pivotally connected to the first pivotal connection portion. Each lateral panel has a second bottom edge with a fifth pivotal connection portion pivotally connected to one of the second pivotal connection portions. The front panel has a third bottom edge with a sixth pivotal connection portion pivotally connected to the third pivotal connection portion. The lid is detachably connected to the rear panel, the two lateral panels, and the front panel to form the foldable storage box and the receiving space therein.