Abstract: An active fixed block track circuit comprises at least a fixed block section, comprising at least two rails corresponding to each other, each having an isolation connector at two ends thereof and connected to a power supply unit and a traffic signal; a short driving unit, connected to each of the two rails within the fixed block section; and a detection unit, connected to the short driving unit. In this manner, not only the previous rail traffic signal circuit function where no more than one train may be allowed into the same fixed block section is maintained, but also another train approaching from the rear may be prevented from entering the fixed block section when the detection unit at the fixed block section detects an exceptional case happening at a neighboring fixed block section so that the traffic signal unit is switched into a stop traffic signal.

Abstract: An active fixed block track circuit comprises at least a fixed block section, comprising at least two rails corresponding to each other, each having an isolation connector at two ends thereof and connected to a power supply unit and a traffic signal; a short driving unit, connected to each of the two rails within the fixed block section; and a detection unit, connected to the short driving unit. In this manner, not only the previous rail traffic signal circuit function where no more than one train may be allowed into the same fixed block section is maintained, but also another train approaching from the rear may be prevented from entering the fixed block section when the detection unit at the fixed block section detects an exceptional case happening at a neighboring fixed block section so that the traffic signal unit is switched into a stop traffic signal.

Abstract: The invention describes a method to facilitate the use of low-sensitivity monitoring equipment for detecting and monitoring defects on the surface of semiconductor wafers. The method includes the use of a hydrofluoric acid solution for increasing the dimensions of a defect and the application of a thin-film layer of a metal, such as titanium, for improving the appearance of the defect such that the defect dimensions increase to above 0.1 nanometer, the detection threshold for economical low-sensitivity monitoring equipment.

Abstract: The invention describes a method to facilitate the use of low-sensitivity monitoring equipment for detecting and monitoring defects on the surface of semiconductor wafers. The method includes the use of a hydrofluoric acid solution for increasing the dimensions of a defect and the application of a thin-film layer of a metal, such as titanium, for improving the appearance of the defect such that the defect dimensions increase to above 0.1 nanometer, the detection threshold for economical low-sensitivity monitoring equipment.

Abstract: The present invention provides a method of producing an added defect count for monitoring the property of chambers or wafers. First, a proper pre-process sensitivity is determined with map to map process by maximizing the summation of a mapping rate and a catching rate. Second, a wafer is scanned with the proper pre-process sensitivity and a pre-process particle number P1 is recorded. Third, a manufacturing step is processed on the wafer. Fourth, the wafer is scanned with the most sensitive scale of the post-process sensitivities and a post-process particle number P2 is recorded. Finally, the post-process particle number P2 is subtracted from the pre-process particle number P1.

Abstract: The present invention provides a method of producing an added defect count for monitoring the property of chambers or wafers. First, a proper pre-process sensitivity is determined with map to map process by maximizing the summation of a mapping rate and a catching rate. Second, a wafer is scanned with the proper pre-process sensitivity and a pre-process particle number P1 is recorded. Third, a manufacturing step is processed on the wafer. Fourth, the wafer is scanned with the most sensitive scale of the post-process sensitivities and a post-process particle number P2 is recorded. Finally, the post-process particle number P2 is subtracted from the pre-process particle number P1.