Abstract: A airport runway warning system disposes a number of warning lanterns parallel to the runway by the two sides of the runway. Also, every warning lantern is at least connected to one empty sensor, to sense the nearby runway zone. All the warning lanterns and sensors are connected to a central controlling unit, disposed on the airport control tower. The central controlling unit, furthermore, connects to the main displaying light in the entrance of every communication path. By the operation in coordination via every warning lantern, sensor, central controlling unit and main displaying light, additional runway real-time information can be provided to the pilot and the people in the control tower. Particularly, the obstacles appearing on the runway abruptly can also be warned immediately.

Abstract: A method of figuring an exposure energy. A required exposure energy is calculated according to a critical dimension (CD) of an exposing layer. A first CD deviation is obtained from a layer before the exposing layer. From the first CD deviation, a first energy compensation is calculated. Whether the deviation of photoresist sensitivity of two sequential batches is less than 1% is checked. If the deviation of photoresist sensitivity of two sequential batches is less than 1%, a sum of the required exposure energy and the first energy compensation is the exposure energy applied to the exposing layer. Otherwise, a second CD deviation is commutated according to the deviation of photoresist sensitivity of two sequential batches. A second energy compensation is then obtained from the second CD deviation, and a sum of the required exposure energy and the first/second energy compensation is the exposure energy applied to the exposing layer.

Abstract: A method of figuring an exposure energy. A required exposure energy is calculated according to a critical dimension (CD) of an exposing layer. A first CD deviation is obtained from a layer before the exposing layer. From the first CD deviation, a first energy compensation is calculated. Whether the deviation of photoresist sensitivity of two sequential batches is less than 1% is checked. If the deviation of photoresist sensitivity of two sequential batches is less than 1%, a sum of the required exposure energy and the first energy compensation is the exposure energy applied to the exposing layer. Otherwise, a second CD deviation is commutated according to the deviation of photoresist sensitivity of two sequential batches. A second energy compensation is then obtained from the second CD deviation, and a sum of the required exposure energy and the first/second energy compensation is the exposure energy applied to the exposing layer.

Abstract: A structure of a critical dimension bar. The critical dimension bar is formed on a substrate between the dies. A base layer is formed on a portion of the substrate, and a critical material layer is formed on the die, the base layer and the substrate with a uniform thickness. The base layer has a thickness to result in a surface profile the same as the die. A die photomask pattern, a first and a second test photomask patterns on a photomask are then transferred to the critical material on dies, the base layer and the substrate, respectively. These three photomask patterns have the same pattern width.

Abstract: A structure of a critical dimension bar. The critical dimension bar is formed on a substrate between the dies. A base layer is formed on a portion of the substrate, and a critical material layer is formed on the die, the base layer and the substrate with a uniform thickness. The base layer has a thickness to result in a surface profile the same as the die. A die photomask pattern, a first and a second test photomask patterns on a photomask are then transferred to the critical material on dies, the base layer and the substrate, respectively. These three photomask patterns have the same pattern width.

Abstract: A structure of a critical dimension bar. The critical dimension bar is formed on a substrate between the dies. A base layer is formed on a portion of the substrate, and a critical material layer is formed on the die, the base layer and the substrate with a uniform thickness. The base layer has a thickness to result in a surface profile the same as the die. A die photomask pattern, a first and a second test photomask patterns on a photomask are then transferred to the critical material on dies, the base layer and the substrate, respectively. These three photomask patterns have the same pattern width.