Abstract: A method includes obtaining a base structure of a three-dimensional (3D) memory device, forming, on the base structure, a blocking layer including a high-k dielectric material, and forming, on the blocking layer, a wordline for the 3D memory device including molybdenum using an atomic layer deposition (ALD) process.

Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal nitride layer comprising lanthanum nitride (LaN) and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal nitride layer.

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.

Abstract: Embodiments of the disclosure provide conformally deposited molybdenum films having reduced resistivity and methods of forming the same. The methods include forming a nucleation layer directly on a dielectric layer on a substrate surface by exposing the substrate surface to a molybdenum-containing precursor and a nucleation reactant, and conformally depositing a molybdenum film on the nucleation layer. Another aspect of the disclosure pertains to a method that is part of a gap fill process, comprising forming a nucleation layer directly on a dielectric region within one or more high aspect ratio gap features, including vertical gap features and/or horizontal gap features, and conformally depositing a molybdenum film on the nucleation layer to fill the feature.

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

Abstract: Methods for selective deposition are described herein. The methods include depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface and a metal silicide surface. The methods further comprise selectively depositing a molybdenum film on a second portion of the substrate surface that does not have the oxide deposited thereon.

Abstract: Embodiments of the disclosure relate to methods for molybdenum gapfill. Additional embodiments provide a method of forming a molybdenum gapfill without substantial voids. Some embodiments of the disclosure are relevant for higher aspect ratio features including DRAM memory cells.

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.

Abstract: Method of forming film stacks and film stacks for electronic devices are described herein. The methods comprise depositing a molybdenum nucleation layer on a gate oxide layer; depositing a molybdenum layer on the molybdenum nucleation layer; and performing a plasma nitridation process to insert nitrogen atoms into the molybdenum layer to form a work function modulating layer having an effective work function ? 4.5 eV. The plasma nitridation process comprises exposing the molybdenum layer to a radical-rich plasma comprising one or more of N2 or NH3. Some methods further comprise one or more of annealing the work function modulating layer, depositing a conductive layer on the work function modulating layer, or performing an etch process.

Abstract: A deposition method demonstrating a slower growth rate is disclosed. Some embodiments of the disclosure provide CVD methods which utilize a halide-containing growth inhibitor as a co-reactant with a metal halide precursor and a reactant. Some embodiments of the disclosure relate to CVD and ALD methods comprising exposure of the substrate surface to a pretreatment comprising a halide-containing growth inhibitor.

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.

Abstract: A method of producing a grating structure comprises the steps of forming a stamp from flexible plastic material, the stamp including a negative of a periodic grating pattern on a first surface; forming an ink by applying a polymer film to the stamp, the ink including a first surface and an opposing second surface, wherein the first surface of the ink contacts the first surface of the stamp such that the ink retains a positive of the periodic grating pattern; placing the ink and the stamp on a substrate such that the second surface of the ink contacts an upper surface of the substrate; and removing the stamp from the ink by applying a tensional force to one edge of the stamp.

Abstract: A method of producing a grating structure comprises the steps of forming a stamp from flexible plastic material, the stamp including a negative of a periodic grating pattern on a first surface; forming an ink by applying a polymer film to the stamp, the ink including a first surface and an opposing second surface, wherein the first surface of the ink contacts the first surface of the stamp such that the ink retains a positive of the periodic grating pattern; placing the ink and the stamp on a substrate such that the second surface of the ink contacts an upper surface of the substrate; and removing the stamp from the ink by applying a tensional force to one edge of the stamp.

Abstract: A method of producing a grating structure comprises the steps of forming a stamp from flexible plastic material, the stamp including a negative of a periodic grating pattern on a first surface; forming an ink by applying a polymer film to the stamp, the ink including a first surface and an opposing second surface, wherein the first surface of the ink contacts the first surface of the stamp such that the ink retains a positive of the periodic grating pattern; placing the ink and the stamp on a substrate such that the second surface of the ink contacts an upper surface of the substrate; and removing the stamp from the ink by applying a tensional force to one edge of the stamp.