Patents by Inventor KUNBIN LIN

KUNBIN LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optoelectronic device with wavelenghth coversion material in hollow structure for blue light leakage rate reduction
    Patent number: 11329200
    Abstract: An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a transparent substrate, an optoelectronic chip, electrodes and a wavelength conversion layer. The transparent substrate is provided with a hollow structure and an installation area, the hollow structure penetrates through two opposite surfaces of the transparent substrate and is located at a periphery of the installation area. The optoelectronic chip is arranged in the installation area. The electrodes are arranged on the transparent substrate and electrically connected to the optoelectronic chip; and the wavelength conversion layer is arranged on the two opposite surfaces of the transparent substrate and filled in the hollow structure, wherein the optoelectronic chip is covered by the wavelength conversion layer. The effect of reducing leakage rate of blue light of an optoelectronic device such as a LED packaging structure can be achieved.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: May 10, 2022
    Assignee: KAISTAR LIGHTING (XIAMEN) CO., LTD.
    Inventors: Kunbin Lin, Shaofeng Zhang
  • OPTOELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20210005792
    Abstract: An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a transparent substrate, an optoelectronic chip, electrodes and a wavelength conversion layer. The transparent substrate is provided with a hollow structure and an installation area, the hollow structure penetrates through two opposite surfaces of the transparent substrate and is located at a periphery of the installation area. The optoelectronic chip is arranged in the installation area. The electrodes are arranged on the transparent substrate and electrically connected to the optoelectronic chip; and the wavelength conversion layer is arranged on the two opposite surfaces of the transparent substrate and filled in the hollow structure, wherein the optoelectronic chip is covered by the wavelength conversion layer. The effect of reducing leakage rate of blue light of an optoelectronic device such as a LED packaging structure can be achieved.
    Type: Application
    Filed: June 25, 2020
    Publication date: January 7, 2021
    Inventors: KUNBIN LIN, SHAOFENG ZHANG