Abstract: A load apparatus for testing is provided. The load apparatus for testing includes a first comparison circuit, a switch circuit, a voltage-dividing load circuit and a second comparison circuit. The first comparison circuit receives an input voltage from an input terminal and obtains a first sensing voltage according to the input voltage, and compares whether the first sensing voltage is greater than a first reference voltage for providing a first sensing signal. The switch circuit receives the first sensing signal and the input voltage. The switch circuit guides the input voltage to the voltage-dividing load circuit according to the first sensing signal. The voltage-dividing load circuit generates a second sensing voltage according to an input current generated at the input terminal. The second circuit is coupled to the voltage-dividing load circuit and compares whether the input current is greater than a reference current for providing a testing signal.

Abstract: A load apparatus for testing is provided. The load apparatus for testing includes a first comparison circuit, a switch circuit, a voltage-dividing load circuit and a second comparison circuit. The first comparison circuit receives an input voltage from an input terminal and obtains a first sensing voltage according to the input voltage, and compares whether the first sensing voltage is greater than a first reference voltage for providing a first sensing signal. The switch circuit receives the first sensing signal and the input voltage. The switch circuit guides the input voltage to the voltage-dividing load circuit according to the first sensing signal. The voltage-dividing load circuit generates a second sensing voltage according to an input current generated at the input terminal. The second circuit is coupled to the voltage-dividing load circuit and compares whether the input current is greater than a reference current for providing a testing signal.

Abstract: A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.

Abstract: A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.

Abstract: A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.

Abstract: A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.