Abstract: A graphite composite conductive bar material and a method for producing graphene using the same are provided. The graphite composite conductive bar material is fabricated via mixing graphite powder more than 50% by weight with a polymeric material. The graphite composite conductive bar is used in a plasma electrochemical exfoliation process as a cathode and contacts with the surface of the electrolytic solution, whereby the bar material is exfoliated to obtain a less defective graphene. Therefore, the present invention can improve product yield and reduce production cost. In addition, a solid-state nitrogen-containing precursor may be added to the graphite composite conductive bar material for producing nitrogen-doped graphene. In the nitrogen-doped graphene produced by the present invention, the amount of doped nitrogen is increased and tunable compared to the former invention, and the level of oxidization is decreased.

Abstract: A graphite oxide and/or graphene preparation method includes providing a plasma electrolytic apparatus, wherein an electrolyte is provided and a graphite electrode is configured as a cathode of the plasma electrolytic apparatus; and providing a cathodic current so as to initiate a plasma electrolytic process at the graphite electrode to obtain graphite oxide and/or graphene. The graphite oxide and/or graphene can be synthesized through plasma electrolytic processing at relatively low temperature under atmospheric pressure within a very short period of time, without the need for concentrated acids or strong oxidizing agents. The present invention may prepare graphite oxide and/or graphene with plasma electrolytic process directly from graphite, without requiring any prior purification or pretreatment. This plasma electrolytic process of the present invention is quite promising and provided with advantages such as low cost, simple setup, high efficiency, and environmental friendliness.

Abstract: A graphite oxide or graphene preparation method includes providing a plasma electrolytic apparatus, where an electrolytic solution is provided and a graphite electrode is configured as a cathode of the plasma electrolytic apparatus; and providing a cathodic current so as to initiate a plasma electrolytic process at the graphite cathode to obtain graphite oxide or graphene. The graphite oxide can be synthesized through plasma electrolytic processing at relatively low temperature under atmospheric pressure within a very short period of time, without the need for concentrated acids or strong oxidizing agents. The present invention may prepare graphite oxide with plasma electrolytic process directly from graphite, without requiring any prior purification. This plasma electrolytic process of the present invention is quite promising and provided with advantages such as low cost, simple setup, high efficiency, and environmental friendliness.

Abstract: A graphite oxide and/or graphene preparation method includes providing a plasma electrolytic apparatus, wherein an electrolyte is provided and a graphite electrode is configured as a cathode of the plasma electrolytic apparatus; and providing a cathodic current so as to initiate a plasma electrolytic process at the graphite electrode to obtain graphite oxide and/or graphene. The graphite oxide and/or graphene can be synthesized through plasma electrolytic processing at relatively low temperature under atmospheric pressure within a very short period of time, without the need for concentrated acids or strong oxidizing agents. The present invention may prepare graphite oxide and/or graphene with plasma electrolytic process directly from graphite, without requiring any prior purification or pretreatment. This plasma electrolytic process of the present invention is quite promising and provided with advantages such as low cost, simple setup, high efficiency, and environmental friendliness.

Abstract: A graphite oxide or graphene preparation method includes providing a plasma electrolytic apparatus, where an electrolytic solution is provided and a graphite electrode is configured as a cathode of the plasma electrolytic apparatus; and providing a cathodic current so as to initiate a plasma electrolytic process at the graphite cathode to obtain graphite oxide or graphene. The graphite oxide can be synthesized through plasma electrolytic processing at relatively low temperature under atmospheric pressure within a very short period of time, without the need for concentrated acids or strong oxidizing agents. The present invention may prepare graphite oxide with plasma electrolytic process directly from graphite, without requiring any prior purification. This plasma electrolytic process of the present invention is quite promising and provided with advantages such as low cost, simple setup, high efficiency, and environmental friendliness.

Abstract: A method for measuring an optoelectronic memory device, includes: grounding a source electrode of the optoelectronic memory device; applying a drain electrode voltage to a drain electrode of the optoelectronic memory device and measuring a first current at the drain electrode; using an optical source to illuminate the optoelectronic memory device and measure a first and a second current at the drain electrode; and comparing the sizes of the first current and the second current so as to judge the functional parameters of the optoelectronic memory device.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides PHPIT and fabrication thereof. PHPIT has a side-chain-tethered with hexylphenanthrenyl-imidazole polythiophene. The visible light absorption of the PHPIT/PCBM blend is enhanced by the presence of the electron-withdrawing hexylphenanthrenyl-imidazole. The PHPIT/PCBM blend experienced more-balanced electron and hole mobilities and solvability.

Abstract: A novel material of phenanthrenyl imidazole is applied to a solar cell. A phenanthrenyl-imidazole moiety is introduced to reduce a power band of a polymer, so that a photocurrent and an optoelectrical transformation efficiency are improved. Thus, a polymer having the novel material is very suitable to be used in a solar cell to acquire a high optoelectrical transformation efficiency.

Abstract: A novel material of phenanthrenyl imidazole is applied to a solar cell. A phenanthrenyl-imidazole moiety is introduced to reduce a power band of a polymer, so that a photocurrent and an optoelectrical transformation efficiency are improved. Thus, a polymer having the novel material is very suitable to be used in a solar cell to acquire a high optoelectrical transformation efficiency.

Abstract: A three-dimensional ITO electrode and the method of fabricating the same are disclosed. The three-dimensional ITO electrode of the present invention has a conductive layer and a plurality of ITO nanorods formed on the conductive layer, wherein the length range of the ITO nanorods can vary from 10 nm to 1500 nm. The best length is about 50 nm-200 nm for organic solar cells. When applied into organic optoelectronic devices such as organic solar cells and organic light-emitting diodes (OLEDs), the three-dimensional structure of the ITO electrode may increase the contact area to the active layer, thus improving the electric current collecting efficiency and uniformity of current spreading (flowing). Also, an evaporator, a solar cell comprising the above three-dimensional ITO electrode, and the method of fabricating the solar cell are disclosed.

Abstract: The present invention provides a light-emitting diode made of a polymer nanocomposite doped with quantum dots to improve luminescence efficiency and to increase stability and electrical characteristics.

Abstract: The present invention provides PHPIT and fabrication thereof. PHPIT has a side-chain-tethered with hexylphenanthrenyl-imidazole polythiophene. The visible light absorption of the PHPIT/PCBM blend is enhanced by the presence of the electron-withdrawing hexylphenanthrenyl-imidazole. The PHPIT/PCBM blend experienced more-balanced electron and hole mobilities and solvability.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: One type of electroluminescence polymer that include at least one side-chain-tethered polyhedral oligomeric silsesquioxane that will form self-assembled structure and may build a free volume among the polymers to prevent the polymers from stacking and enhance luminescence efficiency and thermal stability.

Abstract: A novel material of phenanthrenyl imidazole is applied to a solar cell. A phenanthrenyl-imidazole moiety is introduced to reduce a power band of a polymer, so that a photocurrent and an optoelectrical transformation efficiency are improved. Thus, a polymer having the novel material is very suitable to be used in a solar cell to acquire a high optoelectrical transformation efficiency.

Abstract: The present invention provides a light-emitting diode made of a polymer nanocomposite doped with quantum dots to improve luminescence efficiency and to increase stability and electrical characteristics.