Patents by Inventor Kungen TEII

Kungen TEII has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9051644
    Abstract: A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: June 9, 2015
    Assignees: Fuji Electric Co., Ltd., Kyushu University, National University Corporation
    Inventors: Tomonori Katano, Katsumi Taniguchi, Kungen Teii
  • Patent number: 8691348
    Abstract: A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: April 8, 2014
    Assignees: Fuji Electric Co., Ltd., Kyushu University, National University Corporation
    Inventors: Tomonori Katano, Katsumi Taniguchi, Kungen Teii
  • Publication number: 20120107524
    Abstract: A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.
    Type: Application
    Filed: September 23, 2011
    Publication date: May 3, 2012
    Applicants: Kyushu University, National University Corporation, Fuji Electric Co., Ltd.
    Inventors: Tomonori KATANO, Katsumi TANIGUCHI, Kungen TEII