Abstract: Disclosed is a vertical structure transistor element including a spacer layer made of an insulating material and a thickness-dependent material layer made of a thickness-dependent material that is a material having electrical conductivity changed according to a thickness and stacked on an upper end surface of the spacer layer, wherein the thickness-dependent material layer includes a first electrode area layer stacked on a first upper end surface, a second electrode area layer stacked on a second upper end surface, and a channel area layer stacked on a third upper end surface, and a thickness of the channel area layer is smaller than a thickness of the first electrode area layer and a thickness of the second electrode area layer.

Abstract: Disclosed is a method for manufacturing an oxide thin film transistor including forming a gate electrode on a substrate, forming an oxide semiconductor thin film provided on the substrate to be insulated from the gate electrode by using a first mask, forming an electrode on the oxide semiconductor thin film by using the first mask, applying an oxidizer in one area of the electrode, and annealing the electrode, on which the oxidizer is applied.

Abstract: The present disclosure relates to a 2T0C-based memory cell. The 2T0C-based memory cell includes a first transistor and a second transistor connected through a storage node, a first word line connected to the first transistor and controlling an on/off state of the first transistor through an operation of applying a voltage, a second word line connected to the second transistor and controlling an on/off state of the second transistor such that data stored in the memory cell are read, and a single bit line connected to the first transistor and the second transistor and allowing the storage node to be charged or discharged depending on a voltage applied to the single bit line.

Abstract: Disclosed is a method for manufacturing an oxide thin film transistor including forming a gate electrode on a substrate, forming an oxide semiconductor thin film provided on the substrate to be insulated from the gate electrode by using a first mask, forming an electrode on the oxide semiconductor thin film by using the first mask, applying an oxidizer in one area of the electrode, and annealing the electrode, on which the oxidizer is applied.