Abstract: A charge transfer path of a transfer transistor constituted by a vertical transistor is reduced. An imaging element includes a photoelectric conversion unit, a charge holding unit, a charge transfer unit, and an image signal generation unit. The photoelectric conversion unit is disposed on a semiconductor substrate and generates charge corresponding to incident light by photoelectric conversion. The charge holding unit holds the charge. The charge transfer unit includes an opening portion, which is formed in the semiconductor substrate and having a polygonal shape in a plan view, and an embedded gate disposed in the opening portion and transfers the charge from the photoelectric conversion unit to the charge holding unit. The image signal generation unit generates an image signal based on the held charge.

Abstract: According to embodiments, a semiconductor device is provided. The semiconductor device includes an insulation layer, an electrode, and a groove. The insulation layer is provided on a surface of a substrate. The electrode is buried in the insulation layer, and a first end surface of the electrode is exposed from the insulation layer. The groove is formed around the electrode on the surface of the substrate. The groove has an outside surface of the electrode as one side surface, and the groove is opened on the surface side of the insulation layer. The first end surface of the electrode buried in the insulation layer protrudes from the surface of the insulation layer.

Abstract: According to embodiments, a semiconductor device is provided. The semiconductor device includes an insulation layer, an electrode, and a groove. The insulation layer is provided on a surface of a substrate. The electrode is buried in the insulation layer, and a first end surface of the electrode is exposed from the insulation layer. The groove is formed around the electrode on the surface of the substrate. The groove has an outside surface of the electrode as one side surface, and the groove is opened on the surface side of the insulation layer. The first end surface of the electrode buried in the insulation layer protrudes from the surface of the insulation layer.

Abstract: A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

Abstract: A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

Abstract: A SW (70) receives an Ethernet® signal from an outside of areas E and F. The SW (70) selects and outputs the obtained Ethernet® signal to any one of APs (91a to 91e) in accordance with a network structure managed by the SW (70). The AP (91a to 91e) converts the Ethernet® signal to an electrical signal type wireless LAN signal, which is in turn output to a main station (10). The main station (10) frequency-multiplexes the signal output from each of the APs (91a to 91e), and converts the signal to an optical signal, which is in turn output to sub-stations (20a and 20b). The sub-station (20a and 20b) transmits the signal transmitted from the main station (10) to a terminal in the form of a wireless radio wave. Thereby, when a plurality of communication areas are present, the accommodation capacity of an AP can be effectively utilized in each communication area.

Abstract: A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

Abstract: A wireless communication system capable of keeping a level of a wireless signal received by a relay apparatus within a predetermined dynamic range. In a control apparatus, a transmitting section converts a downstream electric signal into a downstream optical signal and transmits the downstream optical signal to the relay apparatus via an optical transmission path. The relay apparatus converts the received downstream optical signal into a downstream electric signal and transmits the downstream electric signal as a wireless signal to a wireless communication terminal from a transmitting/receiving antenna section. In the relay apparatus, a level adjustment section adjusts the level of the wireless signal transmitted by the relay apparatus such that the receiving level of the wireless signal received by the relay apparatus is kept within a predetermined range.

Abstract: An optical fiber radio transmission system is provided which is capable of considerably improving the received dynamic range of radio signals and, in addition, is capable of optically transmitting radio signals while preventing the deterioration of transmission performance and the loss of linearity of an input signal more easily. A received level detection section 111 detects which one of predetermined levels, i.e., Level I, Level II, and Level III, the received level of a radio signal received by an antenna 400 falls under. A signal control section 112 performs an amplification/attenuation process on the radio signal in accordance with the detected level. A control information sending section 113 superimposes control information indicating the detected level on a primary signal obtained after the amplification/attenuation process. This signal is converted to an optical signal and transmitted.

Abstract: This invention discloses an optical burst transmission system in which an optical generator generates Type 1 lightwaves having different wavelengths corresponding to transmission lines and having undergone intensity modulation with obtained data; a broad spectrum optical generator generates, by incorporating Type 2 lightwaves, a Type 3 lightwave using a fewer light emitting devices than the number of the Type 1 lightwaves, each Type 2 lightwaves having a corresponding wavelength apart from Type 1 lightwave's wavelength with an FSR interval and having undergone the intensity modulation with clock signals; an optical multiplexer multiplexes the Type 1 and Type 3 lightwaves to output the combination to each transmission line; and an optical routing unit extracts, from the combination, pairs of one Type 1 lightwave and one Type 2 lightwave having the corresponding wavelength, and guides pairs to each transmission line corresponding to the Type 1 lightwave's wavelength in each pair.

Abstract: A SW (70) receives an Ethernet® signal from an outside of areas E and F. The SW (70) selects and outputs the obtained Ethernet® signal to any one of APs (91a to 91e) in accordance with a network structure managed by the SW (70). The AP (91a to 91e) converts the Ethernet® signal to an electrical signal type wireless LAN signal, which is in turn output to a main station (10). The main station (10) frequency-multiplexes the signal output from each of the APs (91a to 91e), and converts the signal to an optical signal, which is in turn output to sub-stations (20a and 20b) The sub-station (20a and 20b) transmits the signal transmitted from the main station (10) to a terminal in the form of a wireless radio wave. Thereby, when a plurality of communication areas are present, the accommodation capacity of an AP can be effectively utilized in each communication area.

Abstract: The present invention is directed to a wireless communication system capable of keeping a level of a wireless signal received by a relay apparatus (20) within a predetermined dynamic range. In a control apparatus (10), a transmitting section (102) converts a downstream electric signal into a downstream optical signal and transmits the downstream optical signal to the relay apparatus (20) via an optical transmission path (40). The relay apparatus (20) converts the received downstream optical signal into a downstream electric signal and transmits the downstream electric signal as a wireless signal to a wireless communication terminal (30) from a transmitting/receiving antenna section (204). In the relay apparatus (20), a level adjustment section (207) adjusts the level of the wireless signal transmitted by the relay apparatus (20) such that the receiving level of the wireless signal received by the relay apparatus is kept within a predetermined range.

Abstract: A branch portion 101 branches an inputted electrical signal into an in-phase signal and an opposite phase signal which have an opposite relation as to a phase. A first FM laser 104 converts the in-phase signal into an optical frequency-modulated signal (a first optical signal) having a center wavelength ?1 and then outputs the resultant signal. A second FM laser 105 converts the opposite phase signal into an optical frequency-modulated signal (a second signal) having a center wavelength ?2 and then outputs the resultant signal. The two optical signals are combined and then inputted into an optical-electrical converting portion 106. The optical-electrical converting portion 106 subjects the inputted optical signals to optical heterodyne detection by its square-law detection characteristic, and outputs a beat signal between the two optical signals which is a wide-band FM signal at a frequency corresponding to a wavelength difference ??(=|?1??2|) between the first optical signal and the second optical signal.

Abstract: A branch portion 101 branches an inputted electrical signal into an in-phase signal and an opposite phase signal which have an opposite relation as to a phase. A first FM laser 104 converts the in-phase signal into an optical frequency-modulated signal (a first optical signal) having a center wavelength &Dgr;1 and then outputs the resultant signal. A second FM laser 105 converts the opposite phase signal into an optical frequency-modulated signal (a second signal) having a center wavelength &Dgr;2 and then outputs the resultant signal. The two optical signals are combined and then inputted into an optical-electrical converting portion 106.

Abstract: A branch portion 101 branches an inputted electrical signal into an in-phase signal and an opposite phase signal which have an opposite relation as to a phase. A first FM laser 104 converts the in-phase signal into an optical frequency-modulated signal (a first optical signal) having a center wavelength &lgr;1 and then outputs the resultant signal. A second FM laser 105 converts the opposite phase signal into an optical frequency-modulated signal (a second signal) having a center wavelength &lgr;2 and then outputs the resultant signal. The two optical signals are combined and then inputted into an optical-electrical converting portion 106.

Abstract: An object of the present invention is to provide a bi-directional optical transmission system wherein a single optical fiber is shared by upstream and downstream systems, thereby eliminating the need for providing an additional optical fiber and reducing the number of maintenance operations. A master station 400 for outputting a downstream optical signal is connected via an optical transmission path 200 to slave stations 500a-500c each for outputting an upstream optical signal. The optical transmission path 200 includes a single optical fiber connecting at one end to the master station 400, and optical branching units 202a, 202b branching the single optical fiber for connection to the slave stations. The master station 400 includes an optical passive unit 405 which supplies an upstream optical signal coming through the single optical fiber only to an optical-electrical converter 404 and supplies a downstream optical signal output from an electrical-optical converter 403 only to the single optical fiber.

Abstract: A branch portion 101 branches an inputted electrical signal into an in-phase signal and an opposite phase signal which have an opposite relation as to a phase. A first FM laser 104 converts the in-phase signal into an optical frequency-modulated signal (a first optical signal) having a center wavelength &lgr;1 and then outputs the resultant signal. A second FM laser 105 converts the opposite phase signal into an optical frequency-modulated signal (a second signal) having a center wavelength &lgr;2 and then outputs the resultant signal. The two optical signals are combined and then inputted into an optical-electrical converting portion 106.

Abstract: This invention discloses an optical burst transmission system in which an optical generator generates Type 1 lightwaves having different wavelengths corresponding to transmission lines and having undergone intensity modulation with obtained data; a broad spectrum optical generator generates, by incorporating Type 2 lightwaves, a Type 3 lightwave using a fewer light emitting devices than the number of the Type 1 lightwaves, each Type 2 lightwaves having a corresponding wavelength apart from Type 1 lightwave's wavelength with an FSR interval and having undergone the intensity modulation with clock signals; an optical multiplexer multiplexes the Type 1 and Type 3 lightwaves to output the combination to each transmission line; and an optical routing unit extracts, from the combination, pairs of one Type 1 lightwave and one Type 2 lightwave having the corresponding wavelength, and guides pairs to each transmission line corresponding to the Type 1 lightwave's wavelength in each pair.

Abstract: A modulated electrical signal Smod produced upon amplitude-modulating a subcarrier having a high frequency (for example, a millimeter-wave band) by a baseband signal SBB to be transmitted and a main carrier MC outputted from a light source 110 are inputted to an external optical modulating portion 120 in an optical transmitter 101. The external optical modulating portion 120 amplitude-modulates the main carrier MC by the modulated electrical signal Smod, to output a double-modulated optical signal OSdmod to an optical filter portion 130. The optical filter portion 130 passes only a component of one of sidebands included in the double-modulated optical signal OSdmod, and outputs the component to an optical fiber 140 as an optical signal OS. An optical/electrical converting portion 150 in an optical receiver 102 optical/electrical-converts the optical signal OS transmitted through the optical fiber 140, to directly obtain a baseband signal SBB.

Abstract: A branch portion 101 branches an inputted electrical signal into an in-phase signal and an opposite phase signal which have an opposite relation as to a phase. A first FM laser 104 converts the in-phase signal into an optical frequency-modulated signal (a first optical signal) having a center wavelength &lgr;1 and then outputs the resultant signal. A second FM laser 105 converts the opposite phase signal into an optical frequency-modulated signal (a second signal) having a center wavelength &lgr;2 and then outputs the resultant signal. The two optical signals are combined and then inputted into an optical-electrical converting portion 106.