Abstract: Disclosed is an oxide semiconductor layer (13) which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region (13d) is disposed on one section of the oxide semiconductor layer (13), whereby said region has a maximum In concentration 30 at %; or higher than other regions on the oxide semiconductor layer (13). The film thickness of the oxide semiconductor layer (13) is 100 nm max., and the film thickness of the high concentration region (13d) is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold slope of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.

Abstract: Disclosed is an oxide semiconductor layer (13) which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region (13d) is disposed on one section of the oxide semiconductor layer (13), whereby said region has a maximum In concentration 30 at %; or higher than other regions on the oxide semiconductor layer (13). The film thickness of the oxide semiconductor layer (13) is 100 nm max., and the film thickness of the high concentration region (13d) is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold slope of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.

Abstract: Features are forming a gate electrode on an insulating substrate; forming a first semiconducting layer mainly composed of an indium oxide and having a film thickness of 5 nm or more onto the gate electrode interposing a gate insulating film; forming a second semiconducting layer mainly composed of zinc and tin oxides without containing indium and having a film thickness of 5 to 50 nm on the first semiconducting layer, and including a step of forming a source electrode and a drain electrode on the second semiconducting layer. In this manner, by combining the materials of the first semiconducting layer and the second semiconducting layer with each other, a semiconductor device with a reduced dependency on the film thickness of the semiconducting layer, little characteristic variations on a large area substrate is provided.

Abstract: A working machine equipped with a boom, an arm and a bucket and is mounted on a construction vehicle, the working machine being capable of being folded compactly at rest. The working machine is easily brought into an operating position without any special apparatus. The boom is divided into two portions that allow it to be folded compactly. The two boom portions are pivotally attached to each other and the first of the two boom portions is pivotally attached to the chassis of the machine. The boom portions work in cooperation with at least one hydraulic cylinder to move between operative and inoperative positions. A retaining device, which can be in the form of another hydraulic cylinder or pins, is used to hold the boom portions in position with respect to each other.