Abstract: Exemplary embodiments of the invention provide a method for producing a low-resistivity silicon single crystal in which a silicon wafer having a crystal axis orientation [110] can be obtained and dislocations are sufficiently eliminated, and a method for producing a low-resistance silicon wafer having the crystal axis orientation [110] from the silicon single crystal obtained by the low-resistivity silicon single crystal production method. In the silicon single crystal production method of the invention which employs a Czochralski method, the silicon single crystal whose center axis is inclined by 0.6° to 100 relative to a-crystal axis [110] is grown by dipping a silicon seed crystal in a silicon melt. Boron as a dopant is added in the silicon melt so that a boron concentration ranges from 6.25×1017 to 2.5×1020 atoms/cm3, a center axis of the silicon seed crystal is inclined by 0.

Abstract: An aspect of the invention provides a silicon single crystal production method in which a dislocation-free feature can easily be achieved to enhance crystal quality irrespective of a crystal orientation. In the silicon single crystal production method of the invention, by a Czochralski method, in dipping the seed crystal in the melt, a melt temperature is set to an optimum temperature at which the seed crystal is brought into contact with a melt surface, the melt temperature is lowered, the seed crystal is pulled up while a pulling rate of the seed crystal is increased, and the pulling rate is kept at a constant rate to form the neck portion at the time that a pulling diameter reaches a target neck diameter. The invention is suitable to the case in which a silicon single crystal having a crystal orientation <110> is pulled up using the seed crystal having the crystal orientation <110>.

Abstract: The production efficiency of silicon single crystal produced by additional charge or recharge method is improved by avoiding loss due to undissolved portion of poly-silicon rod supplied in the additional charge or recharge. A poly-silicon rod 20 as an additional charge is brought down in a silicon melt 11 in a crucible 10, while being directly supported by a seed crystal 40. The poly-silicon rod 20 is brought down to be totally supplied to the silicon melt 11, and then silicon single crystal 44 is pulled using the seed crystal 40.

Abstract: The production efficiency of silicon single crystal produced by additional charge or recharge method is improved by avoiding loss due to undissolved portion of poly-silicon rod supplied in the additional charge or recharge. A poly-silicon rod 20 as an additional charge is brought down in a silicon melt 11 in a crucible 10, while being directly supported by a seed crystal 40. The poly-silicon rod 20 is brought down to be totally supplied to the silicon melt 11, and then silicon single crystal 44 is pulled using the seed crystal 40.

Abstract: A method of loading a crucible, comprises loading at least one polycrystalline silicon rod into the crucible. Lump and/or granular polycrystalline silicon may also be loaded into the crucible. Especially when loaded into the crucible in a close-packed pyramidal configuration, a high loading density is achieved.