Abstract: A defect inspecting method includes: forming, in a first air pressure state, a film, which covers one opening of two openings provided on an upper surface of a substrate, on a tubular contact hole formed on the substrate in manufacturing a semiconductor device and formed in a tubular shape by connecting two cylindrical contact holes on bottom surface sides thereof, both ends of the tubular shape being opened in the openings; exposing the substrate covered with the film in a second air pressure state; and observing whether the film is deformed to thereby inspect whether the part of the tubular shape is blocked.

Abstract: A defect inspecting method includes: forming, in a first air pressure state, a film, which covers one opening of two openings provided on an upper surface of a substrate, on a tubular contact hole formed on the substrate in manufacturing a semiconductor device and formed in a tubular shape by connecting two cylindrical contact holes on bottom surface sides thereof, both ends of the tubular shape being opened in the openings; exposing the substrate covered with the film in a second air pressure state; and observing whether the film is deformed to thereby inspect whether the part of the tubular shape is blocked.

Abstract: Indium is applied to a sealing surface by moving an application head along a tubular sealing surface between a rear side substrate and a front side substrate of an FED. In this time, the phase of an aperture of the application head is changed by rotating the aperture, and the width is changed to apply indium. The width controlled to apply indium, so that the width of indium applied at a corner of the sealing surface becomes narrower than that at the center of a side.