Patents by Inventor Kunihide Tachibana

Kunihide Tachibana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fluorocarbon film and method for forming same
    Patent number: 7648922
    Abstract: The major objective is to provide a fluorocarbon film wherein fine voids are formed by a step (SA1) for introducing a mixed gas containing a first carbon fluoride gas and a second carbon fluoride gas on a substrate placed inside a chamber, and depositing a fluorocarbon film on the substrate; and a step (SA2) for forming voids in the fluorocarbon film by selectively removing volatile components contained in the fluorocarbon film are included and especially in the step (SA2) for forming voids, it is preferable to include a step for cleaning the fluorocarbon film with a supercritical fluid.
    Type: Grant
    Filed: November 9, 2004
    Date of Patent: January 19, 2010
    Assignees: Kyoto University, Zeon Corporation
    Inventors: Tatsuru Shirafuji, Kunihide Tachibana
  • THIN FILM FORMED FROM POLYCYCLIC ALICYCLIC COMPOUND AS PRECUSER AND PRODUCTION METHOD THEREOF
    Publication number: 20080207862
    Abstract: A thin film formed from at least one polycyclic alicyclic compound selected from among compounds of the following formulas (1), (2) and (3) as a precursor.
    Type: Application
    Filed: February 21, 2008
    Publication date: August 28, 2008
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Hirotoshi Ishii, Tatsuru Shirafuji, Shizuo Fujita, Kunihide Tachibana
  • Method and apparatus for plasma processing
    Publication number: 20070037408
    Abstract: A plasma processing method using an apparatus including an electrode unit configured by providing a dielectric layer on a surface of a metal substrate having a surface defining a plurality of through holes and by superimposing a plurality of the metal substrates so that the through holes coincide, the method comprising: a gas supply step of supplying a predetermined gas at a pressure near an atmospheric pressure into the through holes; a voltage application step of applying a voltage between the metal substrates to transform the gas within the through holes into a plasma; and a processing step of processing a target member arranged near the electrode unit to face the electrode unit.
    Type: Application
    Filed: August 10, 2005
    Publication date: February 15, 2007
    Applicant: HITACHI METALS, LTD.
    Inventors: Kunihide Tachibana, Ryouji Inoue
  • Fluorocarbon film and method for forming same
    Publication number: 20070020951
    Abstract: The major objective is to provide a fluorocarbon film wherein fine voids are formed by a step (SA1) for introducing a mixed gas containing a first carbon fluoride gas and a second carbon fluoride gas on a substrate placed inside a chamber, and depositing a fluorocarbon film on the substrate; and a step (SA2) for forming voids in the fluorocarbon film by selectively removing volatile components contained in the fluorocarbon film are included and especially in the step (SA2) for forming voids, it is preferable to include a step for cleaning the fluorocarbon film with a supercritical fluid.
    Type: Application
    Filed: November 9, 2004
    Publication date: January 25, 2007
    Inventors: Tatsuru Shirafuji, Kunihide Tachibana