Patents by Inventor Kunihiko Kanazawa
Kunihiko Kanazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7706835Abstract: A high-frequency circuit device is provided that achieves cost reduction and reduction in power consumption and does not require an additional high-frequency amplifier even when a transmission frequency band is newly added.Type: GrantFiled: May 16, 2008Date of Patent: April 27, 2010Assignee: Panasonic CorporationInventor: Kunihiko Kanazawa
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Publication number: 20080233899Abstract: A high-frequency circuit device is provided that achieves cost reduction and reduction in power consumption and does not require an additional high-frequency amplifier even when a transmission frequency band is newly added.Type: ApplicationFiled: May 16, 2008Publication date: September 25, 2008Applicant: Matsushita Electric Industrial Co., Ltd.Inventor: Kunihiko Kanazawa
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Patent number: 7269156Abstract: A high-frequency circuit device is provided that is conformable to both of the TDMA system and the CDMA system as well as a plurality of frequency bands and achieves low cost and low power consumption. The high-frequency circuit device has a configuration including a transmission amplifier circuit for transmitting high-frequency power from an antenna that is composed of a high-frequency amplifier that is shared in the TDMA system and the CDMA system, a duplexer that is provided for performing simultaneous transmission/reception according to the CDMA system, upstream and downstream switch circuits in the direction of transmission that are provided so as to sandwich the duplexer between the transmission amplifier circuit and the antenna and are switched on when the simultaneous transmission/reception is performed according to the CDMA system, and a bypass switch circuit that bypasses the upstream and downstream switch circuits and the duplexer.Type: GrantFiled: February 11, 2005Date of Patent: September 11, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Kunihiko Kanazawa
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Patent number: 7125744Abstract: In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.Type: GrantFiled: October 6, 2004Date of Patent: October 24, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideki Takehara, Noriyuki Yoshikawa, Kunihiko Kanazawa
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Publication number: 20060194551Abstract: The power amplifier of the present invention is a power amplifier used in a communication device which communicates in a plurality of transmission modes of different power levels while switching the power level from mode to mode, and includes: an input terminal to which a signal is inputted; a first amplification unit for amplifying the signal inputted to the input terminal to a signal of a first power level; and a second amplification unit for amplifying the signal inputted to the input terminal to a signal of a second power level which is different from the first power level, wherein when one of the first amplification unit and the second amplification unit is turned on, the other is turned off.Type: ApplicationFiled: February 23, 2006Publication date: August 31, 2006Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Yuji Sato, Kunihiko Kanazawa, Kazuki Tateoka, Shingo Matsuda
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Patent number: 7081661Abstract: In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.Type: GrantFiled: March 13, 2002Date of Patent: July 25, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideki Takehara, Noriyuki Yoshikawa, Kunihiko Kanazawa
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Publication number: 20050201350Abstract: A high-frequency circuit device is provided that is conformable to both of the TDMA system and the CDMA system as well as a plurality of frequency bands and achieves low cost and low power consumption. The high-frequency circuit device has a configuration including a transmission amplifier circuit for transmitting high-frequency power from an antenna that is composed of a high-frequency amplifier that is shared in the TDMA system and the CDMA system, a duplexer that is provided for performing simultaneous transmission/reception according to the CDMA system, upstream and downstream switch circuits in the direction of transmission that are provided so as to sandwich the duplexer between the transmission amplifier circuit and the antenna and are switched on when the simultaneous transmission/reception is performed according to the CDMA system, and a bypass switch circuit that bypasses the upstream and downstream switch circuits and the duplexer.Type: ApplicationFiled: February 11, 2005Publication date: September 15, 2005Applicant: Matsushita Electric Industial Co., Ltd.Inventor: Kunihiko Kanazawa
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Publication number: 20050191973Abstract: A high-frequency circuit device is provided that achieves cost reduction and reduction in power consumption and does not require an additional high-frequency amplifier even when a transmission frequency band is newly added.Type: ApplicationFiled: February 15, 2005Publication date: September 1, 2005Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventor: Kunihiko Kanazawa
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Publication number: 20050056925Abstract: In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.Type: ApplicationFiled: October 6, 2004Publication date: March 17, 2005Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Hideki Takehara, Noriyuki Yoshikawa, Kunihiko Kanazawa
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Publication number: 20050040522Abstract: A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.Type: ApplicationFiled: October 7, 2004Publication date: February 24, 2005Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Hideki Takehara, Noriyuki Yoshikawa, Kunihiko Kanazawa, Seiichi Nakatani
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Patent number: 6818979Abstract: A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.Type: GrantFiled: August 4, 2003Date of Patent: November 16, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideki Takehara, Noriyuki Yoshikawa, Kunihiko Kanazawa, Seiichi Nakatani
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Patent number: 6815810Abstract: A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.Type: GrantFiled: October 15, 2002Date of Patent: November 9, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideki Takehara, Noriyuki Yoshikawa, Kunihiko Kanazawa, Seiichi Nakatani
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Patent number: 6794747Abstract: The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate having circuit patterns on opposed surfaces. The high thermo conductive ceramic substrate has on one surface a first circuit board of at least one layer having a first cavity structure, and on the other surface a second circuit board of at least one layer having a second cavity structure. A first active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode is integrated with the surface of the second circuit board, and the first circuit board surface is equipped with a cap or sealed with resin.Type: GrantFiled: August 26, 2003Date of Patent: September 21, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideki Takehara, Kunihiko Kanazawa, Noriyuki Yoshikawa
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Patent number: 6787398Abstract: The present invention provides a high-frequency signal amplification device, in which insufficient isolation is compensated and which is made smaller, as well as a method for manufacturing the same. A substrate, in which a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate are exposed at a first region of the surface, and a metal surface that is arranged at a position lower than the plurality of metal conductors is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged, is used as a dielectric multilayer substrate. The semiconductor element is mounted in the first region such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.Type: GrantFiled: December 3, 2002Date of Patent: September 7, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kazuki Tateoka, Noriyuki Yoshikawa, Kunihiko Kanazawa
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Publication number: 20040041256Abstract: The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate having circuit patterns on opposed surfaces. The high thermo conductive ceramic substrate has on one surface a first circuit board of at least one layer having a first cavity structure, and on the other surface a second circuit board of at least one layer having a second cavity structure. A first active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode is integrated with the surface of the second circuit board, and the first circuit board surface is equipped with a cap or sealed with resin.Type: ApplicationFiled: August 26, 2003Publication date: March 4, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Hideki Takehara, Kunihiko Kanazawa, Noriyuki Yoshikawa
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Publication number: 20040026780Abstract: A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.Type: ApplicationFiled: August 4, 2003Publication date: February 12, 2004Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Hideki Takehara, Noriyuki Yoshikawa, Kunihiko Kanazawa, Seiichi Nakatani
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Publication number: 20030116844Abstract: The present invention provides a high-frequency signal amplification device, in which insufficient isolation is compensated and which is made smaller, as well as a method for manufacturing the same. A substrate, in which a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate are exposed at a first region of the surface, and a metal surface that is arranged at a position lower than the plurality of metal conductors is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged, is used as a dielectric multilayer substrate. The semiconductor element is mounted in the first region such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.Type: ApplicationFiled: December 3, 2002Publication date: June 26, 2003Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Kazuki Tateoka, Noriyuki Yoshikawa, Kunihiko Kanazawa
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Publication number: 20030071350Abstract: A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.Type: ApplicationFiled: October 15, 2002Publication date: April 17, 2003Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Hideki Takehara, Noriyuki Yoshikawa, Kunihiko Kanazawa, Seiichi Nakatani
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Patent number: 6509641Abstract: The present invention provides a high-frequency signal amplification device, in which insufficient isolation is compensated and which is made smaller, as well as a method for manufacturing the same. A substrate, in which a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate are exposed at a first region of the surface, and a metal surface that is arranged at a position lower than the plurality of metal conductors is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged, is used as a dielectric multilayer substrate. The semiconductor element is mounted in the first region such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.Type: GrantFiled: May 23, 2001Date of Patent: January 21, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kazuki Tateoka, Noriyuki Yoshikawa, Kunihiko Kanazawa
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Publication number: 20020153582Abstract: In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.Type: ApplicationFiled: March 13, 2002Publication date: October 24, 2002Applicant: Matsushita Electric Industrial Co., LtdInventors: Hideki Takehara, Noriyuki Yoshikawa, Kunihiko Kanazawa