Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

Abstract: A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.

Abstract: Provided is a means for fixing calcium phosphate onto the surface of a metal by a treatment method which uses no acid and produces less residue. A method of producing a calcium phosphate composite in which calcium phosphate is bonded to the surface of a base material, the method including a surface treatment step of bringing the surface of the base material into contact with a surface treating agent, and then into contact with a silane coupling agent, to surface treat the base material; a polymerization step of initiating, after the surface treatment step, polymerization of the silane coupling agent by means of a polymerization initiator; and a bonding step of bonding the silane coupling agent at the surface of the base material after the polymerization step, with calcium phosphate; wherein the base material is a metal, and the surface treating agent is ozone water.

Abstract: Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF3 in a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, to coat the inner surfaces of at least the processing chamber (1) and the gas supply passage (2) with a fluoride film.

Abstract: The disclosed device and method produce high concentration ozonated water by connecting a high concentration ozone gas-supplying system that comprises an ozone gas-generating unit (1) for forming ozone gas, an ozone gas-concentrating unit (2) for concentrating the ozone gas formed, a concentrated ozone gas-pressurizing unit (3) for pressurizing the concentrated ozone gas output from the ozone gas-concentrating unit (2), and a cooling mechanism (13) for cooling the concentrated ozone gas-pressurizing unit (3), to an ozone gas-dissolving unit (4) to dissolve the high pressure, concentrated ozone gas in pure water and produce the high concentration ozonated water.

Abstract: Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF3 in a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, to coat the inner surfaces of at least the processing chamber (1) and the gas supply passage (2) with a fluoride film.

Abstract: A method of concentrating ozone gas including: causing ozone gas contained in ozone-oxygen mixture gas to be selectively adsorbed to adsorbents which are filled in a non-cooled state in at least two adsorbing cylinders arranged parallel to one another; desorbing the ozone gas from the adsorbents by subjecting a depressurizing process to each adsorbing cylinder during an ozone gas desorption operation; repeating an adsorption step and a desorption step alternately in the at least two adsorbing cylinders; and controlling the adsorbing cylinders, in such a way that one of the adsorbing cylinders is performing the adsorption step while another one of the adsorbing cylinders is performing the desorption step.

Abstract: A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.

Abstract: A processing method having excellent processing performance at a low flow rate is provided. A method for processing a surface of a sample uses reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber. The gas mixture contains a reactive gas chlorine trifluoride, a first inert gas argon, and a second inert gas xenon. The gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more. The reactive gas constitutes 3% by volume or more and 10% by volume or less. The first inert gas constitutes 40% by volume or more and 94% by volume or less. The second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture.

Abstract: A method of the present invention for producing a calcium phosphate complex including a substrate and calcium phosphate bonded to a surface of the substrate, the method includes the steps of: (a) treating the surface of the substrate; and (b) bonding the calcium phosphate onto the surface of the substrate after the step (a), the step (a) being the step of placing the surface of the substrate in contact with ozone water. Therefore, the method of the present invention makes it possible to bond calcium phosphate and the substrate at a high bonding strength and at a high coverage. In addition, the method of the present invention provides an easy method for producing a calcium phosphate complex.

Abstract: A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.

Abstract: The disclosed device and method produce high concentration ozonated water by connecting a high concentration ozone gas-supplying system that comprises an ozone gas-generating unit (1) for forming ozone gas, an ozone gas-concentrating unit (2) for concentrating the ozone gas formed, a concentrated ozone gas-pressurizing unit (3) for pressurizing the concentrated ozone gas output from the ozone gas-concentrating unit (2), and a cooling mechanism (13) for cooling the concentrated ozone gas-pressurizing unit (3), to an ozone gas-dissolving unit (4) to dissolve the high pressure, concentrated ozone gas in pure water and produce the high concentration ozonated water.

Abstract: A method of concentrating ozone gas in which, although the apparatus configuration is simple, ozone gas of a predetermined concentration can be efficiently taken out, and an apparatus therefor are provided. In a method of concentrating ozone gas in which an ozone-oxygen mixture gas is acted in an adsorbing column that is filled with an adsorbent, to cause the adsorbent to selectively adsorb the ozone gas, and the selectively adsorbed ozone gas is desorbed, thereby concentrating and purifying the ozone gas, the ozone-oxygen mixture gas is acted on the adsorbent in a non-cooled state to cause the ozone gas to be selectively adsorbed to the adsorbent, the adsorbing column is vacuumed when performing an operation desorbing of the ozone gas, thereby desorbing the ozone gas from the adsorbent, and an initial amount of the leading out of the desorbed ozone gas is not recovered, thereby obtaining high-concentration ozone gas.

Abstract: A method of concentrating ozone gas including: causing ozone gas contained in ozone-oxygen mixture gas to be selectively adsorbed to adsorbents which are filled in a non-cooled state in at least two adsorbing cylinders arranged parallel to one another; desorbing the ozone gas from the adsorbents by subjecting a depressurizing process to each adsorbing cylinder during an ozone gas desorption operation; repeating an adsorption step and a desorption step alternately in the at least two adsorbing cylinders; and controlling the adsorbing cylinders, in such a way that one of the adsorbing cylinders is performing the adsorption step while another one of the adsorbing cylinders is performing the desorption step.

Abstract: Provided is a means for fixing calcium phosphate onto the surface of a metal by a treatment method which uses no acid and produces less residue. A method of producing a calcium phosphate composite in which calcium phosphate is bonded to the surface of a base material, the method including a surface treatment step of bringing the surface of the base material into contact with a surface treating agent, and then into contact with a silane coupling agent, to surface treat the base material; a polymerization step of initiating, after the surface treatment step, polymerization of the silane coupling agent by means of a polymerization initiator; and a bonding step of bonding the silane coupling agent at the surface of the base material after the polymerization step, with calcium phosphate; wherein the base material is a metal, and the surface treating agent is ozone water.