Abstract: A semiconductor device includes a substrate, a semiconductor layer, an element region, and fin transistors. The substrate includes a principal surface. The semiconductor layer is formed as a surface layer or on the principal surface of the substrate, the surface layer being the principal surface of the substrate. The semiconductor layer has a crystal structure in which an angle between two of crystal orientations with equivalent relationships on a crystal plane having a correspondence with the principal surface of the substrate is 60 degrees or 120 degrees. The element region includes unit element regions formed on the principal surface of the substrate. The fin transistors are formed in the semiconductor layer, in the respective unit element regions. The fin transistors radially extend from a center toward an outer periphery of the element region. Adjacent two of the fin transistors have a spacing with a 60° angle or a 120° angle.

Abstract: A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.

Abstract: An infrared sensor according to the present disclosure includes a transistor, a cavity layer, and a sensor layer. The cavity layer includes a cavity. The sensor layer includes a phononic crystal in which holes are arranged. In plan view, the infrared sensor includes a first region and a second region. The first region includes a transistor. The second region includes the cavity. The cavity layer includes a flat major surface. The major surface is disposed around the cavity, and extends across both the first region and the second region. The sensor layer is disposed on the major surface.

Abstract: An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.

Abstract: A gas constituent measuring apparatus includes a cell that draws in a first gas to be measured, gas sensors that respond to one or more types of constituent gases in the cell, a regulator that controls humidity in the cell, a pump, a humidity sensor that detects the humidity in the cell, and an integrated circuit. The integrated circuit controls the regulator and pump on the basis of a detection result of the humidity sensor so that the humidity is within a predetermined range before the first gas is drawn into the cell or after the first gas is discharged from the cell, acquires first response values from the gas sensors with humidity being controlled, acquires second response values from the gas sensors with the first gas being in the cell, and determines concentrations of the one or more types of constituent gases from the first and second response values.

Abstract: An infrared sensor is provided with an infrared light receiver, a signal pathway, and a first member. The infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered. The signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver. The driving signal has a current value equal to or greater than a prescribed magnitude, and the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.

Abstract: A temperature sensor is a temperature sensor using a MEMS resonator, and includes: a MEMS resonator; a sweeper that sweeps a frequency of an excitation signal for a vibrator of the MEMS resonator in a predetermined sweep direction, and outputs the excitation signal swept to the MEMS resonator; a discontinuity point detector that obtains a vibration state information signal, which is a characteristic quantity expressing a vibration state of the vibrator based on the excitation signal, from the MEMS resonator, and detects a detection value that is (i) a frequency of the excitation signal when the vibration state information signal obtained changes discontinuously or (ii) a time corresponding to the frequency; and a converter that determines a physical quantity acting on the MEMS resonator based on the detection value detected.

Abstract: An analog-to-digital converter includes a primary converter and a secondary converter. The primary converter executes conversion processing to convert an analog input signal to a first digital signal through delta-sigma modulation. The secondary converter outputs a second digital signal by converting amplified analog output of a quantization error in the primary converter to the second digital signal.

Abstract: A thermoelectric conversion device includes: a first thermoelectric conversion module, a first insulating layer, and a second thermoelectric conversion module. The first (second) thermoelectric conversion module includes one or two or more thermoelectric conversion elements, a first (third) connection electrode, and a second (fourth) connection electrode. The thermoelectric conversion elements of the first (second) thermoelectric conversion module are electrically connected to the first (third) connection electrode and the second (fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes.

Abstract: A thermoelectric conversion device includes: an insulating layer; and a thermoelectric conversion module disposed on the insulating layer. The thermoelectric conversion module has a first thermoelectric conversion region and a second thermoelectric conversion region. The first(second) thermoelectric conversion region includes one or two or more thermoelectric conversion elements, a first(third) connection electrode, and a second(fourth) connection electrode. The thermoelectric conversion elements of the first(second) thermoelectric conversion region are electrically connected to the first(third) connection electrode and the second(fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter.

Abstract: A gas sensor includes a substrate, a support layer, a base layer, a heater layer disposed on or above the base layer, a gas sensing layer that is disposed on or above one of the heater layer and the base layer and that has a gas concentration dependent electrical impedance, and a detection electrode that is electrically connected to the gas sensing layer and that detects the impedance of the gas sensing layer. The substrate has a cavity and an opening formed by the cavity. The support layer is disposed on the substrate so as to cover at least an entire periphery of the opening. The base layer is supported by the support layer above the cavity so as to be separated from the substrate. A portion of the support layer in contact with the cavity has a first phononic crystal structure structured by a plurality of regularly arranged through-holes.

Abstract: A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.

Abstract: The present disclosure provides a novel multilayer body. The multilayer body of the present disclosure includes a first phononic crystal layer and a second phononic crystal layer disposed on or above the first phononic crystal layer. The first phononic crystal layer has a first phononic crystal structure including a plurality of regularly arranged first through holes. The second phononic crystal layer has a second phononic crystal structure including a plurality of regularly arranged second through holes. The through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to the through direction of the plurality of second through holes in the second phononic crystal layer.

Abstract: Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.

Abstract: An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.

Abstract: An A/D converter includes: a sampler that includes a sampling capacitor and samples an input signal; a D/A converter that selectively outputs an analog voltage; an integrator that integrates an input from the sampler and an input from the D/A converter; Multiple switches that include a first switch independently connecting the sampler to the integrator, a second switch independently connecting the D/A converter to the integrator, a third switch, and, a fourth switch, a quantizer that quantizes an output of the integrator; a control circuit that outputs a digital value based on an output of the quantizer, and a reference potential generation circuit that provides a second reference potential to an integrator side of the sampler through the third switch and provides a first reference potential to the integrator side of the D/A converter through the fourth switch.

Abstract: An A/D conversion device, which operates in one mode including at least one of a ?? mode, a cyclic mode, and a hybrid mode, includes: a first block that processes an analog input signal by a first amplifier; a second block including a second amplifier; a quantization unit that quantizes one of outputs of the first and second blocks; and a control circuit that switches the mode to perform a control corresponding to the mode.

Abstract: An A/D converter includes: a sampler that includes a sampling capacitor and samples an input signal; a D/A converter that selectively outputs an analog voltage; an integrator that integrates an input from the sampler and an input from the D/A converter; Multiple switches that include a first switch independently connecting the sampler to the integrator, a second switch independently connecting the D/A converter to the integrator, a third switch, and, a fourth switch, a quantizer that quantizes an output of the integrator; a control circuit that outputs a digital value based on an output of the quantizer, and a reference potential generation circuit that provides a second reference potential to an integrator side of the sampler through the third switch and provides a first reference potential to the integrator side of the D/A converter through the fourth switch.

Abstract: An A/D conversion device, which operates in one mode including at least one of a ?? mode, a cyclic mode, and a hybrid mode, includes: a first block that processes an analog input signal by a first amplifier; a second block including a second amplifier; a quantization unit that quantizes one of outputs of the first and second blocks; and a control circuit that switches the mode to perform a control corresponding to the mode.

Abstract: A toner including: a toner particle including a toner base particle containing a binder resin, and an organosilicon condensate present on a surface of the toner base particle, wherein a charge attenuation constant of the toner is 3.5×10?3 or more to 1.0×100 or less.