Abstract: A novel method for forming a positive electrode active material is provided. In the method for forming a positive electrode active material, a cobalt source and an additive element source are mixed to form an acidic solution; the acidic solution and an alkaline solution are made to react to form a cobalt compound; the cobalt compound and a lithium source are mixed to form a mixture; and the mixture is heated. The additive element source is a compound containing one or more selected from gallium, aluminum, boron, nickel, and indium.

Abstract: A secondary battery with little deterioration is provided. A highly reliable secondary battery is provided. A positive electrode active material included in the secondary battery includes a crystal of lithium cobalt oxide. The positive electrode active material includes a first region including a surface parallel to the (00l) plane of the crystal and a second region including a surface parallel to a plane intersecting with the (00l) plane. The positive electrode active material contains magnesium. The first region includes a portion with a magnesium concentration that is higher than or equal to 0.5 atomic % and lower than or equal to 10 atomic %. The second region includes a portion with a magnesium concentration that is higher than the magnesium concentration in the first region and is higher than or equal to 4 atomic % and lower than or equal to 30 atomic %.

Abstract: A semiconductor device with a small variation in transistor characteristics can be provided. A step of forming an opening in a structure body including an oxide semiconductor device to reach the oxide semiconductor device, a step of embedding a first conductor in the opening, a step of forming a second conductor in contact with a top surface of the first conductor, a step of forming a first barrier insulating film by a sputtering method to cover the structure body, the first conductor, and the second conductor, and a step of forming a second barrier insulating film over the first barrier insulating film by an ALD method are included. The first barrier insulating film and the second barrier insulating film each have a function of inhibiting hydrogen diffusion.

Abstract: A positive electrode active material in which a discharge capacity decrease due to charge and discharge cycles is suppressed and a secondary battery including the positive electrode active material are provided. A positive electrode active material in which a change in a crystal structure, e.g., a shift in CoO2 layers is small between a discharged state and a high-voltage charged state is provided. For example, a positive electrode active material that has a layered rock-salt crystal structure belonging to the space group R-3m in a discharged state and a crystal structure belonging to the space group P2/m in a charged state where x in LixCoO2 is greater than 0.1 and less than or equal to 0.24 is provided. When the positive electrode active material is analyzed by powder X-ray diffraction, a diffraction pattern has at least diffraction peaks at 2? of 19.47±0.10° and 2? of 45.62±0.05°.

Abstract: The present invention relates to a secondary battery and an electronic device. The secondary battery includes a positive electrode active material which exhibits a broad peak at around 4.55 V in a dQ/dVvsV curve obtained when the charge depth is increased. The secondary battery includes a positive electrode active material which, even when the charge voltage is greater than or equal to 4.6 V and less than or equal to 4.8 V and the charge depth is greater than or equal to 0.8 and less than 0.9, does not have the H1-3 type structure and can maintain a crystal structure where a shift in CoO2 layers is inhibited. The broad peak at around 4.55 V in the dQ/dVvsV curve indicates that a change in the energy necessary for extraction of lithium at around the voltage is small and a change in the crystal structure is small. Accordingly, the positive electrode active material hardly suffers a shift in CoO2 layers and a volume change and is relatively stable even when the charge depth is large.

Abstract: A semiconductor device with high reliability is provided by the following steps: forming an oxide semiconductor; forming a first insulator in contact with the oxide semiconductor; forming a second insulator over the first insulator, forming a third insulator over the second insulator; forming an opening in the third insulator, the second insulator, and the first insulator, cleaning the inside of the opening; embedding a conductor in the cleaned opening; forming the first insulator to include an excess-oxygen region; forming the second insulator to have a higher barrier property against oxygen, hydrogen, or water than the first insulator, and processing the opening to have a cylindrical shape or an inverted cone shape.

Abstract: A vibrating device that can be applied to various purposes other than as a vibrator and that can achieve cost reduction, size reduction, and space saving by a reduction in the number of components, and a mobile phone using this vibrating device are provided. The vibrating device has a housing supported by a base and capable of oscillating in a vibration frequency range of a vibrator, and an expandable rod that can expand and contract, one end of which is fixed to the housing, and the other end of which is a free end contacting the base. The base is resonated by oscillation of the housing in the vibration frequency range of a vibrator, while the base is vibrated by expansion and contraction of the expandable rod in a sound frequency range other than the vibration frequency range of a vibrator.

Abstract: There are disclosed a processing apparatus for a photosensitive material having a coating device of a processing liquid to a photosensitive material, which comprises using a slot die having a manifold and a slot at the inside of the die as a coating device, and a processing apparatus for a photosensitive material which comprises a photosensitive material transferring device, a photosensitive material detecting device, a slot die for coating a processing liquid to the photosensitive material and having a manifold and a slot at the inside of the die, and a device for supplying a predetermined amount of the processing liquid to the slot die, wherein a detection result at the detecting device of the photosensitive material is fed back to the supplying device of the processing liquid to control operation of the processing liquid supplying device.

Abstract: There are disclosed a processing apparatus for a photosensitive material having a coating device of a processing liquid to a photosensitive material, which comprises using a slot die having a manifold and a slot at the inside of the die as a coating device, and a processing apparatus for a photosensitive material which comprises a photosensitive material transferring device, a photosensitive material detecting device, a slot die for coating a processing liquid to the photosensitive material and having a manifold and a slot at the inside of the die, and a device for supplying a predetermined amount of the processing liquid to the slot die, wherein a detection result at the detecting device of the photosensitive material is fed back to the supplying device of the processing liquid to control operation of the processing liquid supplying device.